Effective phase control of silicon films during high-rate deposition in atmospheric-pressure very high-frequency plasma: Impacts of gas residence time on the performance of bottom-gate thin film transistors

2013 ◽  
Vol 234 ◽  
pp. 2-7 ◽  
Author(s):  
H. Kakiuchi ◽  
H. Ohmi ◽  
T. Yamada ◽  
A. Hirano ◽  
T. Tsushima ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
High Frequency ◽  
Thin Film Transistors ◽  
High Rate ◽  
Very High Frequency ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Effective Phase ◽  
Very High ◽  
Bottom Gate

Characterization of High-Rate Deposited Microcrystalline Si Films Prepared using Atmospheric-Pressure Very High-Frequency Plasma

2019 ◽  
Vol 25 (8) ◽  
pp. 405-412
Author(s):  
Keita Tabuchi ◽  
Kentato Ouchi ◽  
Hiromasa Ohmi ◽  
Hiroaki Kakiuchi ◽  
Kiyoshi Yasutake
Keyword(s):  
Atmospheric Pressure ◽  
High Frequency ◽  
High Rate ◽  
Very High Frequency ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Si Films ◽  
Very High

High-Rate Deposition of Intrinsic Amorphous Silicon Layers for Solar Cells Using Very High Frequency Plasma at Atmospheric Pressure

2006 ◽  
Vol 45 (4B) ◽  
pp. 3587-3591 ◽  
Author(s):  
Hiroaki Kakiuchi ◽  
Hiromasa Ohmi ◽  
Yasuhito Kuwahara ◽  
Mitsuhiro Matsumoto ◽  
Yusuke Ebata ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Atmospheric Pressure ◽  
High Frequency ◽  
High Rate ◽  
Very High Frequency ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Very High
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