Quadrilateral Finite Element Monte Carlo Simulation of Complex Shape Compound FETs

The complex recess and gate shape of modem compound FETs greatly affect the device parasitics and therefore impose the need for proper description of the device geometry and surface conditions in any practical device simulations. In this paper we describe a new Monte Carlo (MC) module incorporated in our Heterojunction 2D Finite element FET simulator H2F [1]. The module combines realistic quadrilateral finite-element description of the device geometry with realistic particle simulation of the non-equilibrium hot carrier transport in short recess gate compound FETs. A Single Programme Multiple Data (SPMD) parallel approach makes it possible to use our MC simulator for practical design work, generating the necessary I-V characteristics in parallel. The capabilities of the finite element MC module are illustrated in example simulations of a 200nm pseudomorphic HEMT fabricated in the Nanoelectronics Research Centre of Glasgow University.

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Monte Carlo simulation of hot carrier transport in III-N LEDs

Journal of Computational Electronics ◽

10.1007/s10825-015-0687-z ◽

2015 ◽

Vol 14 (2) ◽

pp. 382-397 ◽

Cited By ~ 16

Author(s):

Pyry Kivisaari ◽

Jani Oksanen ◽

Jukka Tulkki ◽

Toufik Sadi

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Carrier Transport ◽

Hot Carrier

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Monte Carlo Particle Simulation for Electrical and Thermal Analysis of a MESFET using the Finite-Element Approach

2019 IEEE MTT-S International Conference on Numerical Electromagnetic and Multiphysics Modeling and Optimization (NEMO) ◽

10.1109/nemo.2019.8853747 ◽

2019 ◽

Cited By ~ 1

Author(s):

Ze Sun ◽

Nicholas Erickson ◽

Jingdong Sun ◽

Ryan From ◽

Jun Fan

Keyword(s):

Thermal Analysis ◽

Finite Element ◽

Monte Carlo ◽

Particle Simulation ◽

Finite Element Approach ◽

Element Approach ◽

Monte Carlo Particle Simulation

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Monte Carlo Simulation of Boundary Scattering Effects for Power MOSFET Performance

Electronic and Photonic Packaging, Electrical Systems and Photonic Design, and Nanotechnology ◽

10.1115/imece2003-43743 ◽

2003 ◽

Author(s):

A. Marathe ◽

D. G. Walker

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

Carrier Transport ◽

Hot Carriers ◽

Power Mosfets ◽

Hot Carrier ◽

Microelectronic Devices ◽

Interface Scattering ◽

Scattering Effects ◽

Hot Carrier Effects

Miniaturization of microelectronic devices has lead to many new issues not seen in larger structures, such as hot carrier effects and interfacial effects. In power MOSFETs, degradation of the transconductance can occur over the lifetime of a device. This decrease in performance is a result of hot carriers in the channel region scattering at a Si/SiO2 interface that has been passivated with hydrogen. Eventually hot carriers liberate the hydrogen, leaving silicon bonds with an entirely different scattering cross section. The current work presents a Monte Carlo simulation of carrier transport in silicon near an interface. Scattering parameters at the interface are parameterized and studied. It was found that electron mobility, which is proportional to transconductance, is a function of the energy loss rate and type of scattering at the interface. Results indicate that dangling bonds and H-Si bonds can be characterized by different scattering mechanisms.

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Complete RF Analysis of Compound FETs Based on Transient Monte Carlo Simulation

VLSI Design ◽

10.1155/1998/26067 ◽

1998 ◽

Vol 8 (1-4) ◽

pp. 313-317

Author(s):

S. Babiker ◽

A. Asenov ◽

N. Cameron ◽

S. P. Beaumont ◽

J. R. Barker

Keyword(s):

Monte Carlo Simulation ◽

Finite Element ◽

Monte Carlo ◽

Time Domain ◽

Device Design ◽

Post Processing ◽

Processing Stage ◽

Ensemble Monte Carlo ◽

Device Geometry ◽

Rf Performance

In this paper we described a complete methodology to extract the RF performance of ‘real’ compound FETs from time domain Ensemble Monte-Carlo (EMC) simulations which can be used for practical device design. The methodology is based on transient finite element EMC simulation of realistic device geometry. The extraction of the terminal current is based on the Ramo-Shockley theorem. Parasitic elements like the gate and contact resistances are included in the RF analysis at the post-processing stage. Example of the RF analysis of pseudomorphic HEMTs illustrates our approach.

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