scholarly journals Comparison of Arc Erosive and Laser Beam Trimming of Thin Film Resistors

1977 ◽  
Vol 4 (3-4) ◽  
pp. 179-183 ◽  
Author(s):  
Zs. Illyefalvi-Vitéz
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Beam ◽  
Measuring Method ◽  
Optimal Conditions ◽  
Current Generator ◽  
Physical Processes ◽  
Laser Beam Machining ◽  
Arc Erosion ◽  
Thin Film Resistors

The physical processes of arc erosive micromachining and the influence of trimming on the parameters of resistors have been examined, and thin film resistors without trimming are compared with those trimmed by arc erosion and laser beam machining.In the paper a theoretical model for arc erosion of thin films is proposed. The optimal conditions of arc erosive trimming are determined. The shape of the cuts are recorded and examined. The applicability of arc erosive trimming with respect to stability is proved. A measuring method is introduced for resistors trimmed by arc erosion using a direct current generator.

Short-range order in amorphous co-sputtered Ta-Al thin films

1986 ◽  
Vol 44 ◽  
pp. 860-861
Author(s):  
J.C. Barry ◽  
R.S. Timsit ◽  
D. Landheer
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Microscope ◽  
High Resolution ◽  
Short Range ◽  
Short Range Order ◽  
Range Order ◽  
Transmission Electron ◽  
Thin Film Resistors ◽  
Diffraction Patterns

Tantalum-aluminium thin films have assumed considerable technological importance since the discovery in the late 1960's that the films are useful in the fabrication of thin film resistors and capacitors. It is generally claimed that these films, when prepared by co-sputtering Ta and Al, are amorphous over a range of Ta concentrations extending approximately from 15 to 75 at%, and are crystalline beyond this range. Diffuse electron diffraction patterns and ‘mottle pattern’ transmission electron micrographs are typical characteristics of the amorphous phase. In this present study we have attempted to identify any atomic short range order in the amorphous Ta-Al films and to follow the changes in this order as the Ta concentration increases across the amorphous/crystalline transition. The co-sputtered Ta-Al films of ≈100A thickness were examined in a high resolution 4000EX electron microscope (top entry, ±15°(x,y) tilt, Cs = 1.0mm ) at 400kV.

scholarly journals Low-temperature technology and physical processes in green thin-film phosphor Zn2GeO4-Mn

2001 ◽  
Vol 667 ◽  
Author(s):  
V. Bondar ◽  
S. Popovich ◽  
T. Felter ◽  
J. Wager
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Low Temperature ◽  
Esr Spectra ◽  
Photoluminescence Excitation ◽  
Manganese Ions ◽  
Physical Processes ◽  
Excitation Spectra ◽  
Lower Temperature ◽  
Electro Luminescence

ABSTRACTThin-film Zn2GeO4:Mn phosphors with lower temperature of crystallization and potentially compatible with industrial technologies were investigated. The technology of thin films synthesis has been developed and their structure and crystal parameters have been investigated. Photoluminescence excitation spectra, photoconductivity, temperature dependencies and ESR-spectra of manganese ions were studied. A mechanism for luminescence in this phosphor has been proposed. Results are presented of cathodo- and electro-luminescence of thin film structures of Zn2GeO4:Mn.

Characterization of Tantalum Nitride Thin Films Deposited on SiO[sub 2]∕Si Substrates Using dc Magnetron Sputtering for Thin Film Resistors

2006 ◽  
Vol 153 (2) ◽  
pp. G164 ◽  
Author(s):  
Nguyen Duy Cuong ◽  
Dong-Jin Kim ◽  
Byoung-Don Kang ◽  
Chang Soo Kim ◽  
Kwang-Min Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Tantalum Nitride ◽  
Dc Magnetron Sputtering ◽  
Si Substrates ◽  
Thin Film Resistors

Enhance the Power Capability of TaN Thin Film Resistor by Improving Processes

2014 ◽  
Vol 1082 ◽  
pp. 30-33
Author(s):  
Bin Wang ◽  
Qian Tao Cao ◽  
Zhen Guo Song
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Anodic Oxidation ◽  
Average Power ◽  
Film Resistor ◽  
Thin Film Resistor ◽  
Thin Film Resistors ◽  
Power Capability ◽  
Sputtering System

Technologies of TaN thin-film resistors were studied, the thin films were prepared by the D.C. sputtering system, and the trimming methods of the resistor were anodic oxidation and autoxidation. We laid emphasis on the study of power capability of TaN thin film resistor in this paper. We acquired the resistors with the average power capability of 13W/mm2.

Characterizations of high resistivity TiNxOy thin films for applications in thin film resistors

2007 ◽  
Vol 47 (4-5) ◽  
pp. 752-754 ◽  
Author(s):  
Nguyen Duy Cuong ◽  
Dong-Jin Kim ◽  
Byoung-Don Kang ◽  
Chang Soo Kim ◽  
Soon-Gil Yoon
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Resistivity ◽  
Thin Film Resistors

An Approach on the Use of Co-Sputtered W-DLC Thin Films as Piezoresistive Sensing Materials

2021 ◽  
Vol 14 ◽  
Author(s):  
Gabriela Leal ◽  
Humber Furlan ◽  
Marcos Massi ◽  
Mariana Amorim Fraga
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Synthesis Method ◽  
Pressure Sensors ◽  
Strain Gauges ◽  
Gauge Factor ◽  
Diamond Like Carbon ◽  
Piezoresistive Sensors ◽  
Thin Film Resistors ◽  
Lift Off

Background: Miniaturized piezoresistive sensors, particularly strain gauges, pressure sensors, and accelerometers, have been used for measurements and control applications in various fields, such as automotive, aerospace, industrial, biomedical, sports, and many more. A variety of different materials have been investigated for the development of these sensors. Among them, diamond-like carbon (DLC) thin films have emerged as one of the most promising piezoresistive sensing materials due to their excellent mechanical properties, such as high hardness and high Young’s modulus. At the same time, metal doping has been studied to enhance its electrical properties. Objective: This article explores the use of co-sputtered tungsten-doped diamond-like carbon (W-DLC) thin films as microfabricated strain gauges or piezoresistors. Methods: Different serpentine thin-film resistors were microfabricated on co-sputtered W-DLC thin films using photolithography, metallization, lift-off, and RIE (reactive ion etching) processes. In order to evaluate their piezoresistive sensing performance, gauge factor (GF) measurements were carried out at room temperature using the cantilever beam method. Results: GF values obtained in this study for co-sputtered W-DLC thin films are comparable to those reported for W-DLC films produced and characterized by other techniques, which indicates the feasibility of our approach to use them as sensing materials in piezoresistive sensors. Conclusion: W-DLC thin films produced by the co-magnetron sputtering technique can be considered as sensing materials for miniaturized piezoresistive sensors due to the following key advantages: (i) easy and well-controlled synthesis method, (ii) good piezoresistive properties exhibiting a GF higher than metals, and (iii) thin-film resistors formed by a simple microfabrication process.

scholarly journals TiNxThin-Film Resistors for Hybrid Integrated Circuits

1980 ◽  
Vol 6 (3-4) ◽  
pp. 231-233
Author(s):  
Z. Kempisty ◽  
L. Kròl-Stępniewska ◽  
W. Posadowski
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Integrated Circuits ◽  
Sheet Resistance ◽  
Nitrogen Atmosphere ◽  
Accelerated Ageing ◽  
Glass Substrates ◽  
Thin Film Resistors

TiNxthin-films have been evaluated for use as thin-film resistors. Thin-films were obtained by reactive triode sputtering of titanium in nitrogen atmosphere on crystallized glass substrates. In the resistiveTiNxlayers, the value ofxwas 0.96.2The value of the sheet resistance of the tested layers was 30 ohm/sq. Stability and TCR were measured during accelerated ageing.

Temperature study of CVD graphene on Cu thin films: competition between C catalysis and Cu dewetting

2014 ◽  
Vol 1658 ◽  
Author(s):  
G. Amato ◽  
L. Croin ◽  
G. Milano ◽  
E. Vittone
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Film Surface ◽  
Chemical Vapor ◽  
Optimal Conditions ◽  
Red Emission ◽  
Thermal Chemical Vapor Deposition ◽  
Infra Red ◽  
Cu Thin Film

ABSTRACTIn this paper we report on a systematic study of Cu thin film dewetting by the monitoring of the intensity of the infra-red emission from the film surface during Rapid Thermal Chemical Vapor Deposition of graphene. The time evolution of Cu coverage highlights three typical stages of dewetting which strongly depend not only on the temperature and film thickness, but also on the pressure and composition of the gas in chamber. Consequently, we demonstrate that the Cu surface can be effectively activated in films at temperatures lower than in foils and the process can be fully controlled by adjusting those parameters, in order to reach the optimal conditions for graphene growth.

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