Interplay between Dry Etch and Wet Clean in Patterning La2O3/HfO2 Containing High-k/metal Gate Stacks

2019 ◽  
Vol 25 (5) ◽  
pp. 29-36
Author(s):  
Ingrid Vos ◽  
David Hellin ◽  
Christa Vrancken ◽  
Jef Geypen ◽  
Hugo Bender ◽  
...  
Keyword(s):  
Gate Stacks ◽  
Metal Gate ◽  
High K ◽  
Dry Etch

Selective Wet Removal of Hf-Based Layers and Post-Dry Etch Residues in High-k and Metal Gate Stacks

2005 ◽  
Vol 103-104 ◽  
pp. 93-96 ◽  
Author(s):  
Martine Claes ◽  
Vasile Paraschiv ◽  
S. Beckx ◽  
M. Demand ◽  
W. Deweerd ◽  
...  
Keyword(s):  
Gate Stacks ◽  
Metal Gate ◽  
High K ◽  
Dry Etch ◽  
Wet Removal

Selective Wet Removal of Hf-Based Layers and Post-Dry Etch Residues in High-k and Metal Gate Stacks

2005 ◽  
pp. 93-96
Author(s):  
M. Claes ◽  
Vasile Paraschiv ◽  
S. Beckx ◽  
M. Demand ◽  
W. Deweerd ◽  
...  
Keyword(s):  
Gate Stacks ◽  
Metal Gate ◽  
High K ◽  
Dry Etch ◽  
Wet Removal

Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress

2012 ◽  
Vol 52 (9-10) ◽  
pp. 1901-1904 ◽  
Author(s):  
Dongwoo Kim ◽  
Seonhaeng Lee ◽  
Cheolgyu Kim ◽  
Chiho Lee ◽  
Jeongsoo Park ◽  
...  
Keyword(s):  
Gate Stacks ◽  
Metal Gate ◽  
Hot Carrier ◽  
High K ◽  
Enhanced Degradation

Bottom-up method for work function tuning in high-k/metal gate stacks in advanced CMOS technologies

2011 ◽  
Author(s):  
Mrunal A. Khaderbad ◽  
Rohit Pandharipande ◽  
Aradhana Gautam ◽  
Abhishek Mishra ◽  
Meenakshi Bhaisare ◽  
...  
Keyword(s):  
Work Function ◽  
Gate Stacks ◽  
Metal Gate ◽  
Bottom Up ◽  
High K ◽  
Work Function Tuning

Mechanisms Limiting EOT Scaling and Gate Leakage Currents of High- $k$/Metal Gate Stacks Directly on SiGe

2009 ◽  
Vol 30 (3) ◽  
pp. 285-287 ◽  
Author(s):  
J. Huang ◽  
P.D. Kirsch ◽  
Jungwoo Oh ◽  
Se Hoon Lee ◽  
P. Majhi ◽  
...  
Keyword(s):  
Gate Leakage ◽  
Gate Stacks ◽  
Metal Gate ◽  
Leakage Currents ◽  
High K
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