{224} Plane X-Ray Diffraction Study of GaAs on Si Wafers Using a Conventional Double Crystal Diffractometer

1987 ◽  
Vol 91 ◽  
Author(s):  
J.W. Lee ◽  
D.K. Bowen ◽  
J.P. Salerno
Keyword(s):  
Incident Angle ◽  
Wafer Surface ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Near Surface ◽  
Rocking Curve ◽  
X Ray ◽  
Gaas On Si ◽  
Plane Diffraction

ABSTRACTIn an effort to evaluate the near surface crystal quality of GaAs on Si wafers, {224} plane diffraction were investigated using a conventional double crystal x-ray diffractometer without any high intensity radiation source. The x-ray incident angle to wafer surface varied from 3.6 to 9.6 degrees for different {224} planes due to the substrate tilt angle of 3 degrees. The GaAs to Si rocking curve intensity ratio increased significantly as the incident angle decreased. For the diffraction with 3.6 degree incident angle, only the GaAs peak was detected from the 3.5 um thick GaAs on Si wafer and the GaAs peak became narrower. These indicates that this conventional x-ray diffraction technique is applicable for the near surface quality evaluation of GaAs on Si wafers.

CdTe Films Grown on InSb Substrates by Organometallic Epitaxy

1986 ◽  
Vol 90 ◽  
Author(s):  
I. B. Bhat ◽  
N. R. Taskar ◽  
J. Ayers ◽  
K. Patel ◽  
S. K. Ghandhi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Organometallic Vapor Phase Epitaxy ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Cdte Films ◽  
Secondary Ion ◽  
Cdte Growth

ABSTRACTCadmium telluride layers were grown on InSb substrates by organometallic vapor phase epitaxy and examined using secondary ion mass spectrometry (SIMS), photoluminescence (Pb) and double crystal x-ray diffraction (DCD). The substrate temperature and the nature of the surface prior to growth are shown to be the most important parameters which influence the quality of CdTe layers. Growth on diethyltelluride (DETe) stabilized InSb substrates resulted in CdTe growth with a misorientation of about 4 minutes of arc with respect to the substrates. On the other hand, the grown layers followed the orientation of the substrates when a dimethylcadmium (DMCd) stabilized InSb was used. Growth at 350°C resulted in the smallest x-ray rocking curve (DCRC) full width at half maximum (FWHM) of about 20 arc seconds.

TEM Study of the Morphology Of GaN/SiC (0001) Grown at Various Temperatures by MBE

1999 ◽  
Vol 595 ◽  
Author(s):  
W.L. Sarney ◽  
L. Salamanca-Riba ◽  
V. Ramachandran ◽  
R.M Feenstra ◽  
D.W. Greve
Keyword(s):  
Low Temperatures ◽  
Stacking Faults ◽  
Full Width ◽  
X Ray Diffraction ◽  
High Quality ◽  
Double Crystal ◽  
Tem Analysis ◽  
Rocking Curve ◽  
X Ray ◽  
Substrate Temperatures

AbstractGaN films grown on SiC (0001) by MBE at various substrate temperatures (600° - 750° C) were characterized by RHEED, STM, x-ray diffraction, AFM and TEM. This work focuses on the TEM analysis of the films' features, such as stacking faults and dislocations, which are related to the substrate temperature. There are several basal plane stacking faults in the form of cubic inclusions for samples grown at low temperatures compared to those grown at high temperatures. The dislocation density is greatest for the film grown at 600°C, and it steadily decreases with increasing growth temperatures. Despite the presence of various defects, x-ray analysis shows that the GaN films are of high quality. The double crystal rocking curve full width at half maximum (FWHM) for the GaN (0002) peak is less than 2 arc-minutes for all of the films we measured and it decreases with increasing growth temperature.

High Resolution Digital X-Ray Rocking Curve Topography

1986 ◽  
Vol 30 ◽  
pp. 527-535 ◽  
Author(s):  
T.S. Ananthanarayanan ◽  
W.E. Mayo ◽  
R.G. Rosemeier
Keyword(s):  
Defect Structure ◽  
Semiconductor Device ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
Crystalline Materials ◽  
Digital Implementation ◽  
X Ray ◽  
Rapid Characterization ◽  
Non Destructive

AbstractThis study presents a unique and novel enhancement of the double crystal diffractometer which allows topographic mapping of X-ray diffraction rocking curve half widths at about 100-150μm spatial resolution. This technique can be very effectively utilized to map micro-lattice strain fields in crystalline materials. The current focus will be on the application of a recently developed digital implementation for the rapid characterization of defect structure and distribution in various semiconductor materials.Digital Automated Rocking Curve (DARC) topography has been successfully applied for characterizing defect structure in materials such as: GaAs, Si, AlGaAs, HgMnTe, HgCdTe, CdTe, Al, Inconnel, Steels, BaF2 PbS, PbSe, etc. The non-intrusive (non- contact & non-destructive) nature of the DARC technique allows its use in studing several phenomena such as corrosion fatigue, recrystallization, grain growth, etc., in situ. DARC topography has been used for isolating regions of non-uniform dislocation density on various materials. It is envisioned that this highly sophisticated, yet simple to operate, system will improve semiconductor-device yield significantly.The high strain sensitivity of the technique results from combination of the highly monochromated and collimated X-ray probe beani, the State of the art linear position-sensitive detector (LPSD) and the high-precision specimen goniometer.

X-Ray Rocking Curve Analysis of S-Implanted GaAs

1988 ◽  
Vol 126 ◽  
Author(s):  
M. Fatemi ◽  
P.E. Thompson ◽  
J. Chaudhuri ◽  
S. Shah
Keyword(s):  
Thin Film ◽  
Curve Analysis ◽  
Maximum Strain ◽  
Major Peak ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Rocking Curve ◽  
X Ray ◽  
Positive Strain ◽  
Two Peaks

ABSTRACTThe effect of rapid thermal annealing on strain reduction in 1.15 MeV S-implanted GaAs wafers irradiated to a dose of 5 × 1014/cm2 has been studied by double-crystal x-ray diffraction technique. X-ray rocking curves exhibit characteristic thin film fringes between the peak of unstrained GaAs and the major peak of the strained region. The maximum strain, i.e., the separation between the two peaks, as well as the number of minor fringes decreases with increasing RTA temperature, while the relative spacing between the fringes remains constant. At temperatures above 900°C, the main peaks begin to overlap; however, a residual positive strain can be measured for temperatures as high as 1100°C.

Investigation on quality of cubic GaN/GaAs(100) by double-crystal X-ray diffraction

1999 ◽  
Vol 42 (5) ◽  
pp. 517-522
Author(s):  
Dapeng Xu ◽  
Rutian Wang ◽  
Hui Yang ◽  
Lianxi Zheng ◽  
Jianbin Li ◽  
...  
Keyword(s):  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Cubic Gan

Study of Depth-Dependent Tetragonal Distortion of GaN Epilayer with Tri-Layer AlGaN Interlayer Growth on Si(111)

2011 ◽  
Vol 413 ◽  
pp. 11-17 ◽  
Author(s):  
Bin Feng Ding ◽  
Yong Quan Chai
Keyword(s):  
Chemical Vapor ◽  
Crystal Quality ◽  
Tetragonal Distortion ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Near Surface ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

A GaN epilayer with tri-layer AlGaN interlayer grown on Si (111) by metal-organic chemical vapor deposition (MOCVD) method was discussed by synchrotron radiation x-ray diffraction (SRXRD) and Rutherford backscattering (RBS)/C. The crystal quality of the epilayer is very good with a χmin=2.1%. According to the results of the θ-2θ scan of GaN(0002) and GaN(1122), the epilayer elastic strains in perpendicular and parallel directions were calculated respectively to be-0.019% and 0.063%. By the angular scan using RBS/C around a symmetric [0001] axis and an asymmetric [1213] axis in the (1010) plane of the GaN layer, the tetragonal distortion (eT ) were determined to be 0.09%. This result coincides with that from SRXRD perfectly. The strain decreases gradually towards the near-surface layer, which will avoid the film cracks efficiently and improve the crystal quality of the GaN epilayer remarkably.

Measurement of the Lateral Periodicity of a Quantum Dot Array by Triple Crystal Diffractometry

1993 ◽  
Vol 312 ◽  
Author(s):  
B. Jenichen ◽  
K. Ploog ◽  
O. Brandt
Keyword(s):  
Quantum Dot ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Inas Quantum Dots ◽  
Rocking Curve ◽  
X Ray ◽  
Gaas Matrix ◽  
Scattering Factor ◽  
Inas Quantum Dot ◽  
Kinematical Theory

AbstractThe lateral periodicity of an InAs quantum dot array in a GaAs matrix is measured in the differential rocking curve by triple crystal diffractometry. The quantum dot array was grown by molecular beam epitaxy of submonolayer InAs films on a terraced (001) GaAs substrate. The x-ray diffraction of the array is described in the limits of the kinematical theory. Both the changes in the scattering factor and the tetragonal deformations due to the InAs quantum dots are taken into account. The lateral periodicity of the array along [100] is 8–11nm dependent on the position of the measured region compared with an average of 10nm obtained from the miscut of the sample. In addition the vertical periodicity of the array is measured by comparison of the double crystal rocking curve with the corresponding simulation in the dynamical approximation. The vertical period of the array along [001] is 26.5nm. The coverage of the submonolayer InAs films estimated from the same measurement is 0.4. The absence of plastic relaxation is confirmed by x-ray topography.

Analysis of Surface Layers and Thin Films by Low Incident Angle X-Ray Diffraction

1986 ◽  
Vol 30 ◽  
pp. 457-464 ◽  
Author(s):  
S. S. Iyengar ◽  
M. W. Santana ◽  
H. Windischmann ◽  
P. Engler
Keyword(s):  
Thin Films ◽  
Incident Angle ◽  
Grazing Incidence ◽  
Electronics Industry ◽  
Solid Surfaces ◽  
X Ray Diffraction ◽  
Surface Layers ◽  
Double Crystal ◽  
X Ray ◽  
Grazing Incidence Diffraction

Due to the current high interest in characterizing epitaxially deposited thin films required by the electronics industry as well as the increased attention in elucidating reactions between solid surfaces and the environment (e.g., corrosion), investigators have increased their efforts in developing X-ray procedures for analyzing films and surfaces less than 2 μm thick. For example, an entire session of the 1985 Denver Conference on Applications of X-ray Analysis was devoted to this subject and an excellent review of X-ray diffraction techniques for characterizing thin films was recently published by Segmuller (1). Specific techniques include grazing incidence diffraction (2, 3), double crystal diffraction (3), and the use of the Seemann-Bohlin focusing geometry (4, 5).

Studies of Crystalunity for Sputter Deposited Bi-Based Oxide Films

1992 ◽  
Vol 275 ◽  
Author(s):  
Koichi Mizuno ◽  
Yo Ichikawa ◽  
Kentaro Setsune
Keyword(s):  
Thin Films ◽  
Oxide Films ◽  
Full Width ◽  
Half Maximum ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Ion Channeling ◽  
Sputter Deposited

ABSTRACTCrystalline quality of Bi-based oxide films has been evaluated by means of X-ray diffraction (XRD) and ion-channeling on the Rutherford backscattering (RBS). The films were sputter deposited 2201-phase Bi2Sr2Cu1O8-δ (BSCO) and 2212-phase Bi2Sr2Ca1Cu2O8-δ (BSCCO). They were prepared on MgO(100) and SrTiO3(100) substrates at the low temperature of 650°C during the deposition. The best quality, however thin films had poor crystallinity compared to single crystals, was obtained with the 2201-phase BSCO film that was deposited on a SrTiO3(100) substrate. The full width at half maximum (FWHM) value of the rocking curve on XRD for the film was estimated as 1560 (arc sec).

High Quality GaP Growth on Si Substrates By Mocvd

1988 ◽  
Vol 116 ◽  
Author(s):  
K. Uchida ◽  
Y. Kohama ◽  
M. Tajima ◽  
T. Soga ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
Diffraction Peak ◽  
Crystal Quality ◽  
X Ray Diffraction ◽  
High Quality ◽  
Double Crystal ◽  
X Ray ◽  
Si Substrates ◽  
Secondary Ion

AbstractGaP crystals are grown on Si substrates by MOCVD. Double crystal X-ray diffraction indicates that the crystal quality of GaP layers greatly improves when AsH3 is supplied before growth. The FWHM of (400) diffraction peak of the GaP layer decreases as the thickness increases and the best FWHM of 112.5 arcs is obtained at a thickness of 5 μm. The GaP/Si interface is characterized using secondary ion mass spectroscopy (SIMS) to demonstrate the effect of AsH3.

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