Digital SPV Diffusion Length Metrology (E8-Fe) for Ultra-High Purity Silicon Wafers

2019 ◽  
Vol 16 (6) ◽  
pp. 285-301 ◽  
Author(s):  
Marshall Wilson ◽  
Alexandre Savtchouk ◽  
Igor Tasarov ◽  
John D'Amico ◽  
Piotr Edelman ◽  
...  
Keyword(s):  
High Purity ◽  
Diffusion Length ◽  
Silicon Wafers ◽  
Ultra High Purity ◽  
High Purity Silicon

Characterization of Ultra High Purity Silicon Epitaxy Using Photoluminscence Spectroscopy

1986 ◽  
Vol 90 ◽  
Author(s):  
J. E. Huffman ◽  
M. L. W. Thewalt ◽  
A. G. Steele
Keyword(s):  
High Purity ◽  
Impurity Content ◽  
Substrate Material ◽  
Silicon Substrates ◽  
Epitaxial Silicon ◽  
Phonon Replica ◽  
Silicon Epitaxy ◽  
Ultra High Purity ◽  
High Purity Silicon

ABSTRACTHigh purity epitaxial silicon samples, grown on indium doped and on ultrahigh resistivity silicon substrates, were analyzed for impurity content using photoluminescence spectroscopy (PL) and spreading resistance analysis (SRA). Calibrated SRA indicated typical net carrier concentrations of < 3×1012cm-3 in the epitaxial layers, and about 7×1011 cm-3 in the substrates. Impurities were identified by collecting highly resolved, very clean no-phonon and TO-phonon replica PL spectra at liquid helium temperatures. Spectra were taken on the substrate material alone and on substrates with epitaxy. Ga, As, A1, B and P contamination was evident in the epitaxy. Correlation of SRA and PL results on samples with various levels of contamination at the epitaxy substrate interface identified Al as the main interfacial impurity.

The Interactions of Carbon and Nitrogen in Liquid Silicon

2014 ◽  
Vol 33 (4) ◽  
pp. 363-368 ◽  
Author(s):  
Halvor Dalaker ◽  
Merete Tangstad
Keyword(s):  
Silicon Nitride ◽  
Carbon Source ◽  
Nitrogen Content ◽  
High Purity ◽  
Liquid Silicon ◽  
Interaction Parameters ◽  
Carbon And Nitrogen ◽  
Temperature Range ◽  
High Purity Silicon

AbstractThe interactions between carbon and nitrogen in liquid silicon have been studied experimentally. High purity silicon was melted in silicon nitride crucibles under an Ar atmosphere with a graphite slab inserted in the crucible prior to melting as a carbon source. The system was thus simultaneously equilibrated with Si3N4 and SiC. Samples were extracted in the temperature range 1695–1798 K and analyzed using Leco.It was observed that the simultaneous saturation of nitrogen and carbon caused a significant increase in the solubilities of both elements. The interaction parameters were derived as The solubility of carbon in liquid silicon as a function of temperature and nitrogen content was found to follow: And the solubility of nitrogen in liquid silicon found to follow:

Clean Preparation of High-Purity Silicon from Rice Husk Ash by a Modified Metallurgical Method

JOM ◽  
2021 ◽  
Author(s):  
Jian Kong ◽  
Donghui Wei ◽  
Pengfei Xing ◽  
Yanxin Zhuang ◽  
Xing Jin ◽  
...  
Keyword(s):  
Rice Husk ◽  
High Purity ◽  
Rice Husk Ash ◽  
High Purity Silicon

Processing high-purity silicon used for sensor applications

1989 ◽  
Vol 16 (3) ◽  
pp. 287-298 ◽  
Author(s):  
W.R.Th. Ten Kate ◽  
S.A. Audet
Keyword(s):  
High Purity ◽  
Sensor Applications ◽  
High Purity Silicon
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