Model of DOS near the Top of Valence Band in Strained Si1-xGex/(001)Si

2011 ◽  
Vol 55-57 ◽  
pp. 979-982
Author(s):  
Jian Jun Song ◽  
Heng Sheng Shan ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Guan Yu Wang ◽  
...  
Keyword(s):  
Effective Mass ◽  
Valence Band ◽  
Theoretical Basis ◽  
Hole Mobility ◽  
Physical Parameters ◽  
Density Of State ◽  
Strained Si ◽  
Hole Effective Mass ◽  
Effective Masses ◽  
Material Physics

Strained Si1-xGextechnology has been widely adopted to enhance hole mobility. One of the most important physical parameters is density of state near the top of valence band in strained Si1-xGexmaterials. In this paper, we first obtained the hole effective mass along arbitrarily k wavevector directions, the hole isotropic effective masses and density of state effective mass of hole in strained Si1-xGex/(001)Si with the framework of K.P theory. And then, model of density of state near the top of valence band in strained Si1-xGex/(001)Si materials was established, which can provide valuable references to the understanding on its material physics and theoretical basis on the other important physical parameters.

scholarly journals E-kRelation of Valence Band in Arbitrary Orientation/Typical Plane Uniaxially Strained

2014 ◽  
Vol 2014 ◽  
pp. 1-9
Author(s):  
Zhang Chao ◽  
Xu Da-Qing ◽  
Liu Shu-Lin ◽  
Liu Ning-Zhuang
Keyword(s):  
Valence Band ◽  
Theoretical Basis ◽  
Carrier Mobility ◽  
Energy Levels ◽  
Hole Mobility ◽  
Strained Si ◽  
Effective Masses ◽  
Splitting Energy ◽  
Analytic Models ◽  
Strained Materials

Uniaxial strain technology is an effective way to improve the performance of the small size CMOS devices, by which carrier mobility can be enhanced. TheE-krelation of the valence band in uniaxially strained Si is the theoretical basis for understanding and enhancing hole mobility. The solving procedure of the relation and its analytic expression were still lacking, and the compressive results of the valence band parameters in uniaxially strained Si were not found in the references. So, theE-krelation has been derived by taking strained Hamiltonian perturbation into account. And then the valence band parameters were obtained, including the energy levels at Γ point, the splitting energy, and hole effective masses. Our analytic models and quantized results will provide significant theoretical references for the understanding of the strained materials physics and its design.

Direct evaluation of hole effective mass of SnS–SnSe solid solutions with ARPES measurement

2021 ◽  
Author(s):  
Issei Suzuki ◽  
Zexin Lin ◽  
Sakiko Kawanishi ◽  
Kiyohisa Tanaka ◽  
Yoshitaro Nose ◽  
...  
Keyword(s):  
Effective Mass ◽  
Valence Band ◽  
Thermoelectric Properties ◽  
Solid Solutions ◽  
Photoemission Spectroscopy ◽  
Direct Evaluation ◽  
Hole Effective Mass ◽  
Single Crystalline ◽  
Angle Resolved Photoemission Spectroscopy ◽  
Effective Masses

Valence band dispersions of single-crystalline SnS1-xSex solid solutions were observed by angle-resolved photoemission spectroscopy (ARPES). The hole effective masses, crucial factors in determining thermoelectric properties, were directly evaluated. They decrease...

Anisotropic Hole Mobility in Strained Si1-xGex/(001)Si

2011 ◽  
Vol 181-182 ◽  
pp. 388-392
Author(s):  
Jian Jun Song ◽  
Shuai Lei ◽  
He Ming Zhang ◽  
Hui Yong Hu
Keyword(s):  
Effective Mass ◽  
Doping Concentration ◽  
Hole Mobility ◽  
Deformation Potential ◽  
Rate Model ◽  
Strained Si ◽  
Scattering Rate ◽  
Relaxation Time Approximation ◽  
Crystal Orientations ◽  
Kp Theory

Applying KP theory combined with deformation potential we obtained the valence band structure, and based on this result we calculated the orientation-dependent effective mass which is also called conductivity effective mass in strained Si1-xGex/(001)Si in this research, and furthermore ,we established the scattering rate model by using the density-of-states effective mass. On the basis of conductivity effective mass and scattering rate model, utilizing analytical method and relaxation time approximation we obtained the dependence of the value of hole mobility on stress and doping concentration in strained Si1-xGex/(001)Si along different crystal orientations. Compare to the unstrained Si, the anisotropy of hole mobility is more obvious in strained Si1-xGex/(001)Si, for example, It shows that under the same stress and doping concentration (Ni=1x1014cm-3, x=0.4), the value of hole mobility along [010] crystal orientation is visibly higher than other crystal orientations. This result can provide valuable references to the research of hole mobility of strained Si1-xGex materials and the design of devices.

Valence band structure and hole effective mass of uniaxial stressed Germanium

2011 ◽  
Vol 10 (4) ◽  
pp. 388-393 ◽  
Author(s):  
Jian-Li Ma ◽  
He-Ming Zhang ◽  
Xiao-Yan Wang ◽  
Qun Wei ◽  
Guan-Yu Wang ◽  
...  
Keyword(s):  
Band Structure ◽  
Effective Mass ◽  
Valence Band ◽  
Hole Effective Mass ◽  
Valence Band Structure

Influence of nitrogen on hole effective mass and hole mobility in p-type modulation doped GaInNAs/GaAs quantum well structures

2013 ◽  
Vol 103 (8) ◽  
pp. 082121 ◽  
Author(s):  
F. Sarcan ◽  
O. Donmez ◽  
A. Erol ◽  
M. Gunes ◽  
M. C. Arikan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Effective Mass ◽  
Hole Mobility ◽  
Hole Effective Mass ◽  
Quantum Well Structures ◽  
P Type

Valence Band Parameters for Wurtzite GaN and InN

1997 ◽  
Vol 482 ◽  
Author(s):  
Y. C. Yeo ◽  
T. C. Chong ◽  
M. F. Li
Keyword(s):  
Effective Mass ◽  
Semiconductor Lasers ◽  
Material Design ◽  
Electronic Band ◽  
Hole Effective Mass ◽  
Material Parameters ◽  
Empirical Pseudopotential Method ◽  
Effective Masses ◽  
Electronic Band Structures ◽  
K.P Method

AbstractTheoretical studies and design of quantum well lasers employing InGaN require material parameters for both GaN and InN. However, the Luttinger-like effective-mass parameters for InN are currently unavailable. In this work, we extract effective-mass parameters for wurtzite GaN and InN from their electronic band structures calculated using the Empirical Pseudopotential Method (EPM). We obtain the electron and hole (including the heavy- (HH), light- (LH), and crystal-field split-off (CH) holes) effective-masses at the Γ point in the kz and the in-plane kx-ky plane) directions using a parabolic fit. In addition, the hole effective-mass parameters are derived using the 6×6 effective-mass Hamiltonian and the k.p method. Our results will be useful for material design in wide-gap nitride-based semiconductor lasers containing InGaN.

scholarly journals Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 261
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Weng Kent Chan ◽  
Hsin-Yi Tiffany Chen ◽  
Vladimir Gritsenko
Keyword(s):  
Thin Film ◽  
Integrated Circuits ◽  
Effective Mass ◽  
High Performance ◽  
Low Voltage ◽  
High Mobility ◽  
Hole Mobility ◽  
Small Hole ◽  
Hole Effective Mass ◽  
Sharp Turn

High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole mobility of greater than 10 cm2/V·s, even for SnO TFTs with a unique single-hole band and a small hole effective mass. In this paper, we demonstrate a high-performance GeSn pTFT with a high field-effect hole mobility (μFE), of 41.8 cm2/V·s; a sharp turn-on subthreshold slope (SS), of 311 mV/dec, for low-voltage operation; and a large on-current/off-current (ION/IOFF) value, of 8.9 × 106. This remarkably high ION/IOFF is achieved using an ultra-thin nanosheet GeSn, with a thickness of only 7 nm. Although an even higher hole mobility (103.8 cm2/V·s) was obtained with a thicker GeSn channel, the IOFF increased rapidly and the poor ION/IOFF (75) was unsuitable for transistor applications. The high mobility is due to the small hole effective mass of GeSn, which is supported by first-principles electronic structure calculations.

Light Effective Mass in the Widely-Dispersed Valence Band of Single Crystalline Rubrene Observed by High-Resolution Angle-Resolved Ultraviolet Photoelectron Spectroscopy

2009 ◽  
Vol 1197 ◽  
Author(s):  
Yasuo Nakayama ◽  
Shin-ichi Machida ◽  
Steffen Duhm ◽  
Qian Xin ◽  
Akihiro Funakoshi ◽  
...  
Keyword(s):  
High Resolution ◽  
Charge Carrier ◽  
Single Crystals ◽  
Effective Mass ◽  
Valence Band ◽  
Photoelectron Spectroscopy ◽  
Ultraviolet Photoelectron Spectroscopy ◽  
Hole Effective Mass ◽  
Single Crystalline ◽  
Laser Illumination

AbstractHigh-resolution angle resolved ultraviolet photoelectron spectroscopy measurements were conducted on rubrene single crystals successfully through relief of the sample charging assisted by a laser illumination. Significant dispersion of the valence band was clearly resolved. The band width W and the hole effective mass mh* were estimated to be 0.4 eV and 0.7m0, respectively, along the most conductive direction. The present results strongly suggest that the transport nature in rubrene single crystals should be described in the band transport framework of a delocalized charge carrier.

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