Direct growth of nano-crystalline graphite films using pulsed laser deposition with in-situ monitoring based on reflection high-energy electron diffraction technique

2016 ◽  
Vol 108 (12) ◽  
pp. 123107 ◽  
Author(s):  
Jeong Hun Kwak ◽  
Sung Su Lee ◽  
Hyeon Jun Lee ◽  
Gopinathan Anoop ◽  
Hye Jeong Lee ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
High Energy ◽  
In Situ Monitoring ◽  
Laser Deposition ◽  
High Energy Electron ◽  
Nano Crystalline ◽  
Electron Diffraction Technique ◽  
Direct Growth ◽  
Crystalline Graphite

In-situ monitoring by reflective high energy electron diffraction during pulsed laser deposition

1999 ◽  
Vol 138-139 ◽  
pp. 17-23 ◽  
Author(s):  
Dave H.A Blank ◽  
Guus J.H.M Rijnders ◽  
Gertjan Koster ◽  
Horst Rogalla
Keyword(s):  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Energy Electron ◽  
In Situ Monitoring ◽  
Laser Deposition ◽  
High Energy Electron

Pulsed Laser Deposition of High-Quality Manganite Thin Films at Low Background Pressures with in-situ Reflection High Energy Electron Diffraction

2019 ◽  
Vol 3 (9) ◽  
pp. 55-63 ◽  
Author(s):  
Antonello Tebano ◽  
Carmela Aruta ◽  
Pier Gianni Medaglia ◽  
Giuseppe Balestrino ◽  
Norberto G. Boggio ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
High Energy Electron ◽  
High Quality ◽  
Low Background

In situ monitoring of electrical resistivity and plasma during pulsed laser deposition growth of ultra-thin silver films

2021 ◽  
Vol 130 (8) ◽  
pp. 085301
Author(s):  
M. Novotný ◽  
P. Fitl ◽  
S. A. Irimiciuc ◽  
J. Bulíř ◽  
J. More-Chevalier ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
In Situ Monitoring ◽  
Laser Deposition ◽  
Silver Films

Combinatorial optimization of atomically controlled growth for oxide films by the carrousel type laser molecular beam epitaxy

2001 ◽  
Vol 700 ◽  
Author(s):  
R. Takahashi ◽  
Y. Matsumoto ◽  
H. Koinuma ◽  
M. Lippmaa ◽  
M. Kawasaki
Keyword(s):  
Molecular Beam ◽  
Ybco Film ◽  
High Sensitivity ◽  
High Energy ◽  
In Situ Monitoring ◽  
Laser Deposition ◽  
Crystal Habit ◽  
Laser Focusing ◽  
The One

AbstractA new combinatorial pulsed laser deposition system has been developed for rapid optimization of epitaxial growth process by using a carrousel type masking plate. Under in-situ monitoring of growing surface with reflection high energy electron diffraction, eight films with different compositions or preparation parameters can be fabricated on a single substrate. By using this system, we have succeeded in the one lot optimization of YBa2Cu3O7-d(YBCO), PrGaO3, SrO and BaO film growths on the B-site (TiO2) terminated SrTiO3(001) substrates. Key results from these experiments include the high sensitivity of YBCO film crystallinity to the laser focusing as well as of growth behavior of epitaxial SrO and BaO films to the crystal habit with the underlying atomic layers.

Two-dimensional growth of SrTiO3 thin films on (001) MgO substrates using pulsed laser deposition and reflection high energy electron diffraction

2009 ◽  
Vol 95 (17) ◽  
pp. 174102 ◽  
Author(s):  
S. R. C. McMitchell ◽  
Y. Y. Tse ◽  
H. Bouyanfif ◽  
T. J. Jackson ◽  
I. P. Jones ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Energy Electron ◽  
Laser Deposition ◽  
Two Dimensional ◽  
High Energy Electron ◽  
Dimensional Growth

scholarly journals Artificial Construction of the Layered Ruddlesden–Popper Manganite La2Sr2Mn3O10by Reflection High Energy Electron Diffraction Monitored Pulsed Laser Deposition

2012 ◽  
Vol 134 (18) ◽  
pp. 7700-7714 ◽  
Author(s):  
Robert G. Palgrave ◽  
Pavel Borisov ◽  
Matthew S. Dyer ◽  
Sean R. C. McMitchell ◽  
George R. Darling ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Energy Electron ◽  
Laser Deposition ◽  
High Energy Electron

Reflection Electron Diffraction and Structural Behavior of Gaas / Gaas (111)B Grown Via Mbe

1990 ◽  
Vol 208 ◽  
Author(s):  
K. C. Rajkumar ◽  
P. Chen ◽  
A. Madhukar
Keyword(s):  
Electron Diffraction ◽  
Surface Morphology ◽  
High Energy ◽  
In Situ Monitoring ◽  
Spot Intensity ◽  
High Energy Electron ◽  
Surface Phase ◽  
Gaas Films ◽  
Reflection Electron Diffraction

Homoepitaxy on the {111} face of GaAs has been long known to give films with surfaces marred with macroscopic features. We have identified this problem to be tied to the surface phase regime. We have used Reflection High Energy Electron Diffraction (RHEED) to identify a phase regime wherein specular-surfaced GaAs films can be grown. We have found that it is possible to glean information regarding the macroscopic surface morphology by monitoring the variation in the RHEED specular spot intensity during growth. This has allowed in situ monitoring of the macroscopic surface morphology of a growing film in real time which has made it possible to grow specular-surfaced films reproducibly.

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