scholarly journals Effect of Etching Time on Optical and Thermal Properties of p-Type Porous Silicon Prepared by Electrical Anodisation Method

2012 ◽  
Vol 2012 ◽  
pp. 1-9 ◽  
Author(s):  
Kasra Behzad ◽  
Wan Mahmood Mat Yunus ◽  
Zainal Abidin Talib ◽  
Azmi Zakaria ◽  
Afarin Bahrami ◽  
...  
Keyword(s):  
Thermal Properties ◽  
Thermal Diffusivity ◽  
Porous Silicon ◽  
Band Gap ◽  
Photoacoustic Spectroscopy ◽  
Gravimetric Method ◽  
Etching Time ◽  
Silicon Substrates ◽  
P Type ◽  
Si Wafer

The porous silicon (PSi) layers were formed on p-type silicon (Si) wafer. The six samples were anodised electrically with 30 mA/cm2 fixed current density for different etching times. The structural, optical, and thermal properties of porous silicon on silicon substrates were investigated by photoluminescence (PL), photoacoustic spectroscopy (PAS), and UV-Vis-NIR spectrophotometer. The thickness and porosity of the layers were measured using the gravimetric method. The band gap of the samples was measured through the photoluminescence (PL) peak and absorption spectra, then they were compared. It shows that band gap value increases by raising the porosity. Photoacoustic spectroscopy (PAS) was carried out for measuring the thermal diffusivity (TD) of the samples.

scholarly journals Effect of current density and etching time on photoluminescence and energy band gap of p-type porous silicon

2016 ◽  
Vol 48 (3) ◽  
Author(s):  
Mohammed Jabbar Hussein ◽  
W. Mahmood Mat Yunus ◽  
Halimah Mohamed Kamari ◽  
Azmi Zakaria ◽  
Hind Fadhil Oleiw
Keyword(s):  
Porous Silicon ◽  
Band Gap ◽  
Current Density ◽  
Energy Band ◽  
Etching Time ◽  
Energy Band Gap ◽  
P Type

EFFECT OF ETCHING TIME ON OPTICAL AND MORPHOLOGICAL FEATURES OF N-TYPE POROUS SILICON PREPARED BY PHOTO-ELECTROCHEMICAL METHOD

2016 ◽  
Vol 78 (3) ◽  
Author(s):  
Asad A. Thahe ◽  
Noriah Bidin ◽  
Mohammed A. Al-Azawi ◽  
Naser M. Ahmed
Keyword(s):  
Porous Silicon ◽  
Gravimetric Method ◽  
Constant Current ◽  
Etching Time ◽  
Absorption Data ◽  
Time Duration ◽  
Constant Current Density ◽  
Force Microscopy ◽  
Atomic Force ◽  
Structure Properties

Achieving efficient visible photoluminescence from porous-silicon (PSi) is demanding for optoelectronic and solar cells applications. Improving the absorption and emission features of PSi is challenging. Photo-electro-chemical etching assisted formation of PSi layers on n-type (111) silicon (Si) wafers is reported. Samples are prepared at constant current density (~30 mA/cm2) under varying etching times of 10, 15, 20, 25, and 30 min. The influence of etching time duration on the growth morphology and spectral properties are inspected. Room temperature photoluminescence (PL) measurement is performed to determine the optical properties of as-synthesized samples. Sample morphologies are imaged via Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The thickness and porosity of the prepared samples are estimated using the gravimetric method. The emission and absorption data is further used to determine the samples band gap and electronic structure properties. Results and analyzed, interpreted with different mechanisms and compared.  

Electroluminescence and Photoluminescence Properties of Porous Silicon Nanostructures with Optimum Current Density of Photo-Electrochemical Anodisation

2013 ◽  
Vol 667 ◽  
pp. 180-185
Author(s):  
M. Ain Zubaidah ◽  
F.S. Husairi ◽  
S.F.M. Yusop ◽  
Noor Asli Asnida ◽  
Mohamad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Volume Ratio ◽  
Boron Doping ◽  
Peak Position ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Photoluminescence Properties ◽  
Current Densities ◽  
Pl Spectrum ◽  
P Type

P-type silicon wafer ( orientation; boron doping; 0.75 ~ 10 Ω cm-1) was used to prepare samples of porous silicon nanostructures (PSiNs). All samples have been prepared by using photo-electrochemical anodisation. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm2), sample B (J=20 mA/cm2), sample C (J=30 mA/cm2), sample D (J=40 mA/cm2) and sample E (J=50 mA/cm2). Photoluminescence (PL) and electroluminescence (EL) spectra were investigated. Maximum peak position of PL spectrum at about ~675 nm, while the maximum EL spectrum at about ~650 nm (which is similar to the PL spectrum).

Effect of etching time on structure of p-type porous silicon

2018 ◽  
Vol 461 ◽  
pp. 44-47 ◽  
Author(s):  
Martin Kopani ◽  
Milan Mikula ◽  
Daniel Kosnac ◽  
Pavol Vojtek ◽  
Jan Gregus ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Etching Time ◽  
P Type

Influence of Etching Time on Surface Structural Properties of p- and n- Type Porous Silicon Nanostructures by Photo-Electrochemical Anodic Etching

2012 ◽  
Vol 576 ◽  
pp. 511-515
Author(s):  
N.A. Asli ◽  
Maslihan Ain Zubaidah ◽  
S.F.M. Yusop ◽  
Khairunnadim Ahmad Sekak ◽  
Mohammad Rusop ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Crystalline Silicon ◽  
Surface Characteristic ◽  
Electrochemical Anodization ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Force Microscopy ◽  
Etching Parameters ◽  
P Type ◽  
Substrate Doping

Porous silicon nanostructures (PSiN) are nanoporous materials which consist of uniform network of interconnected pore. The structure of PSiN is depending on etching parameters, including current density, HF electrolyte concentration, substrate doping type and level. In this work, the results of a structural p-type and n-type of porous silicon nanostructures were investigated by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) is reported. Samples were prepared by photo-electrochemical anodization of p- and n-type crystalline silicon in HF electrolyte at different etching time. The surface morphology of PSiN was studied by FESEM with same magnification shown n-type surface form crack faster than p-type of PSiN. While the topography and roughness of PSiN was characterize by AFM. From topography shown the different etching time for both type PSiN produce different porosity and roughness respectively. There is good agreement between p- and n-type have different in terms of surface characteristic.

scholarly journals Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

ISRN Optics ◽  
2012 ◽  
Vol 2012 ◽  
pp. 1-6 ◽  
Author(s):  
Igor Iatsunskyi ◽  
Valentin Smyntyna ◽  
Nykolai Pavlenko ◽  
Olga Sviridova
Keyword(s):  
Porous Silicon ◽  
Chemical Etching ◽  
Etching Time ◽  
Force Microscopy ◽  
Porous Layers ◽  
Atomic Force ◽  
Silicon Nanostructure ◽  
Metal Assisted Chemical Etching ◽  
Concentrated Solution ◽  
P Type

Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H2O2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro- or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF2 on a silicon surface.

ESR Study of Porous Silicon

1992 ◽  
Vol 283 ◽  
Author(s):  
W. Y. Cheung ◽  
S. P. Wong ◽  
I. H. Wilson ◽  
C. F. Kan ◽  
S. K. Hark
Keyword(s):  
Porous Silicon ◽  
Spin Density ◽  
Light Emission ◽  
Blue Shift ◽  
Esr Spectra ◽  
Peak Position ◽  
Silicon Substrates ◽  
Post Annealing ◽  
G Value ◽  
P Type

ABSTRACTA detailed ESR study has been performed on porous silicon on both <100> and <111> p-type silicon substrates prepared using anodization in HF under a range of conditions and the results are correlated with the light emission properties. It is found that the ESR spectra are dependent upon the orientation of the samples. The ESR defect centers are identified to be the Pb centers or Pbo centers of the Si-SiO2 system from the g-value anisotropy maps. The variation of the spin density Ns with annealing conditions has also been studied for samples annealed either in nitrogen or oxygen ambient at 200°C for various time intervals. It is concluded that the increase or decrease of Ns are due to the generation or elimination of the Pb or Pbo centers in conjunction with the oxidation process during annealing. From PL study of these samples, it is found that there is no simple correlation between the spin density and the PL intensity. However, a blue shift in the PL peak position was observed both in samples after a post-annealing etch in HF solution, and in samples annealed in oxygen without a post-annealing etch. This blue shift supports the quantum confinement model of light emission from porous silicon.

Effect of Electrolyte Volume Ratio on Electroluminescence of Porous Silicon Nanostructures (PSiNs) Intensity

2013 ◽  
Vol 686 ◽  
pp. 49-55
Author(s):  
M. Ain Zubaidah ◽  
N.A. Asli ◽  
Mohamad Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Porous Silicon ◽  
Light Emission ◽  
Light Emitting Diode ◽  
Volume Ratio ◽  
Visible Range ◽  
Silicon Nanostructures ◽  
Etching Time ◽  
Light Emitting ◽  
Flat Screen ◽  
P Type

For this experiment, the main purpose of this experiment is to determine the electroluminescence of PSiNs samples with optimum electrolyte volume ratio of photo-electrochemical anodisation. PSiNs samples were prepared by photo-electrochemical anodisation by using p-type silicon substrate. For the formation of PSiNs on the silicon surface, a fixed current density (J=20 mA/cm2) and 30 minutes etching time were applied for the various electrolyte volume ratio. Volume ratio of hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), HF48%:C2H5OH was used for sample A (3:1), sample B (2:1), sample C (1:1), sample D (1:2) and sample E (1:3). The light emission can be observed at visible range. The effective electroluminescence was observed for sample C. Porous silicon nanostructures light–emitting diode (PSiNs-LED) has high-potential device for future flat screen display and can be high in demand.

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