Effect of the Dummy Gate on the Capacitance Characteristics of the LDMOSFETs

Since Tetramethylammonium Hydroxide (TMAH) became widely used as a silicon etchant, e.g. the dummy gate removal for gate-last approach (RMG) [1, or Si fin formation on FinFET [, some careful preparations and optimizations have required implementation. These adaptations have involved not only chemical-related issues, but also hardware-related in order to satisfy the necessary process performance.

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Impact of Quantum Capacitance on Intrinsic Inversion Capacitance Characteristics and Inversion-Charge Loss for Multigate III–V-on-Insulator nMOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2015.2500915 ◽

2016 ◽

Vol 63 (1) ◽

pp. 339-344 ◽

Cited By ~ 4

Author(s):

Hsin-Hung Shen ◽

Shih-Lun Shen ◽

Chang-Hung Yu ◽

Pin Su

Keyword(s):

Quantum Capacitance ◽

Charge Loss ◽

Inversion Charge ◽

Capacitance Characteristics ◽

And Inversion

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Development of Electric Power Control using the Capacitance Characteristics of the Fuel Cell

SAE International Journal of Engines ◽

10.4271/2011-01-1346 ◽

2011 ◽

Vol 4 (1) ◽

pp. 1879-1887 ◽

Cited By ~ 1

Author(s):

Hiroyuki Imanishi ◽

Kota Manabe ◽

Tomoya Ogawa ◽

Yasuhiro Nonobe

Keyword(s):

Fuel Cell ◽

Power Control ◽

Electric Power ◽

Capacitance Characteristics

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A quick method to determine the capacitance characteristics of thin layer X5R multilayer capacitors

Journal of the European Ceramic Society ◽

10.1016/j.jeurceramsoc.2011.08.003 ◽

2012 ◽

Vol 32 (1) ◽

pp. 167-173 ◽

Cited By ~ 4

Author(s):

R. Mikkenie ◽

O. Steigelmann ◽

W.A. Groen ◽

J.E. ten Elshof

Keyword(s):

Thin Layer ◽

Quick Method ◽

Capacitance Characteristics ◽

Multilayer Capacitors

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Composition Analysis of Ge Graded Si1-xGex Alloy Films by Capacitance-Voltage Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.383-390.7613 ◽

2011 ◽

Vol 383-390 ◽

pp. 7613-7618

Author(s):

Y. Yang ◽

F. Yu ◽

Ping Han ◽

R.P. Ge ◽

L. Yu

Keyword(s):

Chemical Vapor Deposition ◽

Band Gap ◽

Vapor Deposition ◽

Auger Electron ◽

Chemical Vapor ◽

Composition Analysis ◽

Alloy Films ◽

Capacitance Voltage ◽

Capacitance Characteristics ◽

Contact Barrier

Capacitance-voltage method was used to analyze composition of the Si1-xGex alloy films with a stochiometry gradient of Ge, which were epitaxially grown on Si (100) substrate by chemical vapor deposition. Using the capacitance characteristics of Si1-xGex/Si obtained by applying a reserve bias to the Hg electrode probe, the contact barrier height for Hg/Si1-xGexjunction and Si1-xGex/Si junction, and band gap of SSi1-xGex were estimated respectively. With the band gap of Si1-xGex, composition of Si1-xGex in Hg/Si1-xGex junction and Si1-xGex/Si junction were further obtained. Because analyzed Si1-xGex was formed through bilateral inter-diffusion of Si into the epilayer and Ge into the substrate during the deposition, Ge distribution from surface to substrate in Si1-xGex alloy films can be figured out by fitting to diffusion exponential function. The Ge distribution acquired this way was in accordance with the depth profile by auger electron spectrum.

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