Physical Properties of Ultra-Thin Films and Heterostructures Based on Materials with Strong Electronic Correlation Deposited by Pulsed Laser Deposition with In-Situ Reflection High Energy Electron Diffraction

2006 ◽  
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Physical Properties ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
Electronic Correlation ◽  
High Energy Electron ◽  
Strong Electronic Correlation

Pulsed Laser Deposition of High-Quality Manganite Thin Films at Low Background Pressures with in-situ Reflection High Energy Electron Diffraction

2019 ◽  
Vol 3 (9) ◽  
pp. 55-63 ◽  
Author(s):  
Antonello Tebano ◽  
Carmela Aruta ◽  
Pier Gianni Medaglia ◽  
Giuseppe Balestrino ◽  
Norberto G. Boggio ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
High Energy Electron ◽  
High Quality ◽  
Low Background

scholarly journals Artificial Construction of the Layered Ruddlesden–Popper Manganite La2Sr2Mn3O10by Reflection High Energy Electron Diffraction Monitored Pulsed Laser Deposition

2012 ◽  
Vol 134 (18) ◽  
pp. 7700-7714 ◽  
Author(s):  
Robert G. Palgrave ◽  
Pavel Borisov ◽  
Matthew S. Dyer ◽  
Sean R. C. McMitchell ◽  
George R. Darling ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Energy Electron ◽  
Laser Deposition ◽  
High Energy Electron

Epitaxial growth of Cr [001] on LiF [001]

1989 ◽  
Vol 160 ◽  
Author(s):  
J. Mattson ◽  
M. B. Brodsky ◽  
J. Ketterson ◽  
H. You
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Epitaxial Growth ◽  
High Energy ◽  
High Energy Electron ◽  
X Ray Diffraction ◽  
X Ray ◽  
Substrate Temperatures ◽  
Deposition Conditions

AbstractWe report X-ray diffraction and in-situ RHEED( Reflection High Energy Electron Diffraction) measurements on Cr thin films deposited on LiF[001] single crystal substrates for thicknesses up to 300 nm and for substrate temperatures from 30 to 450°C. From these measurements we determine the range of deposition conditions necessary for epitaxial growth and the stress in these films as a function of film thickness.

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