High Frequency Magnetic, Electrical Properties and Ferromagnetism of Pure, Zn and Mg Substituted MnFe2O4 Ferrite Nanoparticles

2013 ◽  
Vol 5 (1) ◽  
pp. 18-22 ◽  
Author(s):  
Kuldeep Chand Verma ◽  
Sukhdeep Singh ◽  
R. K. Kotnala
Keyword(s):  
Electrical Properties ◽  
High Frequency ◽  
Ferrite Nanoparticles

scholarly journals Magnetic and electrical properties of yttrium substituted manganese ferrite nanoparticles prepared via micro-emulsion route

2020 ◽  
Vol 16 ◽  
pp. 102973 ◽  
Author(s):  
Muhammad Asif Yousuf ◽  
Sobia Jabeen ◽  
Maharzadi Noureen Shahi ◽  
Muhammad Azhar Khan ◽  
Imran Shakir ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ferrite Nanoparticles ◽  
Manganese Ferrite ◽  
Micro Emulsion ◽  
Magnetic And Electrical Properties

Magnetic and electrical properties of In doped cobalt ferrite nanoparticles

2012 ◽  
Vol 112 (8) ◽  
pp. 084321 ◽  
Author(s):  
Razia Nongjai ◽  
Shakeel Khan ◽  
K. Asokan ◽  
Hilal Ahmed ◽  
Imran Khan
Keyword(s):  
Electrical Properties ◽  
Cobalt Ferrite ◽  
Ferrite Nanoparticles ◽  
Cobalt Ferrite Nanoparticles ◽  
Magnetic And Electrical Properties

Thick Oxide Layers on N and P SiC Wafers by a Depo-Conversion Technique

1999 ◽  
Vol 572 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
I. Khlebnikov ◽  
S. Soloviev ◽  
T. S. Sudarshan
Keyword(s):  
Electrical Properties ◽  
Effective Charge ◽  
High Frequency ◽  
Breakdown Field ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Oxide Layers ◽  
Oxide Breakdown ◽  
Thermal Oxide ◽  
Capacitance Voltage

ABSTRACTThe electrical properties of thick oxide layers on n and p-type 6H-SiC obtained by a depoconversion technique are presented. High frequency capacitance-voltage measurements on MOS capacitors with a ∼ 3000 Å thick oxide indicates an effective charge density comparable to that of MOS capacitors with thermal oxide. The breakdown field of the depo-converted oxide obtained using a ramp response technique indicates a good quality oxide with average values in excess of 6 MV/cm on p-type SiC and 9 MV/cm on n-type SiC. The oxide breakdown field was observed to decrease with increase in MOS capacitor diameter.

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