Suppression of Side‐Etching in  C 2 H 6 /  H 2 /  O 2 Reactive Ion Etching for the Fabrication of an InGaAsP / InP P‐Substrate Buried‐Heterostructure Laser Diode

1993 ◽  
Vol 140 (12) ◽  
pp. 3615-3620 ◽  
Author(s):  
Hiroshi Sugimoto ◽  
Toshiro Isu ◽  
Hitoshi Tada ◽  
Takeshi Miura ◽  
Tetsuo Shiba ◽  
...  
Keyword(s):  
Laser Diode ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Heterostructure Laser ◽  
Buried Heterostructure

1.5 μm GaInAsP/InP buried‐heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogen

1990 ◽  
Vol 56 (17) ◽  
pp. 1641-1642 ◽  
Author(s):  
Teruhito Matsui ◽  
Ken‐ichi Ohtsuka ◽  
Hiroshi Sugimoto ◽  
Yuji Abe ◽  
Toshiyuki Ohishi
Keyword(s):  
Laser Diode ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Heterostructure Laser ◽  
Buried Heterostructure

Entirely aluminum free 905-nm wavelength buried heterostructure laser by reactive ion etching and semi-insulating GaInP:Fe regrowth

1997 ◽  
Vol 44 (2) ◽  
pp. 339-340 ◽  
Author(s):  
S. Lourdudoss ◽  
A. Ovtchinnikov ◽  
O. Kjebon ◽  
S. Nilsson ◽  
L. Backbom ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
Heterostructure Laser ◽  
Buried Heterostructure

Buried heterostructure laser fabricated using reactive ion etching and gas source molecular beam epitaxy

1992 ◽  
Vol 60 (10) ◽  
pp. 1211-1213 ◽  
Author(s):  
J.‐L. Liévin ◽  
L. Le Gouézigou ◽  
D. Bonnevie ◽  
F. Gaborit ◽  
F. Poingt ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Gas Source ◽  
Heterostructure Laser ◽  
Buried Heterostructure

Analysis of Reverse-Biased Electrostatic-Discharge-Induced Degradation of GaInAsP/InP Buried Heterostructure Laser Diode

2009 ◽  
Vol 48 (2) ◽  
pp. 022201 ◽  
Author(s):  
Hiroyuki Ichikawa ◽  
Akiko Kumagai ◽  
Kotaro Hamada ◽  
Akira Yamaguchi ◽  
Takashi Nakabayashi
Keyword(s):  
Laser Diode ◽  
Electrostatic Discharge ◽  
Heterostructure Laser ◽  
Buried Heterostructure
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