Sensitivity of the high frequency sounding method to variations in electrical properties

2010 ◽  
Author(s):  
Erin L. Wallin
Keyword(s):  
Electrical Properties ◽  
High Frequency

Thick Oxide Layers on N and P SiC Wafers by a Depo-Conversion Technique

1999 ◽  
Vol 572 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
I. Khlebnikov ◽  
S. Soloviev ◽  
T. S. Sudarshan
Keyword(s):  
Electrical Properties ◽  
Effective Charge ◽  
High Frequency ◽  
Breakdown Field ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Oxide Layers ◽  
Oxide Breakdown ◽  
Thermal Oxide ◽  
Capacitance Voltage

ABSTRACTThe electrical properties of thick oxide layers on n and p-type 6H-SiC obtained by a depoconversion technique are presented. High frequency capacitance-voltage measurements on MOS capacitors with a ∼ 3000 Å thick oxide indicates an effective charge density comparable to that of MOS capacitors with thermal oxide. The breakdown field of the depo-converted oxide obtained using a ramp response technique indicates a good quality oxide with average values in excess of 6 MV/cm on p-type SiC and 9 MV/cm on n-type SiC. The oxide breakdown field was observed to decrease with increase in MOS capacitor diameter.

Nitrogen-Atom Bonding at Sio2/SI Interfaces in Metalinsulator-Semiconductor (MIS) Stacked Gates Made by Integration of Plasma Assisted Oxidation-Deposition and Rapid Thermal Processing

1993 ◽  
Vol 303 ◽  
Author(s):  
Y. Ma ◽  
T. YAsuda ◽  
G. Lucovsky
Keyword(s):  
Electrical Properties ◽  
Thermal Processing ◽  
High Frequency ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Rapid Thermal Processing ◽  
Atom Concentration ◽  
Bonding Structure ◽  
Static Capacitance ◽  
Capacitance Voltage

ABSTRACTSiO2 thin films were deposited by remote PECVD on Si surfaces exposed to species generated in O2/N2 and O2/NH3 plasmas. The surface chemistry was studied by Auger Electron Spectroscopy, AES, and the electrical properties of the SiO2/Si interface by high frequency and quasi-static Capacitance-Voltage, C-V, measurements. The AES results showed that Ccontamination was removed by exposure to both plasma-excited gas mixtures, but that N-atoms were incorporated into the SiO2 film, and Si-N bonds were formed at the SiO2/Si interface. C-V measurements indicated that the Si-N bonding structure, rather than the N-atom concentration, is critical in determining the interface electrical properties. The effects of Rapid Thermal Annealing, RTA, on the electrical properties of these SiO2/Si interfaces were also studied.

Multilayered Structures for Electro Bonded Laminates

2011 ◽  
Author(s):  
Luigi Di Lillo ◽  
Dario Albino Carnelli ◽  
Andrea Bergamini ◽  
Paolo Ermanni
Keyword(s):  
Electrical Properties ◽  
Experimental Evidence ◽  
High Frequency ◽  
Mechanical Response ◽  
Variable Stiffness ◽  
Electric Properties ◽  
Multilayered Structures ◽  
Electric Model ◽  
Normal Forces ◽  
Insulating Properties

This paper reports on the investigation and optimization of the electric properties of a geometry based variable stiffness concept. The concept relies on the combination of electrostatic normal forces and friction between the layers of a multi-layer beam to develop structures, electro bonded laminates (EBL), with an actively tuneable bending stiffness. Previous studies have detailed the connection between the mechanical response of these system and the electrical properties of its polymer constitutive films. Particularly, they pointed out the need to improve both the dielectric and the insulating properties of these films in order to have an enhancement of the bending tunability range of the system. In this paper a multilayer polymer configuration is considered as a possible answer to this need and it is put forward together with the electric model and the relatively high frequency experimental evidence of the proposed solution.

Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures

2010 ◽  
Vol 645-648 ◽  
pp. 689-692 ◽  
Author(s):  
Fernanda Chiarello Stedile ◽  
Silma Alberton Corrêa ◽  
Cláudio Radtke ◽  
Leonardo Miotti ◽  
Israel J.R. Baumvol ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
High Frequency ◽  
Interfacial Layer ◽  
Dielectric Films ◽  
Thermal Treatments ◽  
X Ray ◽  
Nitrogen Incorporation ◽  
Capacitance Voltage

The consequences of thermal treatments in nitric oxide atmospheres on the characteristics of dielectric films / SiC structures was investigated by high-frequency capacitance-voltage measurements, X-ray photoelectron spectroscopy, and X-ray reflectometry techniques. It was observed that nitrogen incorporation in dielectric films / SiC structures leads to the formation of a thinner interfacial layer that contains carbon. This fact was related to the improvement of electrical properties of those structures.

Sign in / Sign up

Export Citation Format

Share Document