Nanostructured Cd1−xMnxS Films for Spintronics and Optoelectronic Device Applications: Synthesis and Characterization

Nanostructured Cd1−xMnxS (x = 0.3 and 0.4) films were prepared on glass substrates by thermal evaporation. All the films were deposited at 373 K and annealed at 473 K in high vacuum of 2 × 10−6 mbar. The nanostructure films were characterized for composition, structure, morphology, optical and magnetic properties. All the films exhibited wurtzite structure of the host CdS material. AFM studies showed that all the films were in nanocrystalline form with the grain size varying in the range of 25–43 nm. The magnetic susceptibility increased sharply with Mn content 'x'.

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Thickness dependence of AC conductivity in TlSe thin films

Canadian Journal of Physics ◽

10.1139/cjp-2018-0758 ◽

2019 ◽

Vol 97 (11) ◽

pp. 1182-1184

Author(s):

Ugur Saglam ◽

Sahin Yakut ◽

Binnur Karabak ◽

Deniz Bozoglu

Keyword(s):

Thin Films ◽

Ac Conductivity ◽

Room Temperature ◽

Thermal Evaporation ◽

High Vacuum ◽

Low Frequency ◽

Covalent Bond ◽

Tetragonal Symmetry ◽

Glass Substrates ◽

A Chain

Thalium selenide (TlSe), which has a lattice with tetragonal symmetry, is a member of the A3B6 semiconductor group. The structure of TlSe is defined as chains where atoms inside are bonded with an ionic-covalent bond. TlSe thin films were deposited by thermal evaporation under a high vacuum on glass substrates. The structure of TlSe thin films is amorphous with a tetragonal structure. The AC conductivity measurements were operated via the measurements of capacitance and dielectric dissipation (tanδ) at room temperature. AC conductivity values change between 10−11 and 10−6 S/cm at the low-frequency side with decreasing thickness. Two different conduction regions were observed with increasing frequency. The region observed at the low-frequency side can be attributed to the motion of a chain-like part of the lattice, while the region observed at the high-frequency side can be attributed to side groups.

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Synthesis and Characterization of Cu3(Sb1–xAsx)S4 Semiconducting Nanocrystal Alloys with Tunable Properties for Optoelectronic Device Applications

Chemistry of Materials ◽

10.1021/acs.chemmater.6b03850 ◽

2016 ◽

Vol 29 (2) ◽

pp. 573-578 ◽

Cited By ~ 10

Author(s):

Robert B. Balow ◽

Caleb K. Miskin ◽

Mahdi M. Abu-Omar ◽

Rakesh Agrawal

Keyword(s):

Optoelectronic Device ◽

Synthesis And Characterization ◽

Tunable Properties ◽

Device Applications

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TEM and cathodoluminescence of precipitates in II-VI semiconductors

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100104509 ◽

1988 ◽

Vol 46 ◽

pp. 488-489

Author(s):

Joanna L. Batstone

Keyword(s):

Crystal Growth ◽

Band Gap ◽

Local Strain ◽

Wide Band ◽

Optoelectronic Device ◽

Wide Band Gap ◽

Bulk Crystal Growth ◽

Transmission Electron ◽

Device Applications ◽

Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

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X- ray diffraction and dielectric properties of PbSe thin films

Iraqi Journal of Physics (IJP) ◽

10.30723/ijp.v15i34.115 ◽

2019 ◽

Vol 15 (34) ◽

pp. 1-14

Author(s):

Bushra A. Hasan

Keyword(s):

Thin Films ◽

Thermal Activation ◽

Thermal Evaporation ◽

Thermal Activation Energy ◽

Dielectric Constants ◽

Conductivity Measurements ◽

X Ray Diffraction ◽

Thermal Evaporation Method ◽

X Ray ◽

Glass Substrates

Lead selenide PbSe thin films of different thicknesses (300, 500, and 700 nm) were deposited under vacuum using thermal evaporation method on glass substrates. X-ray diffraction measurements showed that increasing of thickness lead to well crystallize the prepared samples, such that the crystallite size increases while the dislocation density decreases with thickness increasing. A.C conductivity, dielectric constants, and loss tangent are studied as function to thickness, frequency (10kHz-10MHz) and temperatures (293K-493K). The conductivity measurements confirm confirmed that hopping is the mechanism responsible for the conduction process. Increasing of thickness decreases the thermal activation energy estimated from Arhinus equation is found to decrease with thickness increasing. The increase of thickness lead to reduce the polarizability α while the increasing of temperature lead to increase α.

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In(Ga)N Nanowire Heterostructures and Optoelectronic Device Applications

Nanoscience &Nanotechnology-Asia ◽

10.2174/2210681211101020123 ◽

2011 ◽

Vol 1 (2) ◽

pp. 123-139

Author(s):

Saeed Fathololoumi ◽

Hieu P. T. Nguyen ◽

Zetian Mi

Keyword(s):

Optoelectronic Device ◽

Nanowire Heterostructures ◽

Device Applications

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In(Ga)N Nanowire Heterostructures and Optoelectronic Device Applications

Nanoscience & Nanotechnology-Asia ◽

10.2174/2210682011101020123 ◽

2011 ◽

Vol 1 (2) ◽

pp. 123-139 ◽

Cited By ~ 3

Author(s):

Saeed Fathololoumi ◽

Hieu P. T. Nguyen ◽

Zetian Mi

Keyword(s):

Optoelectronic Device ◽

Nanowire Heterostructures ◽

Device Applications

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ε-InSe single crystals grown by a horizontal gradient freeze method

CrystEngComm ◽

10.1039/d0ce01271h ◽

2020 ◽

Vol 22 (45) ◽

pp. 7864-7869

Author(s):

Maojun Sun ◽

Wei Wang ◽

Qinghua Zhao ◽

Xuetao Gan ◽

Yuanhui Sun ◽

...

Keyword(s):

Single Crystals ◽

Optoelectronic Device ◽

Indium Selenide ◽

Horizontal Gradient ◽

Device Applications

Indium selenide (InSe) single crystals have been considered as promising candidates for future optical, electrical, and optoelectronic device applications.

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Discotic columnar liquid-crystalline polymer semiconducting materials with high charge-carrier mobility via rational macromolecular engineering

Polymer Chemistry ◽

10.1039/c7py00364a ◽

2017 ◽

Vol 8 (21) ◽

pp. 3286-3293 ◽

Cited By ~ 19

Author(s):

Bin Mu ◽

Xingtian Hao ◽

Jian Chen ◽

Qian Li ◽

Chunxiu Zhang ◽

...

Keyword(s):

Liquid Crystalline ◽

Cost Effective ◽

Crystalline Polymer ◽

Charge Carrier Mobility ◽

Optoelectronic Device ◽

Side Chain ◽

Liquid Crystal Polymers ◽

Semiconducting Materials ◽

Organic Semiconducting Materials ◽

Device Applications

Well-prepared side-chain discotic liquid crystal polymers with shorter spacers in ordered columnar phases are fascinating and promising cost-effective, solution-processable organic semiconducting materials for various potential optoelectronic device applications.

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