Comparative Investigation of Se–Te–M (M = Sb, Ge) Semiconducting Glassy Alloys: Thermal Characterization
Keyword(s):
Structural and thermal measurements have been performed in glassy Se78Te18M4 (M = Sb and Ge) alloys to study the effect of Sb and Ge additives on the kinetics of glass transition and crystallization. Kinetic parameters of glass transition and crystallization such as the activation energy of glass transition (Eg), the activation energy of crystallization (Ec) have been determined using different non-isothermal methods. It was found that Ge was more suitable dopant for phase change memory (PCM) devices due to its low activation energies as compared to Sb dopant.
2009 ◽
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2015 ◽
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pp. 675-682
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2011 ◽
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2017 ◽
Vol 727
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2017 ◽
Vol 129
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pp. 1429-1433
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