scholarly journals Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting

2015 ◽  
Vol 2015 ◽  
pp. 1-15 ◽  
Author(s):  
Shyr-Long Jeng ◽  
Chih-Chiang Wu ◽  
Wei-Hua Chieng
Keyword(s):  
Gallium Nitride ◽  
Equivalent Circuit ◽  
Field Effect Transistors ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Electrical Characteristics ◽  
Electrical Measurements ◽  
Power Transistors ◽  
High Power Output ◽  
The Difference

This study examined the output electrical characteristics—current-voltage (I-V) output, threshold voltage, and parasitic capacitance—of novel gallium nitride (GaN) power transistors. Experimental measurements revealed that both enhanced- and depletion-mode GaN field-effect transistors (FETs) containing different components of identical specifications yielded varied turn-off impedance; hence, the FET quality was inconsistent. Establishing standardized electrical measurements can provide necessary information for designers, and measuring transistor electrical characteristics establishes its equivalent-circuit model for circuit simulations. Moreover, high power output requires multiple parallel power transistors, and sorting the difference between similar electrical characteristics is critical in a power system. An isolated gate driver detection method is proposed for sorting the uniformity from the option of the turn-off characteristic. In addition, an equivalent-circuit model for GaN FETs is established on the basis of the measured electrical characteristics and verified experimentally.

Predicting the engineering and transport properties of soils using fractal equivalent circuit model: Laboratory experiments

Geophysics ◽  
2011 ◽  
Vol 76 (5) ◽  
pp. F329-F338 ◽  
Author(s):  
Fred Kofi Boadu
Keyword(s):  
Hydraulic Conductivity ◽  
Transport Properties ◽  
Equivalent Circuit ◽  
Void Ratio ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Dry Density ◽  
Electrical Measurements ◽  
Intergranular Void Ratio ◽  
Intergranular Void

Frequency-dependent electrical measurements of soils contain useful information about their texture and structure that can be linked to their engineering and transport properties. We performed frequency-dependent electrical measurements on 29 natural soils with wide variability in physical and textural properties in a laboratory environment at a constant stress level and in the frequency range of 0.01 Hz–10 kHz. The engineering and hydraulic properties of these soils, that is, the hydraulic conductivity [Formula: see text], void ratio [Formula: see text], fines content [Formula: see text], intergranular void ratio [Formula: see text] and the dry density [Formula: see text] are concurrently measured. The electrical behaviors of the soils are modeled with an equivalent circuit model, which are described by six circuit parameters. Relationships between the circuit parameters and the soil properties (geotechnical engineering and hydraulic) are investigated. Crossplots of frequency exponent [Formula: see text] and resistivity [Formula: see text] and that of [Formula: see text] and grain percent resistivity [Formula: see text] clusters soils with high and low values of hydraulic conductivity, whereas crossplots of relaxation time [Formula: see text] and [Formula: see text] clusters soils with high and low intergranular void ratio. Regression models are developed using the parameters [Formula: see text] and [Formula: see text] to predict the hydraulic conductivity with [Formula: see text]; [Formula: see text] and [Formula: see text] to predict the intergranular void ratio with [Formula: see text] and [Formula: see text] and [Formula: see text] to predict the dry density with [Formula: see text].

scholarly journals A Novel Simulation Method for Analyzing Diode Electrical Characteristics Based on Neural Networks

Electronics ◽  
2021 ◽  
Vol 10 (19) ◽  
pp. 2337
Author(s):  
Tao Liu ◽  
Le Xu ◽  
Yao He ◽  
Han Wu ◽  
Yong Yang ◽  
...  
Keyword(s):  
Neural Network ◽  
Equivalent Circuit ◽  
Physical Model ◽  
High Frequency ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Training Data ◽  
Electrical Characteristics ◽  
Large Injection ◽  
Equivalent Circuit Method

Based on the equivalent circuit model and physical model, a new method for analyzing diode electrical characteristics based on a neural network model is proposed in this paper. Although the equivalent circuit model is widely used, it cannot effectively reflect the working state of diode circuits under the conditions of large injection and high frequency. The analysis method based on physical models developed in recent years can effectively resolve the above shortcomings, but it faces the problem of a low simulation efficiency. Therefore, the physical model method based on neural network acceleration is used to improve the traditional, equivalent circuit model. The results obtained from the equivalent circuit model and the physical model are analyzed using the finite-difference time-domain method. The diode model based on a neural network is fitted with training data obtained from the results of the physical model, then it is summarized into a voltage–current equation and used to improve the traditional, equivalent circuit method. In this way, the improved equivalent circuit method can be used to analyze the working state of a diode circuit under large injection and high frequency conditions. The effectiveness of the proposed model is verified by some examples.

A SPICE Model for GaN-Gate Injection Transistor (GIT) at Room Temperature

2018 ◽  
Vol 27 (03n04) ◽  
pp. 1840017
Author(s):  
Frances Garcia ◽  
Samira Shamsir ◽  
Syed K. Islam ◽  
Leon M. Tolbert
Keyword(s):  
Gallium Nitride ◽  
Power Electronics ◽  
Equivalent Circuit ◽  
Room Temperature ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Spice Simulation ◽  
Spice Model ◽  
Circuit Components ◽  
Commercial Device

In this paper, an equivalent circuit model is developed for a commercial Gallium Nitride (GaN) gate injection transistor (GIT) device at room temperature. The I-V and C-V characteristics are extracted from the commercial device datasheet and fitted in MATLAB. The fitted equations are realized as a combination of behavioral circuit components to be carried out in SPICE simulation. The equivalent circuit model is tested in a simple configuration for I-V curve simulation through varying of parameters and then in a simple boost configuration typical for power electronics applications to check for convergence and expected results.

Process dependent electrical characteristics and equivalent circuit model of sol-gel based PZT capacitors

1992 ◽  
Vol 1 (2-4) ◽  
pp. 269-291 ◽  
Author(s):  
Takashi Mihara ◽  
Hitoshi Watanabe ◽  
Hiroyuki Yoshimori ◽  
C. A. Paz De Araujo ◽  
B. Melnick ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Sol Gel ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Electrical Characteristics

An Equivalent Circuit Model for Vertical Comb Drive MEMS Optical Scanner Controlled by Pulse Width Modulation

2012 ◽  
Vol 132 (1) ◽  
pp. 1-9 ◽  
Author(s):  
Satoshi Maruyama ◽  
Muneki Nakada ◽  
Makoto Mita ◽  
Takuya Takahashi ◽  
Hiroyuki Fujita ◽  
...  
Keyword(s):  
Equivalent Circuit ◽  
Pulse Width ◽  
Pulse Width Modulation ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Comb Drive ◽  
Optical Scanner

scholarly journals A Novel, Improved Equivalent Circuit Model for Double-Sided Linear Induction Motor

Electronics ◽  
2021 ◽  
Vol 10 (14) ◽  
pp. 1644
Author(s):  
Qian Zhang ◽  
Huijuan Liu ◽  
Tengfei Song ◽  
Zhenyang Zhang
Keyword(s):  
Finite Element ◽  
Finite Element Model ◽  
Equivalent Circuit ◽  
Skin Effect ◽  
Equivalent Circuit Model ◽  
Element Model ◽  
Circuit Model ◽  
End Effects ◽  
3D Finite Element ◽  
Linear Induction

A novel, improved equivalent circuit model of double-sided linear induction motors (DLIMs) is proposed, which takes the skin effect and the nonzero leakage reactance of the secondary, longitudinal, and transverse end effects into consideration. Firstly, the traditional equivalent circuit with longitudinal and transverse end effects are briefly reviewed. Additionally, the correction coefficients for longitudinal and transverse end effects derived by one-dimensional analysis models are given. Secondly, correction factors for skin effect, which reflects the inhomogeneous air gap magnetic field vertically, and the secondary leakage reactance are derived by the quasi-two-dimensional analysis model. Then, the proposed equivalent circuit is presented, and the excitation reactance and secondary resistance are modified by the correction coefficients derived from the three analytical models. Finally, a three-dimensional (3D) finite element model is used to verify the proposed equivalent circuit model under varying air gap width and frequency, and the results are also compared with that of the traditional equivalent circuit models. The calculated thrust characteristics by the proposed equivalent circuit and 3D finite element model are experimentally validated under a constant voltage–frequency drive.

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