scholarly journals Effects of the Growth Time and the Thickness of the Buffer Layer on the Quality of the Carbon Nanotubes

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
J. Chuen
Keyword(s):  
Carbon Nanotubes ◽  
Buffer Layer ◽  
Silicon Substrate ◽  
Chemical Vapor ◽  
Growth Time ◽  
Material Basis ◽  
Good Material ◽  
Threshold Time ◽  
Direct Growth

Direct growth of carbon nanotubes (CNTs) array onto silicon substrate by the chemical vapor deposition (CVD) is reported. Experimental results show that the thickness of the buffer layer has a significant effect on the morphology and defects of the array, and when the buffer layer is about 15 nm, the best array on the silicon substrate can be obtained. Moreover, when the growth time is less than the threshold time (70 minutes), the array height will increase with the increase of the time. Importantly, when the growth time is higher than this threshold time, the growth of array will stop, but when the growth is continuing, the amorphous carbon and carbon can cluster, which will affect the structure of the array. These results provide a good material basis for the device, thermal, and conductivity technology.

Study of the quality of carbon nanotubes produced by chemical vapor deposition

2017 ◽  
Vol 90 (9) ◽  
pp. 1484-1487
Author(s):  
A. N. Krasnovskii ◽  
P. S. Kishchuk ◽  
T. M. Mukhin
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor

scholarly journals Synthesis of Carbon Nanotubes by Plasma-Enhanced Chemical Vapor Deposition Using Fe1−xMnxO Nanoparticles as Catalysts: How Does the Catalytic Activity of Graphitization Affect the Yields and Morphology?

2019 ◽  
Vol 5 (3) ◽  
pp. 46 ◽  
Author(s):  
Takashi Yanase ◽  
Takuya Miura ◽  
Tatsuya Shiratori ◽  
Mengting Weng ◽  
Taro Nagahama ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Catalytic Activity ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Cvd ◽  
Catalytic Function ◽  
Yield And Quality ◽  
Synthesis Of Carbon Nanotubes

The choice of a catalyst for carbon nanotube (CNT) growth is critical to controlling the morphology and chirality of the final product. Plasma-enhanced chemical vapor deposition (PECVD) can alleviate the requirements of the catalyst, i.e., they must be active for both the decomposition of the source gas and graphitization in the conventional thermal CVD. However, it is still not well understood how the catalytic activity of the graphitization affects the yield and quality of CNTs. In this paper, we systematically investigated the influence of the catalytic activity of graphitization by tuning the composition of Fe1−xMnxO (x = 0–1) nanoparticles as catalysts. As the Mn component increased, the number of CNTs decreased because Mn has no catalytic function of the graphitization. The quality of CNTs also affected by the inclusion of the Mn component. Our study may provide useful information to develop a new catalyst for CNT growth in PECVD.

Synthesis of Controllably Grown Carbon Nanotubes Interconnects

2007 ◽  
Vol 1018 ◽  
Author(s):  
Seon Woo Lee ◽  
David Katz ◽  
Avi Kornblit ◽  
Daniel Lopez ◽  
Haim Grebel
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
Chemical Vapor ◽  
Single Wall Carbon Nanotube ◽  
Single Wall Carbon ◽  
Multi Wall Carbon Nanotube

AbstractIntra-connects (bridges spanning across in plane electrodes), which were made of carbon nanotube (CNT), were fabricated by CO Plasma Enhanced Chemical Vapor Deposition (PECVD), ethanol CVD and pyrolitic CO CVD. CO PECVD has been used with CO/H2 mixture at relatively low temperatures. Its yield was relatively low though and the quality of CNT intra-connect was not to par. Ethanol CVD resulted in many more multi-wall carbon nanotube (MWCNT) than single-wall carbon nanotube (SWCNT) intra-connects. CO CVD was the most effective and simplest way to grow CNT interconnects among the three methods, yielding well-aligned and straight SWCNT bridges.

scholarly journals The Effect of Ni Catalyst on the Growth of Multi-Walled Carbon Nanotubes by PECVD Method

2015 ◽  
Vol 1107 ◽  
pp. 314-319
Author(s):  
Mai Woon Lee ◽  
Muhammad Aniq Shazni Mohammad Haniff ◽  
Au Shih Teh ◽  
Daniel C.S. Bien ◽  
Soo Kien Chen ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Ni Catalyst ◽  
Slight Variation ◽  
Initial Size ◽  
Catalyst Layers ◽  
Multi Walled Carbon Nanotubes ◽  
Walled Carbon Nanotubes

In this paper, the effect of nickel (Ni) catalyst on the growth of carbon nanotubes (CNTs) was studied where the CNTs were vertically grown by plasma enhanced chemical vapor deposition (PECVD) method. The growth conditions were fixed at a temperature of 700°C with a pressure of 1000mTorr for 40 minutes with various thicknesses of sputtered Ni catalyst. Experimental results show that high density of CNTs was observed especially towards thicker catalyst layers where larger and taller nanotubes were formed. The growth rate increases by ~0.7 times with increasing catalyst thickness from 4nm to 10nm. The nucleation of the catalyst with various thicknesses was also studied as the absorption of the carbon feedstock is dependent on the initial size of the catalyst island. From the Raman results, we found that only slight variation in the intensity ratio of G-band over D-band as increasing catalyst thicknesses. The minor difference in G/D ratio indicates that the catalyst thickness does not significantly influence the quality of CNTs grown.

Electrical Contact of Au with CNTs Deposited at Different Deposition Temperatures on Silicon Substrate

2013 ◽  
Vol 667 ◽  
pp. 80-85
Author(s):  
F.S. Husairi ◽  
S.A.M Zobir ◽  
Mohamad Rusop Mahmood ◽  
Saifollah Abdullah
Keyword(s):  
Carbon Nanotubes ◽  
Raman Spectroscopy ◽  
Silicon Substrate ◽  
Electrical Contact ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Micro Raman Spectroscopy ◽  
Vapor Deposition Technique ◽  
Different Temperatures ◽  
P Type

In this work, the electrical properties of carbon nanotubes were deposited on silicon substrate at different temperatures studied. CNTs were deposited on silicon at temperature 700 to 850 0C by using double-furnace thermal chemical vapor deposition technique. Carbon nanotubes with diameters of 20 to 30 nm were successfully synthesized on a silicon substrate. In this system, carbon nanotubes were grown directly on the p-type silicon. The samples were characterized using field emission scanning electron microscopy and micro-Raman spectroscopy. Based on micro-Raman spectroscopy result, the peak carbon nanotube (around 1 300 to 1 600 nm) was detected. Good electrical contact produced when Au sputter on CNTs characterized by I-V probe. Samples CNTs produced at 850 OC possess good conducting compare to other.

DIRECT GROWTH OF MULTI-WALLED CARBON NANOTUBES ON SHARP TIPS FOR ELECTRON MICROSCOPY

NANO ◽  
2006 ◽  
Vol 01 (01) ◽  
pp. 35-39 ◽  
Author(s):  
M. MANN ◽  
K. B. K. TEO ◽  
W. I. MILNE ◽  
T. TESSNER
Keyword(s):  
Carbon Nanotubes ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Vertical Axis ◽  
Electron Sources ◽  
Multi Walled Carbon Nanotubes ◽  
Direct Growth ◽  
Walled Carbon Nanotubes ◽  
Excellent Stability ◽  
Walled Cnts

The favorable electron optical properties of carbon nanotubes (CNTs) have been studied in detail, but the application to electron sources has been limited by the complexity of the fabrication process. We report the use of Plasma Enhanced Chemical Vapor Deposition (PECVD) for the direct deposition of multi-walled CNTs onto the apex of sharply etched tungsten tips, aligned to the vertical axis of the tips. We show that these emitters have excellent stability.

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