scholarly journals The Bipolar Resistance Switching Behavior with a Pt/CoSiOX/TiN Structure of Nonvolatile Memory Device

2012 ◽  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Device ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Nonvolatile Memory Device ◽  
Bipolar Resistance Switching

Resistance Switching in Ni/HfOx/Ni Nonvolatile Memory Device with CF4/O2Plasma Post-treatment

2012 ◽  
Vol 51 (1S) ◽  
pp. 01AJ10
Author(s):  
Chiung-Hui Lai ◽  
Te-Shun Chang ◽  
Wen-Hsien Tzeng ◽  
Kow-Ming Chang
Keyword(s):  
Nonvolatile Memory ◽  
Memory Device ◽  
Resistance Switching ◽  
Post Treatment ◽  
Nonvolatile Memory Device

Facial synthesis of KCu7S4nanobelts for nonvolatile memory device applications

2016 ◽  
Vol 4 (3) ◽  
pp. 589-595 ◽  
Author(s):  
Chun-Yan Wu ◽  
Xin-Gang Wang ◽  
Zhi-Qiang Pan ◽  
You-Yi Wang ◽  
Yong-Qiang Yu ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Schottky Diode ◽  
Retention Time ◽  
Nonvolatile Memory ◽  
Memory Device ◽  
Switching Behavior ◽  
Resistive Switching Behavior ◽  
Nonvolatile Memory Device ◽  
Device Applications ◽  
A Current

A memory device was fabricated based on KCu7S4nanobelts/Cu Schottky diode which displayed typical resistive switching behavior with a low set voltage of 0.4–1 V, a current ON/OFF ratio of ∼104, and a retention time >104s.

Flexible Nanoporous WO3–x Nonvolatile Memory Device

ACS Nano ◽  
2016 ◽  
Vol 10 (8) ◽  
pp. 7598-7603 ◽  
Author(s):  
Yongsung Ji ◽  
Yang Yang ◽  
Seoung-Ki Lee ◽  
Gedeng Ruan ◽  
Tae-Wook Kim ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Memory Device ◽  
Nonvolatile Memory Device

Novel SONOS-Type Nonvolatile Memory Device With Optimal Al Doping in HfAlO Charge-Trapping Layer

2008 ◽  
Vol 29 (3) ◽  
pp. 265-268 ◽  
Author(s):  
Ping-Hung Tsai ◽  
Kuei-Shu Chang-Liao ◽  
Chu-Yung Liu ◽  
Tien-Ko Wang ◽  
P. J. Tzeng ◽  
...  
Keyword(s):  
Nonvolatile Memory ◽  
Charge Trapping ◽  
Memory Device ◽  
Al Doping ◽  
Nonvolatile Memory Device

Oxygen migration process in the interfaces during bipolar resistance switching behavior of WO3−x-based nanoionics devices

2012 ◽  
Vol 100 (23) ◽  
pp. 231603 ◽  
Author(s):  
Rui Yang ◽  
Kazuya Terabe ◽  
Tohru Tsuruoka ◽  
Tsuyoshi Hasegawa ◽  
Masakazu Aono
Keyword(s):  
Resistance Switching ◽  
Switching Behavior ◽  
Migration Process ◽  
Oxygen Migration ◽  
Bipolar Resistance Switching
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