Theoretical Simulation of Surface Evolution Using the Random Deposition and Surface Relaxation for Metal Oxide Film in Atomic Layer Deposition

(Invited) The Surface Chemistry of Atomic Layer Deposition (ALD) Processes for Metal Nitride and Metal Oxide Film Growth

ECS Transactions ◽

10.1149/1.3485266 ◽

2019 ◽

Vol 33 (2) ◽

pp. 291-305 ◽

Cited By ~ 19

Author(s):

Menno Bouman ◽

Francisco Zaera

Keyword(s):

Atomic Layer Deposition ◽

Oxide Film ◽

Metal Oxide ◽

Surface Chemistry ◽

Film Growth ◽

Atomic Layer ◽

Metal Nitride ◽

Layer Deposition ◽

Metal Oxide Film

Formation of Metal Oxide Particles in Atomic Layer Deposition During the Chemisorption of Metal Chlorides: A Review

Chemical Vapor Deposition ◽

10.1002/cvde.200400021 ◽

2005 ◽

Vol 11 (2) ◽

pp. 79-90 ◽

Cited By ~ 56

Author(s):

R. L. Puurunen

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Metal Chlorides ◽

Layer Deposition ◽

Oxide Particles

Trap states in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3 prepared by atomic layer deposition

Journal of Applied Physics ◽

10.1063/1.3428492 ◽

2010 ◽

Vol 107 (10) ◽

pp. 106104 ◽

Cited By ~ 43

Author(s):

D. Gregušová ◽

R. Stoklas ◽

Ch. Mizue ◽

Y. Hori ◽

J. Novák ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Trap States ◽

Semiconductor Structures ◽

TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

Electrochemical and Solid-State Letters ◽

10.1149/1.3559770 ◽

2011 ◽

Vol 14 (5) ◽

pp. G27 ◽

Cited By ~ 12

Author(s):

Qi Xie ◽

Jan Musschoot ◽

Marc Schaekers ◽

Matty Caymax ◽

Annelies Delabie ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Significant impact on cathode performance of lithium-ion batteries by precisely controlled metal oxide nanocoatings via atomic layer deposition

Journal of Power Sources ◽

10.1016/j.jpowsour.2013.08.042 ◽

2014 ◽

Vol 247 ◽

pp. 57-69 ◽

Cited By ~ 147

Author(s):

Xifei Li ◽

Jian Liu ◽

Xiangbo Meng ◽

Yongji Tang ◽

Mohammad Norouzi Banis ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Lithium Ion Batteries ◽

Lithium Ion ◽

Atomic Layer ◽

Electrical characteristics of metal-oxide-semiconductor capacitors on p-GaAs using atomic layer deposition of ultrathin HfAlO gate dielectric

Applied Physics Letters ◽

10.1063/1.3007978 ◽

2008 ◽

Vol 93 (19) ◽

pp. 193504 ◽

Cited By ~ 26

Author(s):

Rahul Suri ◽

Bongmook Lee ◽

Daniel J. Lichtenwalner ◽

Nivedita Biswas ◽

Veena Misra

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Gate Dielectric ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Electrical Characteristics ◽

Communication—Reduction of DC Resistance of Ni-Rich Lithium Transition Metal Oxide Cathode by Atomic Layer Deposition

Journal of The Electrochemical Society ◽

10.1149/1945-7111/abf17d ◽

2021 ◽

Vol 168 (4) ◽

pp. 040501

Author(s):

Yang Shi ◽

Yingjie Xing ◽

Kitae Kim ◽

Taehwan Yu ◽

Albert L. Lipson ◽

...

Keyword(s):

Transition Metal ◽

Atomic Layer Deposition ◽

Metal Oxide ◽

Transition Metal Oxide ◽

Atomic Layer ◽

Oxide Cathode ◽

Layer Deposition ◽

Communication Reduction ◽

Dc Resistance

GaAs metal-oxide-semiconductor capacitors using atomic layer deposition of HfO2 gate dielectric: Fabrication and characterization

Applied Physics Letters ◽

10.1063/1.2806190 ◽

2007 ◽

Vol 91 (19) ◽

pp. 193503 ◽

Cited By ~ 41

Author(s):

D. Shahrjerdi ◽

D. I. Garcia-Gutierrez ◽

T. Akyol ◽

S. R. Bank ◽

E. Tutuc ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Gate Dielectric ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Layer Deposition ◽

Fabrication And Characterization

Evaluation of AlGaN/GaN metal–oxide–semicondutor high-electron mobility transistors with plasma-enhanced atomic layer deposition HfO2/AlN date dielectric for RF power applications

Japanese Journal of Applied Physics ◽

10.7567/jjap.56.094101 ◽

2017 ◽

Vol 56 (9) ◽

pp. 094101

Author(s):

Yu Sheng Chiu ◽

Quang Ho Luc ◽

Yueh Chin Lin ◽

Jui Chien Huang ◽

Chang Fu Dee ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

Atomic Layer ◽

High Electron ◽

Rf Power ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

The Influence of Hf-Composition on Atomic Layer Deposition HfSiON Gated Metal–Oxide–Semiconductor Field-Effect Transistors after Channel-Hot-Carrier Stress

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c009 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C009 ◽

Cited By ~ 5

Author(s):

Shuang-Yuan Chen ◽

Hung-Wen Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Atomic Layer ◽

Oxide Semiconductor ◽

Hot Carrier ◽

Layer Deposition ◽

Hot Carrier Stress