Tensile Stress Generation in Polycrystalline Thin Films: The Ubiquitous Role of Coalescence

2007 ◽  
Keyword(s):  
Thin Films ◽  
Tensile Stress ◽  
Stress Generation ◽  
Polycrystalline Thin Films

Sn1−xSe thin films with low thermal conductivity: role of stoichiometric deviation in thermal transport

2018 ◽  
Vol 6 (37) ◽  
pp. 10083-10087 ◽  
Author(s):  
Giuk Jeong ◽  
Yoon Hwan Jaung ◽  
Jekyung Kim ◽  
Jae Yong Song ◽  
Byungha Shin
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Thermal Transport ◽  
Low Thermal Conductivity ◽  
Tin Selenide ◽  
Polycrystalline Thin Films

Tin selenide (Sn1−xSe) polycrystalline thin films were prepared by thermal co-evaporation, and the thermoelectric properties of the Sn1−xSe thin films were investigated.

The role of self-shadowing on growth and scaling laws of faceted polycrystalline thin films

2010 ◽  
Vol 58 (15) ◽  
pp. 5150-5159 ◽  
Author(s):  
Colin Ophus ◽  
Timo Ewalds ◽  
Erik J. Luber ◽  
David Mitlin
Keyword(s):  
Thin Films ◽  
Scaling Laws ◽  
Polycrystalline Thin Films

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Transmission Electron Microscopy studies of texture of Cr underlayer of magnetic recording hard disk

1991 ◽  
Vol 49 ◽  
pp. 580-581
Author(s):  
L. Tang ◽  
G. Thomas ◽  
M. R. Khan ◽  
S. L. Duan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Magnetic Recording ◽  
Magnetic Thin Films ◽  
Magnetic Films ◽  
Substrate Bias ◽  
Epitaxial Relationship ◽  
Transmission Electron

Cr thin films are often used as underlayers for Co alloy magnetic thin films, such as Co1, CoNi2, and CoNiCr3, for high density longitudinal magnetic recording. It is belived that the role of the Cr underlayer is to control the growth and texture of the Co alloy magnetic thin films, and, then, to increase the in plane coercivity of the films. Although many epitaxial relationship between the Cr underlayer and the magnetic films, such as ﹛1010﹜Co/ {110﹜Cr4, ﹛2110﹜Co/ ﹛001﹜Cr5, ﹛0002﹜Co/﹛110﹜Cr6, have been suggested and appear to be related to the Cr thickness, the texture of the Cr underlayer itself is still not understood very well. In this study, the texture of a 2000 Å thick Cr underlayer on Nip/Al substrate for thin films of (Co75Ni25)1-xTix dc-sputtered with - 200 V substrate bias is investigated by electron microscopy.

Transmission Electron Microscopy of Evaporated Perylene Thin Films

1990 ◽  
Vol 48 (2) ◽  
pp. 336-337
Author(s):  
C. Ewins ◽  
J.R. Fryer
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Electronics ◽  
High Vacuum ◽  
Amorphous Layer ◽  
Electric Heater ◽  
Transmission Electron ◽  
Polycyclic Aromatic

The preparation of thin films of organic molecules is currently receiving much attention because of the need to produce good quality thin films for molecular electronics. We have produced thin films of the polycyclic aromatic, perylene C10H12 by evaporation under high vacuum onto a potassium chloride (KCl) substrate. The role of substrate temperature in determining the morphology and crystallography of the films was then investigated by transmission electron microscopy (TEM).The substrate studied was the (001) face of a freshly cleaved crystal of KCl. The temperature of the KCl was controlled by an electric heater or a cold finger. The KCl was heated to 200°C under a vacuum of 10-6 torr and allowed to cool to the desired temperature. The perylene was then evaporated over a period of one minute from a molybdenum boat at a distance of 10cm from the KCl. The perylene thin film was then backed with an amorphous layer of carbon and floated onto copper microscope grids.

Electron diffraction studies of amorphous and polycrystalline thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 118-119
Author(s):  
D J H Cockayne ◽  
D R McKenzie
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Polycrystalline Materials ◽  
Good Resolution ◽  
Scattered Intensity ◽  
Radial Density ◽  
X Ray ◽  
Polycrystalline Thin Films ◽  
Nitrogen Ion ◽  
Diffraction Patterns

The study of amorphous and polycrystalline materials by obtaining radial density functions G(r) from X-ray or neutron diffraction patterns is a well-developed technique. We have developed a method for carrying out the same technique using electron diffraction in a standard TEM. It has the advantage that studies can be made of thin films, and on regions of specimen too small for X-ray and neutron studies. As well, it can be used to obtain nearest neighbour distances and coordination numbers from the same region of specimen from which HREM, EDS and EELS data is obtained.The reduction of the scattered intensity I(s) (s = 2sinθ/λ ) to the radial density function, G(r), assumes single and elastic scattering. For good resolution in r, data must be collected to high s. Previous work in this field includes pioneering experiments by Grigson and by Graczyk and Moss. In our work, the electron diffraction pattern from an amorphous or polycrystalline thin film is scanned across the entrance aperture to a PEELS fitted to a conventional TEM, using a ramp applied to the post specimen scan coils. The elastically scattered intensity I(s) is obtained by selecting the elastically scattered electrons with the PEELS, and collecting directly into the MCA. Figure 1 shows examples of I(s) collected from two thin ZrN films, one polycrystalline and one amorphous, prepared by evaporation while under nitrogen ion bombardment.

scholarly journals The role of the substrate on the mechanical and thermal stability of Pd thin films during hydrogen (de)sorption

2021 ◽  
Vol 46 (5) ◽  
pp. 4137-4153
Author(s):  
Neha Verma ◽  
Rob Delhez ◽  
Niek M. van der Pers ◽  
Frans D. Tichelaar ◽  
Amarante J. Böttger
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Thermal Stability Of
Sign in / Sign up

Export Citation Format

Share Document