Role of Different Additives on Silicon Dioxide Film Removal Rate during Chemical Mechanical Polishing Using Ceria-Based Dispersions

2010 ◽  
Vol 157 (9) ◽  
pp. H869 ◽  
Author(s):  
P. R. Veera Dandu ◽  
B. C. Peethala ◽  
S. V. Babu
Keyword(s):  
Silicon Dioxide ◽  
Chemical Mechanical Polishing ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Silicon Dioxide Film ◽  
Dioxide Film

scholarly journals Role of Slurry Additives on Chemical Mechanical Planarization of Silicon Dioxide Film in Colloidal Silica Based Slurry

2021 ◽  
Author(s):  
Yue Li ◽  
chenwei wang ◽  
Jianwei Zhou ◽  
Yuanshen Cheng ◽  
晨 续 ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Silicon Dioxide ◽  
Colloidal Silica ◽  
Semiconductor Device ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Image Sensor ◽  
Wafer Surface ◽  
Silicon Dioxide Film ◽  
Dioxide Film

Abstract Chemical mechanical planarization (CMP) is a critical process for smoothing and polishing the surfaces of various material layers in semiconductor device fabrication. The applications of silicon dioxide films are shallow trench isolation, an inter-layer dielectric, and emerging technologies such as CMOS Image Sensor. In this study, the effect of various chemical additives on the removal rate of silicon dioxide film using colloidal silica abrasive during CMP was investigated. The polishing results show that the removal rate of silicon dioxide film first increased and then decreased with an increasing concentration of K+, pH, and abrasive size. The removal rate of silicon dioxide film increased linearly as the abrasive concentration increased. The influence mechanisms of various additives on the removal rate of silicon dioxide film were investigated by constructing simple models and scanning electron microscopy. Further, the stable performance of the slurry was achieved due to the COO- chains generated by poly(acrylamide) hydrolysis weaken the attraction between abrasives. High-quality wafer surfaces with low surface roughness were also thus achieved. The desirable and simple ingredient slurry investigated in this study can effectively enhance the planarization performance, for example, material removal rates and wafer surface roughness.

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

Characterization of silicon dioxide film by high spatial resolution cathodoluminescence spectroscopy

2002 ◽  
Vol 92 (12) ◽  
pp. 7153-7156 ◽  
Author(s):  
M. Yoshikawa ◽  
K. Matsuda ◽  
Y. Yamaguchi ◽  
T. Matsunobe ◽  
Y. Nagasawa ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Spatial Resolution ◽  
High Spatial Resolution ◽  
Silicon Dioxide Film ◽  
Cathodoluminescence Spectroscopy ◽  
Dioxide Film
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