Role of high-k gate insulators for oxide thin film transistors

2010 ◽  
Vol 518 (11) ◽  
pp. 3030-3032 ◽  
Author(s):  
Sang Yeol Lee ◽  
Seongpil Chang ◽  
Jae-Sang Lee
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Gate Insulators ◽  
High K

Role of Rare Earth Ions in Anodic Gate Dielectrics for Indium-Zinc-Oxide Thin-Film Transistors

2012 ◽  
Vol 159 (5) ◽  
pp. H502-H506 ◽  
Author(s):  
Dongxiang Luo ◽  
Linfeng Lan ◽  
Miao Xu ◽  
Hua Xu ◽  
Min Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Rare Earth ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Rare Earth Ions ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide

Role of gallium and yttrium dopants on the stability and performance of solution processed indium oxide thin-film transistors

2019 ◽  
Vol 7 (25) ◽  
pp. 7627-7635 ◽  
Author(s):  
Felix Jaehnike ◽  
Duy Vu Pham ◽  
Claudia Bock ◽  
Ulrich Kunze
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Metal Oxide Thin Film ◽  
And Performance ◽  
The Stability ◽  
Yttrium Doping ◽  
Indium Oxide Thin Film

We study the effect of gallium and yttrium doping on both the electrical performance and the stability of indium based metal-oxide thin-film transistors (MOTFTs) at varied concentrations.

Effect of Gd3+ Doping on Sol–Gel Prepared Y2O3 Films as Gate Insulators for Oxide Thin Film Transistors

2021 ◽  
Vol 21 (9) ◽  
pp. 4694-4699
Author(s):  
Byung-Yoon Park ◽  
Sungho Choi ◽  
Taek Ahn
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Sol Gel ◽  
Oxide Thin Film ◽  
Operating Voltage ◽  
Robust Solution ◽  
Gate Insulators ◽  
Low Leakage ◽  
Low Leakage Current

The relationships between the microstructure and the dielectric properties of sol–gel prepared Y2O3 films with various Gd3+ doping were systematically investigated. Robust solution processed lanthanide films, (Y1−xGdx)2O3 (0 < x ≤ 0.5), are demonstrated as high-k gate insulators for low voltage-driven oxide thin film transistors and their optimized composition is presented. With the proper amount of Gd3+ doping, the corresponding thin film insulators exhibit low leakage current with increased dielectric constant. The resultant Zn–Sn–O/(Y, Gd)2O3 TFT exhibits enhanced performance, by a factor of 10.7 compared with TFTs using a SiO2 insulator, with a field-effect mobility of ~3.15 cm2V−1s−1 and an exceptionally low operating voltage <15 V.

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