Characterization of Ultra High Purity Silicon Epitaxy Using Photoluminscence Spectroscopy

1986 ◽  
Vol 90 ◽  
Author(s):  
J. E. Huffman ◽  
M. L. W. Thewalt ◽  
A. G. Steele
Keyword(s):  
High Purity ◽  
Impurity Content ◽  
Substrate Material ◽  
Silicon Substrates ◽  
Epitaxial Silicon ◽  
Phonon Replica ◽  
Silicon Epitaxy ◽  
Ultra High Purity ◽  
High Purity Silicon

ABSTRACTHigh purity epitaxial silicon samples, grown on indium doped and on ultrahigh resistivity silicon substrates, were analyzed for impurity content using photoluminescence spectroscopy (PL) and spreading resistance analysis (SRA). Calibrated SRA indicated typical net carrier concentrations of < 3×1012cm-3 in the epitaxial layers, and about 7×1011 cm-3 in the substrates. Impurities were identified by collecting highly resolved, very clean no-phonon and TO-phonon replica PL spectra at liquid helium temperatures. Spectra were taken on the substrate material alone and on substrates with epitaxy. Ga, As, A1, B and P contamination was evident in the epitaxy. Correlation of SRA and PL results on samples with various levels of contamination at the epitaxy substrate interface identified Al as the main interfacial impurity.

Physical characterization of HfO2deposited on Ge substrates by MOCVD.

2004 ◽  
Vol 811 ◽  
Author(s):  
S. Van Elshocht ◽  
B. Brijs ◽  
M. Caymax ◽  
T. Conard ◽  
S. De Gendt ◽  
...  
Keyword(s):  
Physical Properties ◽  
Gate Dielectric ◽  
Substrate Material ◽  
Silicon Substrates ◽  
Enabling Technology ◽  
The Past ◽  
High K ◽  
Alternative Approach ◽  
Made In

ABSTRACTGermanium is because of its intrinsically higher mobility than Si, currently under consideration as an alternative approach to improve transistor performance. Germanium oxide, however, is thermodynamically unstable, preventing formation of the gate dielectric by simple oxidation. At present, high-k dielectrics might be considered as an enabling technology as much progress has been made in the deposition of thin high-quality layers.In this paper, we study the growth and physical properties of HfO2 deposited on Ge by MOCVD, using TDEAH and O2 as precursors, and compare the results to similar layers deposited on silicon substrates. Our results show that the physical properties of MOCVD-deposited HfO2 layers on Ge are very similar to what we have observed in the past for Si. Unfortunately, some of the negative aspects observed for Si, such as diffusion of substrate material in the high-k layer, a low density for thinner layers, or a rough top surface, are also observed for the case of Ge. However, careful surface pretreatments such as NH3 annealing the Ge substrate prior to deposition, can greatly improve the physical properties. An important observation is the very thin interfacial layer between HfO2 and Ge substrate, allowing a more aggressive scaling for Ge.

Microstructure and grain-boundary characterization of HIP'ed high-purity silicon nitride

1993 ◽  
Vol 28 (15) ◽  
pp. 4217-4222 ◽  
Author(s):  
P. Lu ◽  
S. C. Danforth ◽  
W. T. Symons
Keyword(s):  
Silicon Nitride ◽  
Grain Boundary ◽  
High Purity ◽  
High Purity Silicon

Physical characterization of HfO2 deposited on Ge substrates by MOCVD

2004 ◽  
Vol 809 ◽  
Author(s):  
S. Van Elshocht ◽  
B. Brijs ◽  
M. Caymax ◽  
T. Conard ◽  
S. De Gendt ◽  
...  
Keyword(s):  
Physical Properties ◽  
Gate Dielectric ◽  
Substrate Material ◽  
Silicon Substrates ◽  
Enabling Technology ◽  
The Past ◽  
High K ◽  
Alternative Approach ◽  
Made In

ABSTRACTGermanium is because of its intrinsically higher mobility than Si, currently under consideration as an alternative approach to improve transistor performance. Germanium oxide, however, is thermodynamically unstable, preventing formation of the gate dielectric by simple oxidation. At present, high-k dielectrics might be considered as an enabling technology as much progress has been made in the deposition of thin high-quality layers.In this paper, we study the growth and physical properties of HfO2 deposited on Ge by MOCVD, using TDEAH and O2 as precursors, and compare the results to similar layers deposited on silicon substrates. Our results show that the physical properties of MOCVDdeposited HfO2 layers on Ge are very similar to what we have observed in the past for Si. Unfortunately, some of the negative aspects observed for Si, such as diffusion of substrate material in the high-k layer, a low density for thinner layers, or a rough top surface, are also observed for the case of Ge. However, careful surface pretreatments such as NH3 annealing the Ge substrate prior to deposition, can greatly improve the physical properties. An important observation is the very thin interfacial layer between HfO2 and Ge substrate, allowing a more aggressive scaling for Ge.

Optical characterization of ultra-high-purity Zinc Selenide epilayers

1990 ◽  
Vol 101 (1-4) ◽  
pp. 763-766 ◽  
Author(s):  
Khalid Shahzad ◽  
Diego J. Olego ◽  
David A. Cammack
Keyword(s):  
Zinc Selenide ◽  
High Purity ◽  
Optical Characterization ◽  
Ultra High Purity

Photoluminescence Investigation of Dislocation-Related Defects in High Purity Silicon

1986 ◽  
Vol 82 ◽  
Author(s):  
A. T. Hunter ◽  
Kimberly L. Schumacher
Keyword(s):  
Thermal Stress ◽  
High Temperature ◽  
High Purity ◽  
Free Exciton ◽  
Small Temperature ◽  
Phonon Replica ◽  
Float Zone ◽  
Three Samples ◽  
High Purity Silicon ◽  
Luminescence Investigation

ABSTRACTWe conducted a luminescence investigation of the D1-D4 luminescence lines (0.8 to 1.0 eV) in three samples of high-purity, float-zone silicon. We conclude that the D3 line is a transverse-optical-phonon replica of the D4 line. In the samples studied, all of the defects were formed in the bulk of the crystals by high temperature thermal stress. The free-exciton lifetimes are short, varying between ∼20 nsec at a dislocation density of 1 × 106 cm−2 to ∼200 nsec at a density of 7 × 104 cm−2. The D4 decay shows a small temperature dependence, and varies between samples.

Strain-free, ultra-high purity ZnSe layers grown by molecular beam epitaxy

1990 ◽  
Vol 5 (3) ◽  
pp. 475-477 ◽  
Author(s):  
R. M. Park ◽  
C. M. Rouleau ◽  
M. B. Troffer ◽  
T. Koyama ◽  
T. Yodo
Keyword(s):  
Molecular Beam Epitaxy ◽  
High Purity ◽  
Molecular Beam ◽  
Biaxial Tension ◽  
Substrate Material ◽  
Ultra High Purity ◽  
Free Relative ◽  
Homoepitaxial Layers ◽  
Source Materials ◽  
Transport Method

ZnSe layers have been grown by molecular beam epitaxy on high-purity, high-quality ZnSe wafers [(100) oriented] cut from ingots grown by the iodine vapor transport method. Photoluminescence (PL) analysis indicates the homoepitaxial ZnSe material to be of ultra-high purity as well as being strain-free relative to ZnSe/(100) GaAs layers which exhibit in-plane biaxial tension. The 10 K PL spectra recorded from homoepitaxial layers exhibit unsplit free- and donor-bound exciton transitions of comparable intensity together with a strong peak at 2.7768 eV believed to be the so-called Iv transition in relaxed ZnSc. The ultra-high purity nature of the homoepitaxial layers is attributed to the high purity of the substrate material in addition to the use of high purity Zn and Se source materials in this work.

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