Design and Simulation of a High-Isolation Series/Shunt Mixed MEMS Switch

2013 ◽  
Vol 457-458 ◽  
pp. 1644-1647
Author(s):  
Zhong Liang Deng ◽  
Sen Fan ◽  
Hao Wei ◽  
Cai Hu Chen ◽  
Hua Gong
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Gold Surface ◽  
Mixed Structure ◽  
Micro Fabrication ◽  
High Isolation ◽  
Mems Switch ◽  
Folded Structure ◽  
Wide Range ◽  
Better Than

In this paper, a novel high isolation switch was designed and optimized on high-resistance silicon substrate with all-metal beams. The RF MEMS switch was modeled with gold surface micro-fabrication process. To obtain a low actuation voltage and a better isolation, a folded structure in the shunt part of the switch and a short capacitance in the series part were designed, respectively. By combining the series and shunt switches, the mixed structure offered a wide range (DC-40GHz) with excellent isolation better than-35dB and insertion loss less than 0.72dB at the same range, making it promising for applications with wide frequency bands.

scholarly journals Development of Broadband Low Actuation Voltage RF MEM Switches

2002 ◽  
Vol 25 (1) ◽  
pp. 97-111 ◽  
Author(s):  
S. C. Shen ◽  
D. Becher ◽  
Z. Fan ◽  
D. Caruth ◽  
Milton Feng
Keyword(s):  
Insertion Loss ◽  
Integrated Circuit ◽  
Rf Mems ◽  
Low Voltage ◽  
Actuation Voltage ◽  
University Of Illinois ◽  
Mems Switch ◽  
The University ◽  
Better Than ◽  
Millimeter Wave Circuits

Low insertion loss, high isolation RF MEM switches have been thought of as one of the most attractive devices for space-based reconfigurable antenna and integrated circuit applications. Many RF MEMS switch topologies have been reported and they all show superior RF characteristics compared to semiconductor-based counterparts. At the University of Illinois, we developed state-of-the-art broadband low-voltage RF MEM switches using cantilever and hinged topologies. We demonstrated promisingsub-10volts operation for both switch topologies.The switches have an insertion loss of less than 0:1 dB, and an isolation of better than 25 dB over the frequency range from 0.25 to 40 GHz. The RF Model of the MEM switch was also established. The low voltage RF MEM switches will provide a solution for low voltage and highly linear switching methods for the next generation of broadband RF, microwave, and millimeter-wave circuits.

The study of a high-isolation single-pole-double-throw RF MEMS switch

2018 ◽  
Vol 32 (30) ◽  
pp. 1850362
Author(s):  
Lei Han ◽  
Shen Xiao
Keyword(s):  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Frequency Range ◽  
Rf Mems Switch ◽  
High Isolation ◽  
Mems Switch ◽  
Thermal Actuators ◽  
Measurement Results ◽  
Better Than

In this paper, design, fabrication and measurements of a novel single-pole-double-throw three-state RF MEMS switch based on silicon substrate are presented. The RF MEMS switch consists of two UV-shaped beam push–pull thermal actuators which have three states of ON, OFF and Deep-OFF by using current actuation. When the switch is at Deep-OFF state, it can provide a higher isolation. The switch is fabricated by MetalMUMPs process. The measurement results show that, to the proposed single-pole-double-throw RF MEMS switch, when Switch I is at the ON state and Switch II is at the OFF state, the return loss is better than −16 dB, the insertion loss of Port1 and Port2 is less than −0.9 dB and the isolation of Port3 and Port1 is better than −22 dB at the frequency range from 8 GHz to 12 GHz. When Switch I is at the ON state and the actuator of Switch II is pulled back, which is called the Deep-OFF state, the return loss of Port1 is better than −15.5 dB, the insertion loss of Port1 and Port2 is better than −0.8 dB, and the isolation of Port3 and Port1 is better than −23.5 dB can be achieved at the frequency range from 8 GHz to 12 GHz.

A Feasibility Study on Micro Silicon Cantilever Beam for High Isolation RF MEMS Switch

2007 ◽  
Author(s):  
Lingling Lin ◽  
Feiyan Chen ◽  
Guoqing Hu ◽  
Wenyan Liu ◽  
Baihai Wu
Keyword(s):  
Cantilever Beam ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Dielectric Materials ◽  
Rf Mems Switch ◽  
High Isolation ◽  
Electrostatically Actuated ◽  
Mems Switch ◽  
Silicon Cantilever ◽  
High Contact Force

This paper presents a novel electrostatically actuated microelectromechanical switch. The structure of cantilever beam with electrodes sandwiched between Si and SiO2 layers has been established. Placing the pull-down electrodes outside the switching contact, the actuation voltage can be reduced while keeping high contact force and restoration force. The top and bottom dielectric materials separated two conducting electrodes when actuated. Thus, the reliability and the performance of the switch have been greatly improved. The charts of the deflection of the cantilever beam with respect to the voltage have been simulated with the MATLAB computer programming language.

scholarly journals Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

2016 ◽  
Vol 2016 ◽  
pp. 1-7 ◽  
Author(s):  
Deepak Bansal ◽  
Anuroop Bajpai ◽  
Prem Kumar ◽  
Maninder Kaur ◽  
Kamljit Rangra
Keyword(s):  
Rf Mems ◽  
Switching Time ◽  
Actuation Voltage ◽  
Electromagnetic Response ◽  
Mems Devices ◽  
Switching Speed ◽  
Capacitive Switch ◽  
Mems Switch ◽  
Line Insertion ◽  
Better Than

RF MEMS devices are known to be superior to their solid state counterparts in terms of power consumption and electromagnetic response. Major limitations of MEMS devices are their low switching speed, high actuation voltage, larger size, and reliability. In the present paper, a see-saw single pole double throw (SPDT) RF MEMS switch based on anchor-free mechanism is proposed which eliminates the above-mentioned disadvantages. The proposed switch has a switching time of 394 nsec with actuation voltage of 5 V. Size of the SPDT switch is reduced by utilizing a single series capacitive switch compared to conventional switches with capacitive and series combinations. Reliability of the switch is improved by adding floating metal and reducing stiction between the actuating bridge and transmission line. Insertion loss and isolation are better than −0.6 dB and −20 dB, respectively, for 1 GHz to 20 GHz applications.

Low Actuation Voltage Capacitive Shunt RF-MEMS Switch Having a Corrugated Bridge

2006 ◽  
Vol E89-C (12) ◽  
pp. 1880-1887 ◽  
Author(s):  
Y.-T. SONG ◽  
H.-Y. LEE ◽  
M. ESASHI
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Rf Mems Switch ◽  
Mems Switch

scholarly journals Design and simulation of low actuation voltage RF MEMS shunt capacitive switch with serpentine flexures&rectangular perforations

2018 ◽  
Vol 7 (2.31) ◽  
pp. 4 ◽  
Author(s):  
K Jayavardhani ◽  
S K. Noureen Fathima ◽  
K Bhima Sankar ◽  
K Kavya Sri ◽  
S Sunithamani
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Air Gap ◽  
Spring Constant ◽  
Squeeze Film ◽  
Capacitive Switch ◽  
High Isolation ◽  
Low Insertion Loss ◽  
Rf Performance

This paper presents the design and simulation of RF MEMS shunt capacitive switch with low actuation voltage, low insertion loss and high isolation. Actuation voltage depends on the parameters like air gap, spring constant and actuation area. In this design, we have proposed a serpentine meander structure to reduce the spring constant of the beam thus reducing actuation voltage. The rectangular perforation is used to reduce the squeeze film damping by decreasing the mass of the switch. The proposed switch has attained a low actuation voltage of 4.5V for a displacement of 0.84μm. The air gap between the beam and the dielectric is 1μm. This radio frequency (RF) MEMS shunt switch is designed and simulated using COMSOL Multiphysics 5.2. The RF performance of the shunt switch is analyzed in Ansoft HFSS 13 and the results show that the return loss was about -13.50 dB at 20GHz in the OFF state and -8.5 dB at 18 GHz in the ON state. A high isolation of -36.00 dB was achieved in the OFF state at a frequency of 5GHz and a low insertion loss is obtained. The results show that the switch is suitable for wireless applications operating in the frequency range from 5 to 20GHz. 

scholarly journals Dynamic Study of a Capacitive MEMS Switch with Double Clamped-Clamped Microbeams

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Hatem Samaali ◽  
Fehmi Najar ◽  
Slim Choura
Keyword(s):  
Transmission Line ◽  
Electrostatic Force ◽  
Equations Of Motion ◽  
Actuation Voltage ◽  
Transient Behavior ◽  
Mems Switch ◽  
Grid Points ◽  
Capacitive Mems ◽  
Better Than ◽  
Rf Performances

We study a capacitive MEMS switch composed of two clamped-clamped exible microbeams. We first develop a mathematical model for the MEMS switch where the upper microbeam represents the ground transmission line and the lower one represents the central transmission line. An electrostatic force is applied between the two microbeams to yield the switch to its ON and OFF states. We derive the equations of motion of the system and associated boundary conditions and solve the static and dynamic problems using the differential quadratic method. We show that using only nine grid points gives relatively accurate results when compared to those obtained using FEM. We also examine the transient behavior of the microswitch and obtain results indicating that subsequent reduction in actuation voltage, switching time, and power consumption are expected along with relatively good RF performances. ANSYS HFSS simulator is used in this paper to extract the RF characteristics of the microswitch. HFSS simulation results show that the insertion loss is as low as −0.31 dB and that the return loss is better than −12.41 dB at 10 GHz in the ON state. At the OFF state, the isolation is lower than −23 dB in the range of 10 to 50 GHz.

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