Effective Trapping Reduction in SiO2/GaN MOS Structure by High Pressure Water Vapor Annealing
2019 ◽
Vol 8
(8)
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pp. P388-P391
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2006 ◽
Vol 45
(4B)
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pp. 3462-3465
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2007 ◽
Vol 204
(5)
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pp. 1302-1306
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2014 ◽
Vol 31
(10)
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pp. 108501
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2009 ◽
Vol 129
(11)
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pp. 1332-1335
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2016 ◽
Vol 120
(8)
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pp. 4571-4580
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2015 ◽
Vol 62
(8)
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pp. 2423-2428
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