Comparison of Nonvolatile Memory Effects in Ni-Based Layered and Dotted Nanostructures Prepared through Atomic Layer Deposition

2011 ◽  
Vol 14 (7) ◽  
pp. J41 ◽  
Author(s):  
Jun-Young Lee ◽  
Jeong-Eun Kim ◽  
Jin-Ha Hwang ◽  
Jae-Pyoung Ahn ◽  
Byung Kook Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Nonvolatile Memory ◽  
Atomic Layer ◽  
Memory Effects ◽  
Layer Deposition

Nonvolatile Memory Effects of NiO Layers Embedded in Al[sub 2]O[sub 3] High-k Dielectrics Using Atomic Layer Deposition

2010 ◽  
Vol 13 (6) ◽  
pp. H209 ◽  
Author(s):  
Wontae Cho ◽  
Sun Sook Lee ◽  
Taek-Mo Chung ◽  
Chang Gyoun Kim ◽  
Ki-Seok An ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Nonvolatile Memory ◽  
Atomic Layer ◽  
Memory Effects ◽  
Layer Deposition ◽  
High K

Promising Materials of Nonvolatile Memory Based on HfOх and Achievement of Device Parameters in the TiN/Hf0.5Zr0.5O2/ TiN/SiO2/Si and TiN/HfXAl1-XOY/Pt/SiO2/Si Test Structures Obtained on the National Technological Basis

2018 ◽  
Vol 386 ◽  
pp. 172-177
Author(s):  
Oleg M. Orlov
Keyword(s):  
Atomic Layer Deposition ◽  
Integrated Circuits ◽  
Nonvolatile Memory ◽  
Atomic Layer ◽  
Resistive Memory ◽  
Technological Basis ◽  
Layer Deposition ◽  
Non Volatile Memory ◽  
Volatile Memory

The properties and applications of materials with non-volatile memory based on HfO2 were briefly considered. In addition, an overview of the obtained results was given. On the basis of these results, the possibility of use of the structures TiN/ Hf0.5Zr0.5O2/ TiN/ SiO2/ Si and TiN/ HfxAl1-xOy/ Pt/ SiO2/ Si for the non-volatile memory of FeRAM and ReRAM types obtained by the atomic-layer deposition was shown. In addition, the scalability of these elements and opportunity to create promising submicron integrated circuits for ferroelectric and resistive memory were demonstrated.

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