scholarly journals Design modern structure for heterojunction quantum dot solar cells

2020 ◽  
Vol 10 (3) ◽  
pp. 2918 ◽  
Author(s):  
A. Thabet ◽  
S. Abdelhady ◽  
Youssef Mobarak
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Electrical Characteristics ◽  
Design Structure ◽  
Quantum Dot Solar Cells ◽  
Bulk Structure

This paper proposal new structure for improving the optical, electrical characteristics and efficiency of 3rd generation heterojunction quantum dot solar cell (HJQDSC) (ITO/CdS/QDPbS/Au) model by using the quantum dot window layer instead of bulk structure layers cell. Also, this paper presents theoretically analysis for the performance of the proposal HJQDSC (ITO/QDCdS/QDPbS/Au) structure. The new design structure was applied on traditional (SnO2/CdS/CdTe/Cu) and (ZnO/CdS/CIGS/Mo) thin film solar cells which based on sub-micro absorber layer thickness models by replacing the bulk CdTe, CIGS absorber layers and CdS window layer with quantum dot size materials to achieve higher efficiency with lesser usage layer material. Also, it has been studied the effect of using semiconductors layers in quantum dots size on electric and optical properties of thin film solar cells and the effect of window and absorber layers quantum dots radii on the performance of solar cells. Finally, a thermal efficiency analysis has been investigated for explaining the importance of new structure HJQD solar cells.

scholarly journals Ultra-optical characterization of thin film solar cells materials using core/shell absorber layer

2022 ◽  
Vol 12 (2) ◽  
pp. 1377
Author(s):  
Ahmed Thabet ◽  
Safaa Abdelhady ◽  
Youssef Mobarak
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Quantum Dot ◽  
Band Gap ◽  
Energy Band ◽  
Absorber Layer ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Core Shell ◽  
Energy Band Gap

<span>This paper investigates on new design of heterojunction quantum dot (HJQD) photovoltaics solar cells CdS/PbS that is based on quantum dot metallics PbS core/shell absorber layer and quantum dot window layer. It has been enhanced the performance of traditional HJQD thin film solar cells model based on quantum dot absorber layer and bulk window layer. The new design has been used sub-micro absorber layer thickness to achieve high efficiency with material reduction, low cost, and time. Metallics-semiconductor core/shell absorber layer has been succeeded for improving the optical characteristics such energy band gap and the absorption of absorber layer materials, also enhancing the performance of HJQD ITO/CdS/QDPbS/Au, sub micro thin film solar cells. Finally, it has been formulating the quantum dot (QD) metallic cores concentration effect on the absorption, energy band gap and electron-hole generation rate in absorber layers, external quantum efficiency, energy conversion efficiency, fill factor of the innovative design of HJQD cells.</span>

PbS quantum dot thin film solar cells using a CdS window layer

2013 ◽  
Author(s):  
Khagendra P. Bhandari ◽  
Hasitha Mahabaduge ◽  
Jianbo Gao ◽  
Randy J. Ellingson
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Quantum Dot ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Pbs Quantum Dot

scholarly journals Flexible and efficient perovskite quantum dot solar cells via hybrid interfacial architecture

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Long Hu ◽  
Qian Zhao ◽  
Shujuan Huang ◽  
Jianghui Zheng ◽  
Xinwei Guan ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
High Performance ◽  
Mechanical Stability ◽  
Mechanical Adhesion ◽  
Perovskite Quantum Dots ◽  
Efficient Charge ◽  
Photovoltaic Technologies

AbstractAll-inorganic CsPbI3 perovskite quantum dots have received substantial research interest for photovoltaic applications because of higher efficiency compared to solar cells using other quantum dots materials and the various exciting properties that perovskites have to offer. These quantum dot devices also exhibit good mechanical stability amongst various thin-film photovoltaic technologies. We demonstrate higher mechanical endurance of quantum dot films compared to bulk thin film and highlight the importance of further research on high-performance and flexible optoelectronic devices using nanoscale grains as an advantage. Specifically, we develop a hybrid interfacial architecture consisting of CsPbI3 quantum dot/PCBM heterojunction, enabling an energy cascade for efficient charge transfer and mechanical adhesion. The champion CsPbI3 quantum dot solar cell has an efficiency of 15.1% (stabilized power output of 14.61%), which is among the highest report to date. Building on this strategy, we further demonstrate a highest efficiency of 12.3% in flexible quantum dot photovoltaics.

Doping-free silicon thin film solar cells using a vanadium pentoxide window layer and a LiF/Al back electrode

2013 ◽  
Vol 103 (7) ◽  
pp. 073903 ◽  
Author(s):  
Hyung Hwan Jung ◽  
Jung-Dae Kwon ◽  
Sunghun Lee ◽  
Chang Su Kim ◽  
Kee-Seok Nam ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Vanadium Pentoxide ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Silicon Thin Film ◽  
Free Silicon

Investigation of Gold Quantum Dot Enhanced Organic Thin Film Solar Cells

2017 ◽  
Vol 34 (11) ◽  
pp. 1700133 ◽  
Author(s):  
Apichat Pangdam ◽  
Supeera Nootchanat ◽  
Chutiparn Lertvachirapaiboon ◽  
Ryousuke Ishikawa ◽  
Kazunari Shinbo ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Quantum Dot ◽  
Thin Film Solar Cells ◽  
Organic Thin Film

Quantum Dots with Built-in Charge for Enhancing Quantum Dot Solar Cells and Infrared Photodetectors

2012 ◽  
pp. 297-316
Author(s):  
Kimberly A. Sablon ◽  
V. Mitin ◽  
J. W. Little ◽  
A. Sergeev ◽  
N. Vagidov
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Quantum Dot ◽  
Infrared Photodetectors ◽  
Quantum Dot Solar Cells

Interface Engineering via Sputtered Oxygenated CdS:O Window Layer for Highly Efficient Sb 2 Se 3 Thin‐Film Solar Cells with Efficiency Above 7%

Solar RRL ◽  
2019 ◽  
Vol 3 (10) ◽  
pp. 1900225 ◽  
Author(s):  
Liping Guo ◽  
Baiyu Zhang ◽  
Smriti Ranjit ◽  
Jacob Wall ◽  
Swapnil Saurav ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Interface Engineering ◽  
Highly Efficient

scholarly journals It’s a Trap! Fused Quantum Dots Are Undesired Defects in Thin-Film Solar Cells

Chem ◽  
2019 ◽  
Vol 5 (7) ◽  
pp. 1692-1694 ◽  
Author(s):  
Kamalpreet Singh ◽  
Oleksandr Voznyy
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Solar Cells ◽  
Thin Film Solar Cells

scholarly journals Application of ALD-Al2O3 in CdS/CdTe Thin-Film Solar Cells

Energies ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 1123 ◽  
Author(s):  
Guanggen Zeng ◽  
Xia Hao ◽  
Shengqiang Ren ◽  
Lianghuan Feng ◽  
Qionghua Wang
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Atomic Layer ◽  
Transparent Conductive Oxide ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Window Layer ◽  
Cdte Thin Film ◽  
Cell Conversion ◽  
Al2o3 Films

The application of thinner cadmium sulfide (CdS) window layer is a feasible approach to improve the performance of cadmium telluride (CdTe) thin film solar cells. However, the reduction of compactness and continuity of thinner CdS always deteriorates the device performance. In this work, transparent Al2O3 films with different thicknesses, deposited by using atomic layer deposition (ALD), were utilized as buffer layers between the front electrode transparent conductive oxide (TCO) and CdS layers to solve this problem, and then, thin-film solar cells with a structure of TCO/Al2O3/CdS/CdTe/BC/Ni were fabricated. The characteristics of the ALD-Al2O3 films were studied by UV–visible transmittance spectrum, Raman spectroscopy, and atomic force microscopy (AFM). The light and dark J–V performances of solar cells were also measured by specific instrumentations. The transmittance measurement conducted on the TCO/Al2O3 films verified that the transmittance of TCO/Al2O3 were comparable to that of single TCO layer, meaning that no extra absorption loss occurred when Al2O3 buffer layers were introduced into cells. Furthermore, due to the advantages of the ALD method, the ALD-Al2O3 buffer layers formed an extremely continuous and uniform coverage on the substrates to effectively fill and block the tiny leakage channels in CdS/CdTe polycrystalline films and improve the characteristics of the interface between TCO and CdS. However, as the thickness of alumina increased, the negative effects of cells were gradually exposed, especially the increase of the series resistance (Rs) and the more serious “roll-over” phenomenon. Finally, the cell conversion efficiency (η) of more than 13.0% accompanied by optimized uniformity performances was successfully achieved corresponding to the 10 nm thick ALD-Al2O3 thin film.

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