D-74 Invited—Structural Investigation of Combinatorial Ge-Co-Mn Epitaxial Thin-Film System Using Synchrotron X-ray Microprobe

2009 ◽  
Vol 24 (2) ◽  
pp. 164-164
Author(s):  
Y. S. Chu ◽  
B. A. Collins ◽  
L. He ◽  
F. Tsui
Keyword(s):  
Thin Film ◽  
Structural Investigation ◽  
Film System ◽  
Epitaxial Thin Film ◽  
X Ray ◽  
Thin Film System ◽  
D 74

Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai
Keyword(s):  
Thin Film ◽  
Film System ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Thin Film System ◽  
Glancing Angle ◽  
Integrated Intensity ◽  
Al Thin Film ◽  
Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

Structural and Concentration Heterogeneities during Formation of Silicide Phases in the Thin Film System Ti(5nm)/Ni(24nm)/Si(001)

2013 ◽  
Vol 344 ◽  
pp. 79-84
Author(s):  
S.I. Sidorenko ◽  
S.M. Voloshko ◽  
Yu.M. Мakogon ◽  
O.P. Pavlov ◽  
I.E. Kotenko ◽  
...  
Keyword(s):  
Thin Film ◽  
Mass Spectrometry ◽  
Solid State ◽  
Auger Spectroscopy ◽  
Solid State Reactions ◽  
Layer By Layer ◽  
Film System ◽  
X Ray ◽  
Thin Film System ◽  
Secondary Ions

By the methods of Auger-spectroscopy and mass-spectrometry of secondary ions, small-angle electron diffraction, X-ray and resistometry analyses the solid-state reactions in the Ti(5 nm)/ Ni(24 nm)/Si(001) thin film system at annealing in running nitrogen in the temperature interval of 723 – 1273 К are investigated. Regularities of phase transformations, consistency of solid-state reactions, layer-by-layer redistribution of components during annealing, features of surface morphology during formation of inclusions of silicide phases are established.

Solid-State Reactions in Ni(10 nm)/C(2 nm)/Si(001) Thin Film System

2007 ◽  
Vol 264 ◽  
pp. 155-158
Author(s):  
Yu.N. Makogon ◽  
O.P. Pavlova ◽  
G. Beddies ◽  
A.V. Mogilatenko ◽  
O.V. Chukhrai
Keyword(s):  
Thin Film ◽  
Solid State ◽  
Solid State Reactions ◽  
Strong Impact ◽  
Film System ◽  
Nitrogen Flow ◽  
Environment Effect ◽  
X Ray ◽  
Resistivity Measurements ◽  
Thin Film System

Annealing environment effect on the phase formation in Ni(10 nm)/C(2 nm)/Si(001) thin film system produced by sequential sputtering of C and Ni targets without vacuum breaking was under investigation. The specimens were annealed 30 s in vacuum of 1.3·10-4 Pa and in nitrogen flow in the temperature range of 450 - 1000°C. The temperature stimulated solid-state reactions that occur as the result of interdiffusion processes between layers of the thin film system under investigations were examined by X-ray - and electron diffractions, resistivity measurements and Rutherford backscattering. It was established that an annealing environment has a strong impact on the development of the solid-state reactions in Ni(10 nm)/C(2 nm)/Si(001) thin film system.

Phase Formation and Phase Stability in the Al-Ti Thin Film System

1990 ◽  
Vol 213 ◽  
Author(s):  
L.R. Parks ◽  
D.A. Lilienfeld ◽  
P. BØRgesen ◽  
R. Raj
Keyword(s):  
Thin Film ◽  
Phase Stability ◽  
Rutherford Backscattering Spectrometry ◽  
Intermetallic Phases ◽  
Film System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Temperatures ◽  
Thin Film System ◽  
Sequential Formation

ABSTRACTThis study focuses on the sequential formation of aluminide phases during annealing of titanium and aluminum thin film bilayers. The formation of titanium-rich intermetallic phases at higher annealing temperatures is emphasized. Using Rutherford Backscattering Spectrometry (RBS) analysis, and x-ray diffraction, phases formed as a function of temperature have been identified. The phases Al3Ti through Ti3Al were observed over the temperature range 450–750°C, where reaction with the SiO2 substrate occurred. All phases were present as discreet layers within the samples with several layered phases coexisting at the higher temperatures.

Temperature-dependent residual stresses in a hetero-epitaxial thin film system

2015 ◽  
Vol 584 ◽  
pp. 186-191 ◽  
Author(s):  
M. Liu ◽  
H.H. Ruan ◽  
L.C. Zhang ◽  
A. Moridi
Keyword(s):  
Thin Film ◽  
Residual Stresses ◽  
Film System ◽  
Temperature Dependent ◽  
Epitaxial Thin Film ◽  
Thin Film System

scholarly journals Direct Demonstration of the Emergent Magnetism Resulting from the Multivalence Mn in a LaMnO3 Epitaxial Thin Film System

2018 ◽  
Vol 4 (6) ◽  
pp. 1800055 ◽  
Author(s):  
Wei Niu ◽  
Wenqing Liu ◽  
Min Gu ◽  
Yongda Chen ◽  
Xiaoqian Zhang ◽  
...  
Keyword(s):  
Thin Film ◽  
Film System ◽  
Epitaxial Thin Film ◽  
Thin Film System ◽  
Direct Demonstration

Silicidation in Ni/Si thin film system investigated by X-ray diffraction and Auger electron spectroscopy

2007 ◽  
Vol 253 (8) ◽  
pp. 3799-3802 ◽  
Author(s):  
S. Abhaya ◽  
G. Amarendra ◽  
S. Kalavathi ◽  
Padma Gopalan ◽  
M. Kamruddin ◽  
...  
Keyword(s):  
Thin Film ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Film System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thin Film System ◽  
Si Thin Film
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