Depth profiling by Xrf with Variable Beam Geometry Applied to Thin Films in the Nanometer Region

1995 ◽  
Vol 39 ◽  
pp. 675-682
Author(s):  
Horst Ebel ◽  
Robert Svagera ◽  
Robert Hobl ◽  
Werner Kugler ◽  
Hung Danh Nguyen
Keyword(s):  
Chemical Element ◽  
Depth Profiling ◽  
Theoretical Background ◽  
Thin Layers ◽  
Fundamental Parameters ◽  
Beam Geometry ◽  
Linear Approach ◽  
Measured Characteristic ◽  
Thin Layer Approximation ◽  
Empirical Coefficients

Standard applications of quantitative XRF are determinations of composition of bulk specimens, composition and thickness of thin multielement layers and thickness of thin element layers. The theoretical background was given by Sherman, and Shiraiwa and Fujino Numerous approaches like empirical coefficients and fundamental parameters were developed and deliver valuable results. Extending the methods to a quantification of very thin layers consisting of more than one chemical element, it becomes more and more complicated to split the solutions into thickness and composition. The explanation is given by the improving validity of the linear approach for the measured signals in dependence on thickness and composition due to the thin layer approximation exp(x)≈l+x. This leads finally to the finding that measured characteristic signals are proportional to the product c-t, where c represents the concentration of the chemical element under investigation and t the thickness of the layer.

scholarly journals Tailoring the supercapacitive performances of noble metal oxides, porous carbons and their composites

2013 ◽  
Vol 78 (12) ◽  
pp. 2141-2164 ◽  
Author(s):  
Vladimir Panic ◽  
Aleksandar Dekanski ◽  
Branislav Nikolic
Keyword(s):  
Energy Storage ◽  
Metal Oxides ◽  
Noble Metal ◽  
Electrochemical Impedance ◽  
Depth Profiling ◽  
Thin Layers ◽  
Energy Storage Devices ◽  
Capacitive Energy Storage ◽  
Storage Devices ◽  
Noble Metal Oxides

Porous electrochemical supercapacitive materials, as an important type of new-generation energy storage devices, require a detailed analysis and knowledge of their capacitive performances upon different charging/discharging regimes. The investigation of the responses to dynamic perturbations of typical representatives, noble metal oxides, carbonaceous materials and RuO2-impregnated carbon blacks, by electrochemical impedance spectroscopy (EIS) is presented. This presentation follows a brief description of supercapacitive behavior and origin of pseudocapacitive response of noble metal oxides. For all investigated materials, the electrical charging/discharging equivalent of the EIS response was found to obey the transmission line model envisaged as so-called ?resistor/capacitor (RC) ladder?. The ladder features are correlated to material physicochemical properties, its composition and the composition of the electrolyte. Fitting of the EIS data of different supercapacitive materials to appropriate RC ladders enables the in-depth profiling of the capacitance and pore resistance of their porous thin-layers and finally the complete revelation of capacitive energy storage issues.

Physico-chemical Characterization of Thin Oxide Films: Difficulties and Solutions

2008 ◽  
Vol 1073 ◽  
Author(s):  
Thierry Conard ◽  
Wilfried Vandervorst
Keyword(s):  
Substrate Surface ◽  
Depth Profiling ◽  
Chemical Characterization ◽  
Surface Preparation ◽  
High Energy ◽  
Thin Layers ◽  
Back Side ◽  
Gate Stack ◽  
Metal Gates

ABSTRACTOxides have always been an integral part of semiconductor manufacturing both in front and back-end processing. With the necessary increase in performance, the demand on these oxides has been increasing leading to their (future) replacement by more complex materials, such as high-k's in gate oxide and metal gates. With the increasing material complexity, a thorough characterization of all aspects of these materials is necessary, covering, for instance, surfaces and interfaces, nucleation, growth, atomic structure, …This article focuses on the characterization of front-end oxides and their interfaces. It shows that detailed information can be achieved by sophisticated experimental techniques such as synchrotron radiation, high energy ERD or AtomProbe but that adequate sample preparation and/or analysis by a combination of more routinely available techniques may achieve similar results. This is shown through the study of three different systems/problems in the gate stack analysis. We will first focus on the determination of substrate surface preparation conditions before deposition and their influence on growth mode and the growth characteristics by different growth techniques (ALD, MOCVD, …). Second, we present the possibilities of compositional depth profiling of thin layers both with nuclear techniques and Angle-Resolved XPS. Finally, we will show that using conventional XPS and a combination of front and back-side analysis, the interface between high-k oxide and metal gates can be investigated. More examples of gate stack characterization can be found elsewhere

Low energy ion scattering as a depth profiling tool for thin layers - Case of bromine methanol etched CdTe

Vacuum ◽  
2018 ◽  
Vol 152 ◽  
pp. 138-144
Author(s):  
Ondřej Šik ◽  
Petr Bábor ◽  
Josef Polčák ◽  
Eduard Belas ◽  
Pavel Moravec ◽  
...  
Keyword(s):  
Depth Profiling ◽  
Thin Layers ◽  
Low Energy ◽  
Ion Scattering ◽  
Low Energy Ion Scattering

Depth profiling of nanometer thin layers by laser desorption and laser postionization time-of-flight mass spectrometry

2017 ◽  
Vol 32 (10) ◽  
pp. 1878-1884 ◽  
Author(s):  
Zhibin Yin ◽  
Xiaoling Cheng ◽  
Rong Liu ◽  
Wei Hang ◽  
Benli Huang
Keyword(s):  
Mass Spectrometry ◽  
Mass Spectrometer ◽  
Time Of Flight ◽  
Depth Profiling ◽  
Laser Desorption ◽  
Thin Layers ◽  
Flight Mass Spectrometer ◽  
Flight Mass Spectrometry

A laser desorption and laser postionization time-of-flight mass spectrometer was employed for the depth profiling of nanometer thin-layers.

Quantitative SIMS depth profiling of Al in AlGaN/AlN/GaN HEMT structures with nanometer-thin layers

2016 ◽  
Vol 49 (2) ◽  
pp. 117-121 ◽  
Author(s):  
P.A. Yunin ◽  
Yu.N. Drozdov ◽  
M.N. Drozdov ◽  
O.I. Khrykin ◽  
V.I. Shashkin
Keyword(s):  
Depth Profiling ◽  
Thin Layers ◽  
Gan Hemt ◽  
Quantitative Sims ◽  
Sims Depth Profiling

Depth Profiling by Xrf With Variable Beam Geometry Applied to Thin Films in the Nanometer Region

1997 ◽  
pp. 675-682
Author(s):  
Horst Ebel ◽  
Robert Svagera ◽  
Robert Hobl ◽  
Werner Kugler ◽  
Hung Danh Nguyen
Keyword(s):  
Thin Films ◽  
Depth Profiling ◽  
Beam Geometry

Semiconductor Inter-Material Analysis Using an FIB Sample Preparation Method and Auger Depth Profiling

2004 ◽  
Author(s):  
Randal Mulder ◽  
Swaminathan Subramanian ◽  
Tony Chrastecky ◽  
Paul Laberge ◽  
Cliff Howard
Keyword(s):  
Sample Preparation ◽  
Preparation Method ◽  
Semiconductor Devices ◽  
Depth Profiling ◽  
Thin Layers ◽  
Foreign Material ◽  
Oxide Interface ◽  
Sample Preparation Method ◽  
Target Layer ◽  
Foreign Materials

Abstract The identification of foreign material at metal-oxide interface or at the poly-substrate interface by means energy dispersive spectroscopy (EDS) is very difficult. Auger depth profiling can be used as an alternative method to cross-section EDS analysis for the identification of very thin layers of foreign material in semiconductor devices. This article presents a sample preparation method adapted from a planar transmission electron microscopy sample preparation method so that Auger depth profiling can be used as a practical tool for identifying very thin layers of foreign materials at interfaces buried deep within semiconductor devices. The discussion covers the advantages, applications, and the procedure for performing the analysis. The high degree of control provided by the method gives an analyst the ability to easily thin down material layers to less than 100nm of a target layer, thereby significantly reducing sample preparation time as well as analysis time on the Auger tool.

scholarly journals In Vivo Skin Characterizations by Using Opto-Thermal Depth-Resolved Detection Spectra

Cosmetics ◽  
2019 ◽  
Vol 6 (3) ◽  
pp. 54
Author(s):  
Xu Zhang ◽  
Christos Bontozoglou ◽  
Perry Xiao
Keyword(s):  
Depth Profiling ◽  
Theoretical Background ◽  
Non Invasive ◽  
Remote Sensing Technology ◽  
Sensing Technology ◽  
Infrared Remote Sensing ◽  
Different Types ◽  
Thermal Detection ◽  
Thermal Transient

OTTER (opto-thermal transient emission radiometry) is an infrared remote sensing technology that has been extensively used in skin measurements. It is non-contact, non-invasive, and has a unique depth profiling capability. By selecting different detection wavelengths, OTTER can be used for different types of skin measurements, such as skin hydration measurements and skin topically applied substance measurements, etc. By plotting the results at different detection wavelengths, we can have an opto-thermal detection spectrum. Combining with OTTER’s unique depth profiling capability, we can get a depth-resolved opto-thermal detection spectrum. This is a powerful tool that can be used for many skin studies. Here we will present our latest study with details on the apparatus setup, theoretical background, as well as experimental results.

Sign in / Sign up

Export Citation Format

Share Document