Thick Oxide Layers on N and P SiC Wafers by a Depo-Conversion Technique
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ABSTRACTThe electrical properties of thick oxide layers on n and p-type 6H-SiC obtained by a depoconversion technique are presented. High frequency capacitance-voltage measurements on MOS capacitors with a ∼ 3000 Å thick oxide indicates an effective charge density comparable to that of MOS capacitors with thermal oxide. The breakdown field of the depo-converted oxide obtained using a ramp response technique indicates a good quality oxide with average values in excess of 6 MV/cm on p-type SiC and 9 MV/cm on n-type SiC. The oxide breakdown field was observed to decrease with increase in MOS capacitor diameter.
2006 ◽
Vol 527-529
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pp. 983-986
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2011 ◽
Vol 679-680
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pp. 326-329
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2007 ◽
Vol 556-557
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pp. 647-650
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2010 ◽
Vol 645-648
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pp. 689-692
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