Effect of etching time on structure of p-type porous silicon

P-type silicon wafer ( orientation; boron doping; 0.75 ~ 10 Ω cm-1) was used to prepare samples of porous silicon nanostructures (PSiNs). All samples have been prepared by using photo-electrochemical anodisation. A fixed etching time of 30 minutes and volume ratio of electrolyte, hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), 1:1 were used for various current densities, J. There were sample A (J=10 mA/cm2), sample B (J=20 mA/cm2), sample C (J=30 mA/cm2), sample D (J=40 mA/cm2) and sample E (J=50 mA/cm2). Photoluminescence (PL) and electroluminescence (EL) spectra were investigated. Maximum peak position of PL spectrum at about ~675 nm, while the maximum EL spectrum at about ~650 nm (which is similar to the PL spectrum).

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Influence of Etching Time on Surface Structural Properties of p- and n- Type Porous Silicon Nanostructures by Photo-Electrochemical Anodic Etching

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.576.511 ◽

2012 ◽

Vol 576 ◽

pp. 511-515

Author(s):

N.A. Asli ◽

Maslihan Ain Zubaidah ◽

S.F.M. Yusop ◽

Khairunnadim Ahmad Sekak ◽

Mohammad Rusop ◽

...

Keyword(s):

Porous Silicon ◽

Crystalline Silicon ◽

Surface Characteristic ◽

Electrochemical Anodization ◽

Silicon Nanostructures ◽

Etching Time ◽

Force Microscopy ◽

Etching Parameters ◽

P Type ◽

Substrate Doping

Porous silicon nanostructures (PSiN) are nanoporous materials which consist of uniform network of interconnected pore. The structure of PSiN is depending on etching parameters, including current density, HF electrolyte concentration, substrate doping type and level. In this work, the results of a structural p-type and n-type of porous silicon nanostructures were investigated by Field Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) is reported. Samples were prepared by photo-electrochemical anodization of p- and n-type crystalline silicon in HF electrolyte at different etching time. The surface morphology of PSiN was studied by FESEM with same magnification shown n-type surface form crack faster than p-type of PSiN. While the topography and roughness of PSiN was characterize by AFM. From topography shown the different etching time for both type PSiN produce different porosity and roughness respectively. There is good agreement between p- and n-type have different in terms of surface characteristic.

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Peculiarities of Photoluminescence in Porous Silicon Prepared by Metal-Assisted Chemical Etching

ISRN Optics ◽

10.5402/2012/958412 ◽

2012 ◽

Vol 2012 ◽

pp. 1-6 ◽

Cited By ~ 4

Author(s):

Igor Iatsunskyi ◽

Valentin Smyntyna ◽

Nykolai Pavlenko ◽

Olga Sviridova

Keyword(s):

Porous Silicon ◽

Chemical Etching ◽

Etching Time ◽

Force Microscopy ◽

Porous Layers ◽

Atomic Force ◽

Silicon Nanostructure ◽

Metal Assisted Chemical Etching ◽

Concentrated Solution ◽

P Type

Photoluminescent (PL) porous layers were formed on p-type silicon by a metal-assisted chemical etching method using H2O2 as an oxidizing agent. Silver particles were deposited on the (100) Si surface prior to immersion in a solution of HF and H2O2. The morphology of the porous silicon (PS) layer formed by this method was investigated by atomic force microscopy (AFM). Depending on the metal-assisted chemical etching conditions, the macro- or microporous structures could be formed. Luminescence from metal-assisted chemically etched layers was measured. It was found that the PL intensity increases with increasing etching time. This behaviour is attributed to increase of the density of the silicon nanostructure. It was found the shift of PL peak to a green region with increasing of deposition time can be attributed to the change in porous morphology. Finally, the PL spectra of samples formed by high concentrated solution of AgNO3 showed two narrow peaks of emission at 520 and 550 nm. These peaks can be attributed to formation of AgF and AgF2 on a silicon surface.

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Effect of Electrolyte Volume Ratio on Electroluminescence of Porous Silicon Nanostructures (PSiNs) Intensity

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.686.49 ◽

2013 ◽

Vol 686 ◽

pp. 49-55

Author(s):

M. Ain Zubaidah ◽

N.A. Asli ◽

Mohamad Rusop ◽

Saifollah Abdullah

Keyword(s):

Porous Silicon ◽

Light Emission ◽

Light Emitting Diode ◽

Volume Ratio ◽

Visible Range ◽

Silicon Nanostructures ◽

Etching Time ◽

Light Emitting ◽

Flat Screen ◽

P Type

For this experiment, the main purpose of this experiment is to determine the electroluminescence of PSiNs samples with optimum electrolyte volume ratio of photo-electrochemical anodisation. PSiNs samples were prepared by photo-electrochemical anodisation by using p-type silicon substrate. For the formation of PSiNs on the silicon surface, a fixed current density (J=20 mA/cm2) and 30 minutes etching time were applied for the various electrolyte volume ratio. Volume ratio of hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), HF48%:C2H5OH was used for sample A (3:1), sample B (2:1), sample C (1:1), sample D (1:2) and sample E (1:3). The light emission can be observed at visible range. The effective electroluminescence was observed for sample C. Porous silicon nanostructures light–emitting diode (PSiNs-LED) has high-potential device for future flat screen display and can be high in demand.

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Optical Properties of Porous Silicon Solar Cells for Use in Transport

Communications - Scientific letters of the University of Zilina ◽

10.26552/com.c.2019.3.53-58 ◽

2019 ◽

Vol 21 (3) ◽

pp. 53-58

Author(s):

Martin Kralik ◽

Michaela Hola ◽

Stanislav Jurecka

Keyword(s):

Solar Cells ◽

Porous Silicon ◽

Spectral Reflectance ◽

High Efficiency ◽

Electrochemical Etching ◽

Electrical Potential ◽

Etching Time ◽

Si Substrate ◽

Etching Parameters ◽

P Type

Porous silicon (pSi) samples were prepared by electrochemical etching of p-type silicon (p-type Si) substrate. Three pSi samples with different parameters of electrochemical etching (electrical potential, etching time, etching current) were prepared and analyzed. We studied the influence of electrochemical etching parameters on spectral reflectance of pSi structure. A modification of interference pattern was observed due to changes of microstructure. We determined the thickness of pSi layers from spectral reflectance. Solar cells with a porous structure achieve high efficiency and long life. These solar cells are predestined for use in transport.

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Effect of Etching Time on Optical and Thermal Properties of p-Type Porous Silicon Prepared by Electrical Anodisation Method

Advances in Optical Technologies ◽

10.1155/2012/581743 ◽

2012 ◽

Vol 2012 ◽

pp. 1-9 ◽

Cited By ~ 9

Author(s):

Kasra Behzad ◽

Wan Mahmood Mat Yunus ◽

Zainal Abidin Talib ◽

Azmi Zakaria ◽

Afarin Bahrami ◽

...

Keyword(s):

Thermal Properties ◽

Thermal Diffusivity ◽

Porous Silicon ◽

Band Gap ◽

Photoacoustic Spectroscopy ◽

Gravimetric Method ◽

Etching Time ◽

Silicon Substrates ◽

P Type ◽

Si Wafer

The porous silicon (PSi) layers were formed on p-type silicon (Si) wafer. The six samples were anodised electrically with 30 mA/cm2 fixed current density for different etching times. The structural, optical, and thermal properties of porous silicon on silicon substrates were investigated by photoluminescence (PL), photoacoustic spectroscopy (PAS), and UV-Vis-NIR spectrophotometer. The thickness and porosity of the layers were measured using the gravimetric method. The band gap of the samples was measured through the photoluminescence (PL) peak and absorption spectra, then they were compared. It shows that band gap value increases by raising the porosity. Photoacoustic spectroscopy (PAS) was carried out for measuring the thermal diffusivity (TD) of the samples.

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Responsivity of porous silicon for blue visible light with high sensitivity

Iraqi Journal of Physics (IJP) ◽

10.30723/ijp.v16i37.81 ◽

2018 ◽

Vol 16 (37) ◽

pp. 98-107 ◽

Cited By ~ 1

Author(s):

Iftikhar M. Ali

Keyword(s):

Porous Silicon ◽

Blue Light ◽

Current Density ◽

Crystalline Silicon ◽

Electrochemical Etching ◽

Etching Time ◽

Light Illumination ◽

Average Pore ◽

Zero Bias ◽

P Type

In this work, porous silicon (PS) are fabricated using electrochemical etching (ECE) process for p-type crystalline silicon (c-Si) wafers of (100) orientation. The structural, morphological and electrical properties of PS synthesized at etching current density of (10, 20, 30) mA/cm2 at constant etching time 10 min are studied. From X-ray diffraction (XRD) measurement, the value of FWHM is in general decreases with increasing current density for p-type porous silicon (p-PS). Atomic force microscope (AFM) showed that for p-PS the average pore diameter decreases at 20 mA. Porous silicon which formed on silicon will be a junction so I-V characteristics have been studied in the dark to calculate ideality factor (n), and saturation current (Is) for these junctions. These junctions are used in photo sensors applications, where the photo sensors have been examined at blue light region. Sensitivity, rise and fall times have been calculated for this wavelength, the maximum value for sensitivity is (3797.6 %) at etching current density 10 mA/cm2 under blue light illumination at zero bias voltage.

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Morphological and Structural Properties of Porous Silicon (PSi)

International Letters of Chemistry Physics and Astronomy ◽

10.18052/www.scipress.com/ilcpa.81.11 ◽

2019 ◽

Vol 81 ◽

pp. 11-17 ◽

Cited By ~ 1

Author(s):

Ayad Jumaah Kadhim ◽

Muneer H. Jaduaa Alzubaidy ◽

Ahmed N. Abd

Keyword(s):

Renewable Energy ◽

Porous Silicon ◽

Structural Properties ◽

Electrochemical Method ◽

Etching Time ◽

Nanocrystalline Structures ◽

P Type ◽

And Control ◽

Production Conditions

This study includes the effect of the etching time on the morphology of the surfaces produced using the electrochemical method of silicon ( p-type), where it was found that the etching leads to increase the porosity layer of silicon. The production of nanocrystalline structures and control of their production conditions is the first step to control the properties of the devices. These are very important applications for the etching of renewable energy.

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Photoluminescence Properties of Porous Silicon Nanostructures (PSiNs) with Optimum Electrolyte Volume Ratio of Photo-Electrochemical Anodization

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.620.40 ◽

2012 ◽

Vol 620 ◽

pp. 40-44 ◽

Cited By ~ 1

Author(s):

Maslihan Ain Zubaidah ◽

N.A. Asli ◽

S.F.M. Yusop ◽

Mohamad Rusop ◽

Saifollah Abdullah

Keyword(s):

Porous Silicon ◽

Light Emitting Diode ◽

Volume Ratio ◽

Electrochemical Anodization ◽

Silicon Nanostructures ◽

Etching Time ◽

Photoluminescence Properties ◽

Light Emitting ◽

Flat Screen ◽

P Type

Porous silicon nanostructures light-emitting diode (PSiNs-LED) will be a device for future flat screen display and can be high in demand. Main purpose of this experiment is to determine the photoluminescence properties of porous silicon nanostructures (PSiNs). PSiNs samples were prepared using photo-electrochemical anodization. P-type silicon substrate was used for this experiment. For the formation of PSiNs, a fixed current density (J=20 mA/cm2) and 30 minutes etching time was applied for the variety of electrolyte volume ratio. Volume ratio of hydrofluoric acid 48% (HF48%) and absolute ethanol (C2H5OH), HF48%:C2H5OH, were used for samples 3:1, 2:1, 1:1, 1:2 and 3:1. The effective photoluminescence properties was observed for sample C.

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