(Invited) The Surface Chemistry of Atomic Layer Deposition (ALD) Processes for Metal Nitride and Metal Oxide Film Growth

2019 ◽  
Vol 33 (2) ◽  
pp. 291-305 ◽  
Author(s):  
Menno Bouman ◽  
Francisco Zaera
Keyword(s):  
Atomic Layer Deposition ◽  
Oxide Film ◽  
Metal Oxide ◽  
Surface Chemistry ◽  
Film Growth ◽  
Atomic Layer ◽  
Metal Nitride ◽  
Layer Deposition ◽  
Metal Oxide Film

scholarly journals The Growth Mechanisms of Atomic Layer Deposition: An Overview

Eksergi ◽  
2020 ◽  
Vol 17 (2) ◽  
pp. 56
Author(s):  
Edy Riyanto ◽  
Erie Martides ◽  
Endro Junianto ◽  
Budi Prawara
Keyword(s):  
Thin Film ◽  
Theoretical Model ◽  
Atomic Layer Deposition ◽  
Surface Chemistry ◽  
Film Growth ◽  
Atomic Layer ◽  
Deposition Process ◽  
Thin Film Growth ◽  
Growth Mechanisms ◽  
Layer Deposition

In this review, the discussion emphasized on the growth mechanisms of atomic layer deposition which consists of a theoretical model and experimentally growth as well as the measurement testing as evidences. The deposition process description with some testing evidences can be used to facilitate in the effort to understand the basic concept of ALD growth mechanisms. Some metal oxides like Al2O3, HfO2, and TiO2 with these employed precursors are typically used for the detailed illustration during the reaction steps. Although the surface chemistry of ALD process has been well understood, systematic description which combine a theoretical and experimentally growth mechanism is still missing. This paper aims to provide a better understanding of ALD growth mechanisms and surface chemistry which eventually able to contribute on the thin film growth processing.

Mechanistic details of atomic layer deposition (ALD) processes for metal nitride film growth

2008 ◽  
Vol 281 (1-2) ◽  
pp. 35-43 ◽  
Author(s):  
Hugo Tiznado ◽  
Menno Bouman ◽  
Byung-Chang Kang ◽  
Ilkeun Lee ◽  
Francisco Zaera
Keyword(s):  
Atomic Layer Deposition ◽  
Film Growth ◽  
Atomic Layer ◽  
Nitride Film ◽  
Metal Nitride ◽  
Layer Deposition

Surface chemistry and film growth during TiN atomic layer deposition using TDMAT and NH3

2003 ◽  
Vol 436 (2) ◽  
pp. 145-156 ◽  
Author(s):  
J.W Elam ◽  
M Schuisky ◽  
J.D Ferguson ◽  
S.M George
Keyword(s):  
Atomic Layer Deposition ◽  
Surface Chemistry ◽  
Film Growth ◽  
Atomic Layer ◽  
Layer Deposition

Atomic Layer Deposition of thin Films Using Sequential Surface Reactions

2000 ◽  
Vol 616 ◽  
Author(s):  
S. M. George ◽  
J.D. Ferguson ◽  
J.W. Klaus
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
Surface Chemistry ◽  
Film Growth ◽  
Surface Reactions ◽  
Atomic Layer ◽  
Single Element ◽  
Transmission Electron ◽  
Layer Deposition

AbstractThin films can be deposited with atomic layer control using sequential surface reactions. The atomic layer deposition (ALD) of compound and single-element films can be accomplished using the appropriate surface chemistry. This paper reviews the ALD of dielectric alumina (Al2O3) films and conducting tungsten (W) films. The Al2O3 films are deposited on submicron BN particles and the surface chemistry is monitored using Fourier transform infrared (FTIR) spectroscopy. Additional transmission electron microscopy (TEM) studies investigated the conformality of the Al2O3 growth on the BN particles. FTIR investigations of the surface chemistry during W ALD are performed on nanometer-sized Si02 particles. Additional in situ spectroscopy ellipsometry studies of W ALD on Si(100) established the W ALD growth rates. Al2O3 and W ALD both illustrate the potential of ALD to obtain conformal and atomic layer controlled thin film growth using sequential surface reactions.

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