Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al2O3 Gate Dielectric Fabricated on SiC Substrates
2015 ◽
Vol 821-823
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pp. 937-940
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Keyword(s):
Top-gated field-effect transistors have been created from bilayer epitaxial graphene samples that were grown on SiC substrates by a vacuum sublimation approach. A high-quality dielectric layer of Al2O3was grown by atomic layer deposition to function as the gate oxide, with an e-beam evaporated seed layer utilized to promote uniform growth of Al2O3over the graphene. Electrical characterization has been performed on these devices, and temperature-dependent measurements yielded a rise in the maximum transconductance and a significant shifting of the Dirac point as the operating temperature of the transistors was increased.
2018 ◽
Vol 461
◽
pp. 255-259
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2007 ◽
Vol 7
(11)
◽
pp. 4101-4105
2017 ◽
Vol 178
◽
pp. 190-193
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Keyword(s):
2016 ◽
Vol 8
(44)
◽
pp. 29872-29876
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2007 ◽
Vol 7
(11)
◽
pp. 4101-4105
◽