Evaluation of the Key Physical Parameters of Compressive Strained Ge1-x Snx for Optoelectronic Devices

2016 ◽  
Vol 13 (10) ◽  
pp. 7399-7407
Author(s):  
Li Yu-Chen
Keyword(s):  
Perturbation Theory ◽  
Effective Mass ◽  
Performance Improvement ◽  
Transformation Efficiency ◽  
Energy Levels ◽  
Optoelectronic Devices ◽  
Physical Parameters ◽  
Deformation Potential ◽  
Effective Masses ◽  
Deformation Potential Theory

Both strain technology and alloying technology can change the band structures of Germanium semiconductor. This paper focus on evaluation of the key physical parameters, such as energy levels and effective mass, of germanium under strain and alloy conditions, on the basis of deformation potential theory and kp perturbation theory. The results show that: (1), The bandgap transition in Ge1-xSnx alloy cannot occur under strain. So the transformation efficiency of the strained Ge1-xSnx/(001)Ge based devices can not be improved; (2), The various hole effective masses of strained Ge1-xSnx/(001)Ge decrease with the increase of the stress, which benefits to the pMOS performance improvement. Our valid models can provide the valuable references to the design of modified Ge semiconductor and optoelectronic devices.

Model of DOS near the Top of Valence Band in Strained Si1-xGex/(001)Si

2011 ◽  
Vol 55-57 ◽  
pp. 979-982
Author(s):  
Jian Jun Song ◽  
Heng Sheng Shan ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Guan Yu Wang ◽  
...  
Keyword(s):  
Effective Mass ◽  
Valence Band ◽  
Theoretical Basis ◽  
Hole Mobility ◽  
Physical Parameters ◽  
Density Of State ◽  
Strained Si ◽  
Hole Effective Mass ◽  
Effective Masses ◽  
Material Physics

Strained Si1-xGextechnology has been widely adopted to enhance hole mobility. One of the most important physical parameters is density of state near the top of valence band in strained Si1-xGexmaterials. In this paper, we first obtained the hole effective mass along arbitrarily k wavevector directions, the hole isotropic effective masses and density of state effective mass of hole in strained Si1-xGex/(001)Si with the framework of K.P theory. And then, model of density of state near the top of valence band in strained Si1-xGex/(001)Si materials was established, which can provide valuable references to the understanding on its material physics and theoretical basis on the other important physical parameters.

A Perturbation Theory for the Population of Atomic Energy Levels in Non-Lte Plasmas

1988 ◽  
Vol 102 ◽  
pp. 343-347
Author(s):  
M. Klapisch
Keyword(s):  
Perturbation Theory ◽  
Small Parameter ◽  
Classification Scheme ◽  
Sum Rules ◽  
Energy Levels ◽  
Natural Classification ◽  
Quantum Numbers ◽  
Formal Expansion ◽  
Atomic Energy Levels ◽  
As Effects

AbstractA formal expansion of the CRM in powers of a small parameter is presented. The terms of the expansion are products of matrices. Inverses are interpreted as effects of cascades.It will be shown that this allows for the separation of the different contributions to the populations, thus providing a natural classification scheme for processes involving atoms in plasmas. Sum rules can be formulated, allowing the population of the levels, in some simple cases, to be related in a transparent way to the quantum numbers.

Effective masses in a dense fermion background — Applied to neutrinos, dark matter and dark energy

2014 ◽  
Vol 29 (21) ◽  
pp. 1444010
Author(s):  
Bruce H. J. McKellar ◽  
T. J. Goldman ◽  
G. J. Stephenson
Keyword(s):  
Dark Matter ◽  
Dark Energy ◽  
Scalar Field ◽  
Effective Mass ◽  
Negative Pressure ◽  
Expectation Value ◽  
Effective Masses ◽  
Neutrino Astrophysics

If fermions interact with a scalar field, and there are many fermions present the scalar field may develop an expectation value and generate an effective mass for the fermions. This can lead to the formation of fermion clusters, which could be relevant for neutrino astrophysics and for dark matter astrophysics. Because this system may exhibit negative pressure, it also leads to a model of dark energy.

Calculation of vibrational HDO energy levels: Analysis of perturbation theory series

2013 ◽  
Vol 114 (3) ◽  
pp. 359-367 ◽  
Author(s):  
A. D. Bykov ◽  
K. V. Kalinin ◽  
A. N. Duchko
Keyword(s):  
Perturbation Theory ◽  
Energy Levels ◽  
Theory Series

Direct evaluation of hole effective mass of SnS–SnSe solid solutions with ARPES measurement

2021 ◽  
Author(s):  
Issei Suzuki ◽  
Zexin Lin ◽  
Sakiko Kawanishi ◽  
Kiyohisa Tanaka ◽  
Yoshitaro Nose ◽  
...  
Keyword(s):  
Effective Mass ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Solid Solutions ◽  
Photoemission Spectroscopy ◽  
Direct Evaluation ◽  
Hole Effective Mass ◽  
Single Crystalline ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Effective Masses

Valence band dispersions of single-crystalline SnS1-xSex solid solutions were observed by angle-resolved photoemission spectroscopy (ARPES). The hole effective masses, crucial factors in determining thermoelectric properties, were directly evaluated. They decrease...

scholarly journals Capturing excitonic and polaronic effects in lead iodide perovskites from many-body perturbation theory

2021 ◽  
Author(s):  
Pooja Basera ◽  
Arunima Singh ◽  
Deepika Gill ◽  
Saswata Bhattacharya
Keyword(s):  
Optical Properties ◽  
Perturbation Theory ◽  
Binding Energy ◽  
Electronic Properties ◽  
Effective Mass ◽  
Exciton Binding Energy ◽  
Many Body ◽  
Energy Materials ◽  
Lead Iodide ◽  
Many Body Perturbation Theory

Lead iodide perovskites have attracted considerable interest as promising energy-materials. However, till date, several key electronic properties such as optical properties, effective mass, exciton binding energy and the radiative exciton...

scholarly journals Performance Improvement of Ultra Wideband Multiple Access Modulation System using a new Optimal Pulse Shape

2017 ◽  
Vol 6 (1) ◽  
pp. 20
Author(s):  
V. Goyal ◽  
B. S. Dhaliwal
Keyword(s):  
Performance Improvement ◽  
Pulse Shape ◽  
Multiple Access ◽  
Energy Levels ◽  
Rake Receiver ◽  
Correct Choice ◽  
Low Energy ◽  
Ultra Wideband ◽  
High Data ◽  
Very High

Ultra-wideband (UWB) uses very low energy levels to transfer data at very high data rate and bandwidth. An optimal and correct choice of transmission pulse shape is an important criterion in this technology. In this paper, we will present an approach for the generation of an optimal pulse shape with the optimal generation of pulse shape values that can provide effective results when transmitted using multiple access modulation technique over a multipath channel and received by a RAKE type receiver. The bit error analysis of constructed model is also given using Ideal Rake, selective RAKE, and partial RAKE receiver configurations.

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