Fabrication and Characterization of Directly-Assembled ZnO Nanowire Field Effect Transistors with Polymer Gate Dielectrics

2007 ◽  
Vol 7 (11) ◽  
pp. 4101-4105
Author(s):  
Ahnsook Yoon ◽  
Woong-Ki Hong ◽  
Takhee Lee
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Electrical Characteristics ◽  
Zno Nanowire ◽  
Device Structure

We report the fabrication and electrical characterization of ZnO nanowire field effect transistors (FETs). Dielectrophoresis technique was used to directly align ZnO nanowires between lithographically prepatterned source and drain electrodes, and spin-coated polyvinylphenol (PVP) polymer thin layer was used as a gate dielectric layer in "top-gate" FET device configuration. The electrical characteristics of the top-gate ZnO nanowire FETs were found to be comparable to the conventional "bottom-gate" nanowire FETs with a SiO2 gate dielectric layer, suggesting the directly-assembled nanowire FET with a polymer gate dielectric layer is a useful device structure of nanowire FETs.

Fabrication and Characterization of Directly-Assembled ZnO Nanowire Field Effect Transistors with Polymer Gate Dielectrics

2007 ◽  
Vol 7 (11) ◽  
pp. 4101-4105 ◽  
Author(s):  
Ahnsook Yoon ◽  
Woong-Ki Hong ◽  
Takhee Lee
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Electrical Characteristics ◽  
Zno Nanowire ◽  
Device Structure

We report the fabrication and electrical characterization of ZnO nanowire field effect transistors (FETs). Dielectrophoresis technique was used to directly align ZnO nanowires between lithographically prepatterned source and drain electrodes, and spin-coated polyvinylphenol (PVP) polymer thin layer was used as a gate dielectric layer in "top-gate" FET device configuration. The electrical characteristics of the top-gate ZnO nanowire FETs were found to be comparable to the conventional "bottom-gate" nanowire FETs with a SiO2 gate dielectric layer, suggesting the directly-assembled nanowire FET with a polymer gate dielectric layer is a useful device structure of nanowire FETs.

The Electrical Characterization of Single ZnO Nanowries Field-Effect Transistors

2010 ◽  
Vol 654-656 ◽  
pp. 1178-1181
Author(s):  
Hui Feng Li ◽  
Yun Hua Huang ◽  
Xiu Jun Xing ◽  
Jia Su ◽  
Yue Zhang
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Vacuum ◽  
Electrical Characterization ◽  
Current Transport ◽  
Zno Nanowire ◽  
Metal Materials ◽  
Scanning Electron

The electrical properties of single ZnO nanowire were researched in the chamber of a scanning electron microscope under high-vacuum conditions using nanomanipulator and measurement system. The result shows that ZnO nanowire resistivity was about 1.4 Ω•cm with Ohmic contact. The local change of electron density induced by Shottky contacts or Ohmic contact with tip and semiconductor/metal materials significantly affects the current transport through the nanowire. Single ZnO nanowire was configured as field effect transistors (FET) and based on metal tantalum (Ta) as electrodes show a pronounced n-type gate modulation with an electron concentration of ~1.0×1019 cm−3 and an electron mobility of ~52 cm2 /V s at a bias voltage of 1 V.

Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al2O3 Gate Dielectric Fabricated on SiC Substrates

2015 ◽  
Vol 821-823 ◽  
pp. 937-940 ◽  
Author(s):  
Toby Hopf ◽  
Konstantin Vassilevski ◽  
Enrique Escobedo-Cousin ◽  
Peter King ◽  
Nicholas G. Wright ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Atomic Layer ◽  
Epitaxial Graphene ◽  
Vacuum Sublimation ◽  
Layer Deposition ◽  
High K

Top-gated field-effect transistors have been created from bilayer epitaxial graphene samples that were grown on SiC substrates by a vacuum sublimation approach. A high-quality dielectric layer of Al2O3was grown by atomic layer deposition to function as the gate oxide, with an e-beam evaporated seed layer utilized to promote uniform growth of Al2O3over the graphene. Electrical characterization has been performed on these devices, and temperature-dependent measurements yielded a rise in the maximum transconductance and a significant shifting of the Dirac point as the operating temperature of the transistors was increased.

scholarly journals Intense-pulsed-UV-converted perhydropolysilazane gate dielectrics for organic field-effect transistors and logic gates

RSC Advances ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 3169-3175 ◽  
Author(s):  
Han Sol Back ◽  
Min Je Kim ◽  
Jeong Ju Baek ◽  
Do Hwan Kim ◽  
Gyojic Shin ◽  
...  
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
High Performance ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Logic Gates ◽  
Organic Field Effect Transistors ◽  
High Quality ◽  
Complementary Inverters

We fabricated a high-quality perhydropolysilazane (PHPS)-derived SiO2 film by intense pulsed UV irradiation and applied it as a gate dielectric layer in high-performance organic field-effect transistors (OFETs) and complementary inverters.

scholarly journals Biologically sensitive field-effect transistors: from ISFETs to NanoFETs

2016 ◽  
Vol 60 (1) ◽  
pp. 81-90 ◽  
Author(s):  
Vivek Pachauri ◽  
Sven Ingebrandt
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Silicon Nanowire ◽  
Label Free ◽  
Biomolecular Detection ◽  
New Device ◽  
Label Free Detection ◽  
History Of

Biologically sensitive field-effect transistors (BioFETs) are one of the most abundant classes of electronic sensors for biomolecular detection. Most of the time these sensors are realized as classical ion-sensitive field-effect transistors (ISFETs) having non-metallized gate dielectrics facing an electrolyte solution. In ISFETs, a semiconductor material is used as the active transducer element covered by a gate dielectric layer which is electronically sensitive to the (bio-)chemical changes that occur on its surface. This review will provide a brief overview of the history of ISFET biosensors with general operation concepts and sensing mechanisms. We also discuss silicon nanowire-based ISFETs (SiNW FETs) as the modern nanoscale version of classical ISFETs, as well as strategies to functionalize them with biologically sensitive layers. We include in our discussion other ISFET types based on nanomaterials such as carbon nanotubes, metal oxides and so on. The latest examples of highly sensitive label-free detection of deoxyribonucleic acid (DNA) molecules using SiNW FETs and single-cell recordings for drug screening and other applications of ISFETs will be highlighted. Finally, we suggest new device platforms and newly developed, miniaturized read-out tools with multichannel potentiometric and impedimetric measurement capabilities for future biomedical applications.

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