Antioxidant Activity of Potato Seedlings at Different Storage Temperatures

In order to promote the storage and growth of potato seedlings, the antioxidant activities of potato seedlings at different storage temperatures were analyzed. The antioxidant activities of potato seedlings at two different temperatures were compared. In addition, the effects of high temperature and normal temperature on the growth phenotype and antioxidant system physiological indexes of potato seedlings were analyzed by high temperature treatment. According to the significant change characteristics of SOD activity of antioxidant index at different temperatures, the SOD genes of potato were screened and bioinformatics analysis and gene expression analysis were carried out. The results showed that high temperature inhibited the antioxidant activity of potato seedlings and affected the growth of potato seedlings. The growth of potato seedlings can be promoted in medium and low temperature environment. In the future research, the experimental results can be used as the theoretical basis for potato planting.

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Influence of Temperature and Gibberellins on Growth and Development of Tuberose in Greenhouse

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.788.329 ◽

2013 ◽

Vol 788 ◽

pp. 329-333

Author(s):

Jing Hui Yang ◽

Hui Jie Xu ◽

Jian Ke Li ◽

Jun Xuan Huang ◽

Yan Jun Liu ◽

...

Keyword(s):

High Temperature ◽

Cold Treatment ◽

Temperature Treatment ◽

High Temperature Treatment ◽

Planting Dates ◽

Flowering Duration ◽

Low Temperature Treatment ◽

Different Temperatures ◽

Forcing Culture

In order to advance blooming from autumn to spring and to evaluate the vegetative and reproductive characteristics of tuberose, the forcing culture was carried out in greenhouse by treatments of temperature (ck, 4 °C, and 30 °C) and GA3 (0, 40, and 80 mg·L1)on corms before planting. The results showed that number of days to flower with corms treated at 4 or 30 °C was reduced and the corm sprouting was enhanced significantly in all planting dates. High temperature treatment made more corms sprouting than cold treatment except the Dec planting. Flowering percentage at 4 °C was enhanced in the Dec planting compared with CK (15 °C). Low temperature treatment significantly reduced length of spikes in Oct planting. The number of florets per spike was decreased significantly by the low or high temperature treatments in both Oct and Dec plantings. There was no difference in floret number under different temperatures except Oct plantings. GA3 had no significant effects on flowering duration when corms were planted at the same dates. GA3 had less influence on growth and flowering of Double compared with the temperature treatment. The quality of cutting flowers was decreased in greenhouse compared with local field production. Therefore, the forcing cultivation of tuberose may be performed with Double and no man-forced winter dormancy of corm treated at 4 °C for 30 days or 30 °C for 15 days before planting.

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The Role of High Temperature Treatments in Stress Release and Defect Reduction

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.131-133.369 ◽

2007 ◽

Vol 131-133 ◽

pp. 369-374 ◽

Cited By ~ 1

Author(s):

Isabella Mica ◽

Maria Luisa Polignano ◽

Emiliano Bonera ◽

Gian Pietro Carnevale ◽

P. Magni

Keyword(s):

High Temperature ◽

Mechanical Stress ◽

Temperature Treatment ◽

High Temperature Treatment ◽

Defect Reduction ◽

Implantation Damage ◽

Original Analysis ◽

Different Temperatures ◽

First Time

In this work we discuss an original analysis about a method to reduce the dislocation density in the devices that use the Shallow Trench Isolation (STI). It is well known that a high mechanical stress in silicon combined with an amorphizing implantation damage can generate many dislocations. So we propose to release the mechanical stress in silicon before implanting. A high temperature treatment indeed can trigger the viscous behaviour of the filling oxide inducing the relaxation of the stress field in silicon. For the first time a systematic study of the effect of different furnace and RTP annealings in the stress relaxation was done by Raman measurements. Different temperatures (from 3000C to 11000C) and different durations (from few seconds to one hour) were explored and the experimental results were compared with the numerical simulation with a good agreement. Finally we study the effect of the most promising annealings selected by Raman in a complete process flow.

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Improvement of the Microstructure and X-ray Performance of Ultrathin Ru/C Multilayer Mirror after High Temperature Treatment

Coatings ◽

10.3390/coatings11010045 ◽

2021 ◽

Vol 11 (1) ◽

pp. 45

Author(s):

Yang Liu ◽

Qiushi Huang ◽

Runze Qi ◽

Liangxing Xiao ◽

Zhong Zhang ◽

...

Keyword(s):

High Temperature ◽

Temporal Stability ◽

Temperature Treatment ◽

High Temperature Treatment ◽

Maximum Enhancement ◽

Multilayer Mirror ◽

Long Term Storage ◽

Transmission Electron ◽

Different Temperatures ◽

Crystallographic Planes

Ru/C multilayer mirrors with a period of 2.5 nm and 150 bilayers were studied under high-temperature annealing and long-term storage. A general increase in the reflectivity was observed after annealing at different temperatures from 300 to 700 °C, during which a maximum enhancement of around 14% was obtained at 600 °C. The highest reflectance measured at 8 keV reached 69% after 600 °C annealing. This was accompanied by a 6% expansion of the layer period, which could be mainly attributed to carbon layers. The surface roughness was not affected by the annealing, whereas the polycrystallization of Ru with crystallographic planes parallel to the layer interfaces was enhanced. Combining the transmission-electron microscopy measurements, it was found that the interdiffusion at the C-on-Ru interface was significantly suppressed. The decreased interdiffusion, enhanced optical contrast, and larger multilayer period were the main reasons for the increased reflectance. The 600 °C annealed Ru/C multilayer remained intact after 13 months of storage in air, which also demonstrated significant temporal stability.

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