Simulation of Proton Beam Effects in Thin Insulating Films

Effects of exposing several insulators, commonly used for various purposes in integrated circuits, to beams of protons have been investigated. Materials considered include silicon dioxide, silicon nitride, aluminium nitride, alumina, and polycarbonate (Lexan). The passage of proton beams through ultrathin layers of these materials has been modeled by Monte Carlo simulations of particle transport. Parameters that have been varied in simulations include proton energy and insulating layer thickness. Materials are compared according to both ionizing and nonionizing effects produced by the passage of protons.

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Simulation of radiation effects in ultra-thin insulating layers

Nuclear Technology and Radiation Protection ◽

10.2298/ntrp1303308t ◽

2013 ◽

Vol 28 (3) ◽

pp. 308-315 ◽

Cited By ~ 1

Author(s):

Ljubinko Timotijevic ◽

Milos Vujisic ◽

Koviljka Stankovic

Keyword(s):

Monte Carlo ◽

Integrated Circuits ◽

Silicon Dioxide ◽

Heavy Ions ◽

Radiation Effects ◽

Charged Particles ◽

Alpha Particles ◽

Thin Layers ◽

Insulating Layer ◽

Charged Particle Transport

The Monte Carlo simulations of charged particle transport are used to investigate the effects of exposing ultra-thin layers of insulators (commonly used in integrated circuits) to beams of protons, alpha particles and heavy ions. Materials considered include silicon dioxide, aluminum nitride, alumina, and polycarbonate - lexan. The parameters that have been varied in simulations include the energy of incident charged particles and insulating layer thickness. Materials are compared according to both ionizing and non-ionizing effects produced by the passage of radiation.

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Grand canonical Monte Carlo simulations of intergranular glassy films in silicon nitride

Materials Science and Engineering A ◽

10.1016/j.msea.2006.01.014 ◽

2006 ◽

Vol 422 (1-2) ◽

pp. 123-135 ◽

Cited By ~ 17

Author(s):

T.S. Hudson ◽

D. Nguyen-Manh ◽

A.C.T. van Duin ◽

A.P. Sutton

Keyword(s):

Monte Carlo ◽

Silicon Nitride ◽

Monte Carlo Simulations ◽

Grand Canonical Monte Carlo ◽

Grand Canonical

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Graph-Based Symbolic Technique and Its Application in the Frequency Response Bound Analysis of Analog Integrated Circuits

The Scientific World JOURNAL ◽

10.1155/2014/202371 ◽

2014 ◽

Vol 2014 ◽

pp. 1-10

Author(s):

E. Tlelo-Cuautle ◽

S. Rodriguez-Chavez ◽

A. A. Palma-Rodriguez

Keyword(s):

Monte Carlo ◽

Integrated Circuits ◽

Monte Carlo Simulations ◽

Frequency Response ◽

Integrated Circuit ◽

Variational Analysis ◽

Computing Time ◽

Nonlinear Constrained Optimization ◽

Analog Ic ◽

Analytical Expressions

A new graph-based symbolic technique (GBST) for deriving exact analytical expressions like the transfer functionH(s)of an analog integrated circuit (IC), is introduced herein. The derivedH(s)of a given analog IC is used to compute the frequency response bounds (maximum and minimum) associated to the magnitude and phase ofH(s), subject to some ranges of process variational parameters, and by performing nonlinear constrained optimization. Our simulations demonstrate the usefulness of the new GBST for deriving the exact symbolic expression forH(s), and the last section highlights the good agreement between the frequency response bounds computed by our variational analysis approach versus traditional Monte Carlo simulations. As a conclusion, performing variational analysis using our proposed GBST for computing the frequency response bounds of analog ICs, shows a gain in computing time of 100x for a differential circuit topology and 50x for a 3-stage amplifier, compared to traditional Monte Carlo simulations.

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Monte Carlo Simulation on the CD-SEM Images of SiO2/Si Systems

Microscopy and Microanalysis ◽

10.1017/s1431927619000552 ◽

2019 ◽

Vol 25 (4) ◽

pp. 849-858

Author(s):

P. Zhang

Keyword(s):

Monte Carlo ◽

Silicon Dioxide ◽

Si Substrate ◽

Sem Images ◽

Insulating Layer ◽

Pitch Structure ◽

Experimental Parameters ◽

Material Systems ◽

Edge Profile ◽

Sem Imaging

AbstractSilicon dioxide (SiO2) has been the most important insulator in the highly-developed field of silicon (Si) technology. Accurate pitch and gate linewidth measurements for SiO2/Si systems (systems with a SiO2 insulating layer and Si substrate) have become necessary. Studying one such system obviously presents different results from that of the widely researched Si/Si structure, because the edge profile of the secondary electron (SE) signal contains contributions from two materials. In this work, several scanning electron microscope (SEM) images and SE profiles of SiO2/Si pitch and trapezoidal line structures, using various geometric and experimental parameters, were simulated through the use of Monte Carlo (MC) methods. It was found that, in contrast to Si/Si systems, the height of the insulating layer cannot be ignored during the evaluation of pitch and linewidth. The thickness (i.e., height) factor does play an important role in the contrast of SEM imaging and the shape of the SE profile in these two-material systems. The mechanism of the influence of insulating layer thickness for imaging was studied in detail. In addition, the SiO2/Si pitch structure with a real rough surface was also studied. This work has significant implications for the study of various kinds of two-material systems and could help to optimize the pitch and gate linewidth measurements.

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Low-voltage EDS of magnesium ferrite Dendrites in a FEG-SEM

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100164854 ◽

1996 ◽

Vol 54 ◽

pp. 478-479

Author(s):

Matthew T. Johnson ◽

Ian M. Anderson ◽

Jim Bentley ◽

C. Barry Carter

Keyword(s):

Monte Carlo ◽

Quantitative Analysis ◽

Monte Carlo Simulations ◽

Cross Section ◽

Spatial Resolution ◽

Low Voltage ◽

Magnesium Ferrite ◽

X Ray ◽

Interaction Volume ◽

Ferrite Spinel

Energy-dispersive X-ray spectrometry (EDS) performed at low (≤ 5 kV) accelerating voltages in the SEM has the potential for providing quantitative microanalytical information with a spatial resolution of ∼100 nm. In the present work, EDS analyses were performed on magnesium ferrite spinel [(MgxFe1−x)Fe2O4] dendrites embedded in a MgO matrix, as shown in Fig. 1. spatial resolution of X-ray microanalysis at conventional accelerating voltages is insufficient for the quantitative analysis of these dendrites, which have widths of the order of a few hundred nanometers, without deconvolution of contributions from the MgO matrix. However, Monte Carlo simulations indicate that the interaction volume for MgFe2O4 is ∼150 nm at 3 kV accelerating voltage and therefore sufficient to analyze the dendrites without matrix contributions.Single-crystal {001}-oriented MgO was reacted with hematite (Fe2O3) powder for 6 h at 1450°C in air and furnace cooled. The specimen was then cleaved to expose a clean cross-section suitable for microanalysis.

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