Effect of Particle Contamination on Extreme Ultraviolet (EUV) Mask and Megasonic Cleaning Process for Its Removal

2015 ◽  
Keyword(s):  
Extreme Ultraviolet ◽  
Cleaning Process ◽  
Megasonic Cleaning ◽  
Particle Contamination

Effect of Particle Contamination on Extreme Ultraviolet (EUV) Mask and Megasonic Cleaning Process for Its Removal

2015 ◽  
Vol 69 (8) ◽  
pp. 101-108 ◽  
Author(s):  
M.-S. Kim ◽  
H.-R. Ji ◽  
I.-C. Choi ◽  
H.-T. Kim ◽  
S.-H. Jang ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
Cleaning Process ◽  
Megasonic Cleaning ◽  
Particle Contamination

Slurry Residue Removal in Post Chemical Mechanical Polishing

1999 ◽  
Author(s):  
Ahmed A. Busnaina ◽  
Naim Moumen
Keyword(s):  
Chemical Mechanical Polishing ◽  
Silicon Wafers ◽  
Mechanical Polishing ◽  
Operating Conditions ◽  
Cleaning Process ◽  
Megasonic Cleaning ◽  
Residue Removal ◽  
Particulate Contamination

Abstract The megasonic cleaning process proved to be an essential process in cleaning silicon wafers after processes such as pre-oxidation, pre-CVD, pre-EPI, post-ASH and lately post-CMP. Current post-CMP cleans are contact cleaning techniques. These contact techniques have a low throughput and may cause wafer scratching. In addition, in contact cleaning, brush shedding which occurs under many operating conditions causes additional particulate contamination. There is a need for an effective post-CMP cleaning process. Megasonic cleaning provides the best alternative or compliment to brush clean.

Removal of Submicron Particles Using High Frequency Ultrasonics

1996 ◽  
Author(s):  
Ahmed A. Busnaina ◽  
Fen Dai
Keyword(s):  
High Frequency ◽  
Semiconductor Manufacturing ◽  
Submicron Particles ◽  
Particle Removal ◽  
Cleaning Process ◽  
Submicron Particle ◽  
New Techniques ◽  
Megasonic Cleaning ◽  
Ultrasonic Cleaning ◽  
Particulate Contamination

Abstract High-frequency ultrasonic cleaning is widely used in the semiconductor and other industries affected by contamination for the removal of particulate contamination. High frequency (near 1 MHz) ultrasonic cleaning (known as megasonic cleaning) is specially used in semiconductor manufacturing [1]. Many studies concerning submicron particle removal using megasonic and ultrasonic cleaning has been conducted recently [2–7]. The megsonic cleaning process proved to be the essential processes in cleaning silicon wafers after processes such as CMP, RIE, CVD, Sputter, etc. This paper introduces recent results that involve new techniques for introducing the ultrasonic energy in the cleaning bath.

The Influence of the Angle of Incidence in Megasonic Cleaning

2012 ◽  
Vol 187 ◽  
pp. 163-166 ◽  
Author(s):  
Steven Brems ◽  
Marc Hauptmann ◽  
Elisabeth Camerotto ◽  
Xiu Mei Xu ◽  
Stefan De Gendt ◽  
...  
Keyword(s):  
Silicon Wafer ◽  
Acoustic Waves ◽  
Angle Of Incidence ◽  
Particle Removal ◽  
Cleaning Process ◽  
Acoustic Transmission ◽  
Cleaning Efficiency ◽  
Megasonic Cleaning ◽  
Schlichting Streaming ◽  
Si Wafer

The megasonic cleaning efficiency is evaluated as a function of the angle of incidence of acoustic waves on a Si wafer. Acoustic Schlichting streaming alone is not able to remove nanoparticles smaller than 400 nm. It is shown that oscillating or collapsing behavior of bubbles are responsible for removing nanoparticles smaller than 400 nm during a cleaning process with ultrasound. Optimal particle removal efficiency is obtained around the angle of acoustic transmission of the silicon wafer.

Noncontact Physical Removal of Nano-Scale Particles From Surfaces

2001 ◽  
Author(s):  
Ahmed A. Busnaina ◽  
Hong Lin
Keyword(s):  
Semiconductor Manufacturing ◽  
Pressure Fluctuations ◽  
Acoustic Streaming ◽  
Particle Removal ◽  
Cleaning Process ◽  
Sound Waves ◽  
Megasonic Cleaning ◽  
Nano Scale ◽  
Technology Roadmap ◽  
Sonic Energy

Abstract With the International Technology Roadmap for Semiconductors decreasing the particle removal requirements from 125nm (0.3–0.75/cm2) in 1997 to 25nm (0.01–0.15/cm2) in 2011, an era of the most challenging cleaning applications in semiconductor manufacturing is upon us [1. Megasonic cleaning is a widely used non-contact cleaning technique. In megasonic cleaning, wafers are immersed in a cleaning liquid medium to which sonic energy is applied. High intensity sound waves generate pressure fluctuations and acoustic streaming which detach the particles from the surface and remove them. Busnaina et al [2–3 studied megasonic particle removal and the effect of acoustic streaming on the cleaning process especially in post-CMP applications. It is important to know the advantage and the limitation of megasonic cleaning technique in nano-scale particles removal.

scholarly journals Photoluminescence-based detection of particle contamination on extreme ultraviolet reticles

2015 ◽  
Vol 86 (6) ◽  
pp. 063109
Author(s):  
A. Gao ◽  
P. J. Rizo ◽  
L. Scaccabarozzi ◽  
C. J. Lee ◽  
V. Banine ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
Particle Contamination

The Importance of Cavitation Hysteresis in Megasonic Cleaning

2012 ◽  
Vol 187 ◽  
pp. 171-175 ◽  
Author(s):  
Elisabeth Camerotto ◽  
Stefan de Gendt ◽  
Marc Hauptmann ◽  
Denis Shamiryan ◽  
Marc M. Heyns ◽  
...  
Keyword(s):  
Delay Time ◽  
Acoustic Cavitation ◽  
Acoustic Power ◽  
Hysteretic Behavior ◽  
Cleaning Process ◽  
Cleaning Efficiency ◽  
Megasonic Cleaning ◽  
Acoustic Transducers ◽  
Fundamental Understanding ◽  
And Behavior

An improved fundamental understanding of the megasonic cleaning process is necessary to optimize cleaning efficiency and minimize the unwanted damage to fragile structures. Argon sonoluminescence (SL) measurements are done to achieve an improved insight in the collapse threshold and behavior of microbubbles. This paper reports on acoustic cavitation by means of Ar Sonoluminescence (SL) investigation achieved with a dedicated test cell, a photomultiplier tube (PMT) and a gasification system. The results show an increase in SL signal as a function of the applied acoustic power density. An increase in Ar concentration results in a decrease in SL signal. Furthermore, a clear hysteretic behavior in the SL signal is identified when ramping the acoustic power up and down. This hysteresis effect can be attributed to the nucleation of bubbles during the increasing branch of the power loop. Finally the time evolution of SL light after the switching on of the acoustic transducers revealed the existence of a delay time.

SI3N4 Particle Removal Efficiency Study

1997 ◽  
Vol 477 ◽  
Author(s):  
Jane Qian Liu ◽  
Carolyn Lee ◽  
Joseph M. Rosamilia ◽  
Tom Boone ◽  
Veronica Czitrom ◽  
...  
Keyword(s):  
Removal Efficiency ◽  
Defect Density ◽  
Bath Temperature ◽  
Solution Chemistry ◽  
Particle Removal ◽  
Megasonic Cleaning ◽  
Wafer Cleaning ◽  
Particle Contamination ◽  
The Impact ◽  
Improve Device

ABSTRACTControlling particle contamination in wafer cleaning is important to reduce defect density and improve device performance and yield. In this study, a screening experiment was employed to evaluate particle removal efficiency among different cleanings, including FSI BCLN, bench rinse and dry only, bench SC1/megasonic only, bench RCA cleaning, and bench RCA-based cleaning. To optimize particle removal efficiency in RCA-based cleaning, a design of experiment (DOE) has been done to investigate the impact of SC1/megasonic cleaning on Si3N4 particle removal efficiency. Bath temperature, megasonic power, and solution chemistry of SCI bath were evaluated. The removal efficiency in relations to particle sizes was also investigated

Parameters affecting megasonic power transmittance in the megasonic cleaning process

1998 ◽  
Author(s):  
Yong-Hoon Kim ◽  
Jin-Hong Park ◽  
Keumhee H. Lee ◽  
Seong-Woon Choi ◽  
Hee-Sun Yoon ◽  
...  
Keyword(s):  
Cleaning Process ◽  
Megasonic Cleaning
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