scholarly journals Performance Optimization of Nitrogen Dioxide Gas Sensor Based on Pd-AlGaN/GaN HEMTs by Gate Bias Modulation

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 400
Author(s):  
Van Cuong Nguyen ◽  
Kwangeun Kim ◽  
Hyungtak Kim
Keyword(s):  
Gas Sensors ◽  
Performance Optimization ◽  
Response Times ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Bias ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Hemts ◽  
Sensing Characteristics

We investigated the sensing characteristics of NO2 gas sensors based on Pd-AlGaN/GaN high electron mobility transistors (HEMTs) at high temperatures. In this paper, we demonstrated the optimization of the sensing performance by the gate bias, which exhibited the advantage of the FET-type sensors compared to the diode-type ones. When the sensor was biased near the threshold voltage, the electron density in the channel showed a relatively larger change with a response to the gas exposure and demonstrated a significant improvement in the sensitivity. At 300 °C under 100 ppm concentration, the sensor’s sensitivities were 26.7% and 91.6%, while the response times were 32 and 9 s at VG = 0 V and VG = −1 V, respectively. The sensor demonstrated the stable repeatability regardless of the gate voltage at a high temperature.

Reliability issues of Gallium Nitride High Electron Mobility Transistors

2010 ◽  
Vol 2 (1) ◽  
pp. 39-50 ◽  
Author(s):  
Gaudenzio Meneghesso ◽  
Matteo Meneghini ◽  
Augusto Tazzoli ◽  
Nicolo' Ronchi ◽  
Antonio Stocco ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Electron Mobility ◽  
Failure Modes ◽  
Deep Level ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Stress Tests ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Hemts

In the present paper we review the most recent degradation modes and mechanisms recently observed in AlGaN/GaN (Aluminum Gallium Nitride/Gallium Nitride). High Electron-Mobility Transistors (HEMTs), as resulting from a detailed accelerated testing campaign, based on reverse bias tests and DC accelerated life tests at various temperatures. Despite the large efforts spent in the last few years, and the progress in mean time to failure values, reliability of GaN HEMTs, and millimeter microwave integrated circuits still represent a relevant issue for the market penetration of these devices. The role of temperature in promoting GaN HEMT failure is controversial, and the accelerating degradation factors are largely unknown. The present paper proposes a methodology for the analysis of failure modes and mechanisms of GaN HEMTs, based on (i) DC and RF stress tests accompanied by an (ii) extensive characterization of traps using deep level transient spectroscopy and pulsed measurements, (iii) detailed analysis of electrical characteristics, and (iv) comparison with two-dimensional device simulations. Results of failure analysis using various microscopy and spectroscopy techniques are presented and failure mechanisms observed at the high electric field values typical of the operation of these devices are reviewed.

Integrated GaN/AlGaN/GaN HEMTs with Preciously Controlled Resistance on Silicon Substrate Fabricated by Ion Implantation

2008 ◽  
Vol 1068 ◽  
Author(s):  
Kazuki Nomoto ◽  
Tomo Ohsawa ◽  
Masataka Satoh ◽  
Tohru Nakamura
Keyword(s):  
Ion Implantation ◽  
Electron Mobility ◽  
Silicon Substrate ◽  
Drain Current ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Hemts ◽  
Ion Implanted

ABSTRACTMultiple ion-implanted GaN/AlGaN/GaN high electron-mobility transistors (HEMTs) and preciously controlled ion-implanted resistors integrated on silicon substrate are reported. Using ion implantation into source/drain (S/D) regions, the performances were significantly improved. On-resistance reduced from 10.3 to 3.5 Ω•mm. Saturation drain current and maximum transconductance increased from 390 to 650 mA/mm and from 130 to 230 mS/mm. Measured transfer curve shows that I/O gain of 4.5 can be obtained at Vdd = 10 V.

scholarly journals High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Micromachines ◽  
2021 ◽  
Vol 12 (5) ◽  
pp. 509
Author(s):  
Yu-Chun Huang ◽  
Hsien-Chin Chiu ◽  
Hsuan-Ling Kao ◽  
Hsiang-Chun Wang ◽  
Chia-Hao Liu ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Heat Removal ◽  
High Electron Mobility Transistors ◽  
Thermal Dissipation ◽  
High Electron ◽  
Electrical Characteristics ◽  
High Electron Mobility ◽  
Low Resistivity ◽  
Electron Mobility Transistors ◽  
Gan Hemts

Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity. This article reports the electrical characteristics of normally off p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) on a low-resistivity SiC substrate compared with the traditional Si substrate. The p-GaN HEMTs on the SiC substrate possess several advantages, including electrical characteristics and good qualities of epitaxial crystals, especially on temperature performance. Additionally, the price of the low-resistivity SiC substrate is three times lower than the ordinary SiC substrate.

Growth of AlGaN/GaN HEMTs on 3C-SiC/Si(111) Substrates

2008 ◽  
Vol 1068 ◽  
Author(s):  
Yvon Cordier ◽  
Marc Portail ◽  
Sébastien Chenot ◽  
Olivier Tottereau ◽  
Marcin Zielinski ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
High Electron Mobility Transistors ◽  
Structural Quality ◽  
High Electron ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Gan Hemts ◽  
Sic Films

ABSTRACTIn this work, we study cubic SiC/Si (111) templates as an alternative for growing GaN on silicon. We first developed the epitaxial growth of 3C-SiC films on 50mm Si(111) substrates using chemical vapor deposition. Then, AlGaN/GaN high electron mobility transistors were grown by molecular beam epitaxy on these templates. Both the structural quality and the behavior of transistors realized on these structures show the feasibility of this approach.

DEPENDENCE OF RF PERFORMANCE OF GaN/AlGaN HEMTS UPON AlGaN BARRIER LAYER VARIATION

2004 ◽  
Vol 14 (03) ◽  
pp. 750-755 ◽  
Author(s):  
ELIAS FARACLAS ◽  
RICHARD T. WEBSTER ◽  
GEORGE BRANDES ◽  
A. F. M. ANWAR
Keyword(s):  
Elevated Temperatures ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Bias ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Algan Barrier ◽  
Unity Gain ◽  
Algan Barrier Layer ◽  
Rf Performance

The dependence of microwave performance of GaN/AlGaN High Electron Mobility Transistors (HEMTs), namely the unity gain current cut-off frequency (fT) and the maximum oscillation frequency (fMAX), are reported as a function of the mole fraction of Al and the thickness of the barrier AlGaN layer. The parameters are computed using a physics-based model and compared to experimental results. Schrödinger and Poisson's equations are solved self-consistently to relate the applied gate bias to the channel electron concentration. The contributions of both spontaneous and piezoelectric polarizations towards f T are explored. Finally, because of interest in using this family of devices at elevated temperatures, each simulation was repeated between 300K and 500K for comparison.

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