Self-Organization of Cobalt-Silicide Nanoislands on Stepped Si(111) as a Function of Growth Method

2008 ◽  
Vol 8 (2) ◽  
pp. 801-805 ◽  
Author(s):  
I. Goldfarb ◽  
M. Levinshtein
Keyword(s):  
Size Effects ◽  
Room Temperature ◽  
Solid Phase ◽  
Self Organization ◽  
Solid Phase Epitaxy ◽  
Silicide Formation ◽  
Reactive Deposition ◽  
Growth Method ◽  
Single Electron Devices ◽  
Growth Methods

When silicides, such as CoSi2, are grown in the form of nanoislands they frequently exhibit nanometer size effects, which can be useful for single electron devices. For such devices, however, lateral self-organization is required. In this work, step-aided self-organization of CoSi2 nanoislands is demonstrated on a vicinal (stepped) Si(111) substrate. Straight and equidistant steps or step-bunches are routinely obtained on the vicinal Si(111), creating almost ideal template for self-organization. Two growth methods were examined: solid-phase epitaxy (SPE), where Co was deposited at room temperature and annealed to promote silicide formation, and reactive deposition epitaxy (RDE) where Co was deposited at elevated temperature. While the latter did not result in any noticeable ordering, due to instantaneous reaction with Si in course of deposition, the former lead to preferential occupation of step-bunch sites by the silicide nanoislands. Furthermore, self-limiting growth caused narrow distribution of island sizes and island–island separation distances.

Formation and Optical Properties of Thin Mg2Ge Films on Si(001) Substrate

2016 ◽  
Vol 247 ◽  
pp. 66-72
Author(s):  
Dmitry L. Goroshko ◽  
Evgeniy A. Chusovitin ◽  
Konstantin Nickolaevich Galkin ◽  
Igor M. Chernev ◽  
Nikolay G. Galkin
Keyword(s):  
Optical Properties ◽  
Room Temperature ◽  
Solid Phase ◽  
Indirect Transition ◽  
Crystalline Layer ◽  
Reactive Deposition ◽  
Optical Functions ◽  
Growth Method ◽  
Film Substrate ◽  
Film Interface

Thin Mg2Ge films were grown using two methods: a co-deposition of Ge and Mg on Si substrate kept at room temperature followed by annealing at 200 °C (solid phase epitaxy – SPE) and reactive deposition epitaxy (RDE) of Ge and Mg on Si at 200 °C. Optical properties of these structures were investigated in the photon energy range of 0.02–6.2 eV. Based on optical functions calculation, it was shown that SPE growth results in formation of a crystalline layer of Mg2Si, which exhibits a strong optical phonon originated from the substrate-film interface. In the case of RDE growth, the amount of Mg2Si is sufficiently lower, but Mg‑Si-Ge compound phonon appears. The estimate of a fundamental indirect transition value in the film is 0.72 eV for SPE growth method and 0.56 eV for RDE due to the ternary compound Mg-Ge-Si at the film-substrate interface.

Initial Stages of Growth of ZnSe on Si

1992 ◽  
Vol 242 ◽  
Author(s):  
R. D. Bringans ◽  
D. K. Biegelsen ◽  
L.-E. Swartz ◽  
F. A. Ponce ◽  
J. C. Tramontana
Keyword(s):  
Zinc Selenide ◽  
Room Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Compound Formation ◽  
Stages Of Growth ◽  
Gaas Films ◽  
Temperature Deposition ◽  
Growth Methods

ABSTRACTZinc selenide films have been grown heteroepitaxially on Si(100) substrates by molecular beam epitaxy. The initial stages of growth are dominated by the reaction of Se and Si atoms to form the compound SiSe2- The compound formation disrupts epitaxy, and several growth methods which avoid this are described and compared. We find that room temperature deposition plus solid phase epitaxy does not lead to significant SiSex formation and yields uniformly thick films which are misoriented with respect to the substrate and contain large regions of twinned ZnSe. The use of an As monolayer on the Si surface before the start of ZnSe growth allows good ZnSe epitaxy without any Si-Se reaction or any misorientation. ZnSe films have also been used as interlayers for GaAs growth on Si. This has allowed us to obtain uniform GaAs films at thicknesses which typically manifest a coalesced island morphology for GaAs grown directly on Si.

GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi2 AND Si/CoSi2/Si HETEROSTRUCTURES

1985 ◽  
Vol 56 ◽  
Author(s):  
B.D. HUNT ◽  
N. LEWIS ◽  
E.L. HALL ◽  
L.G. JTURNER ◽  
L.J. SCHOWALTER ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Growth Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Reactive Deposition ◽  
Ion Channeling ◽  
Formation Method

AbstractThin (<200Å), epitaxial CoSi2 films have been grown on (111) Siwafers in a UHV system using a variety of growth techniques including solid phase epitaxy (SPE), reactive deposition epitaxy (RDE), and molecular beam epitaxy (MBE). SEN and TEN studies reveal significant variations in the epitaxial silicide surface morphology as a function of the sillciqd formation method. Pinhole densities are generally greater than 107 cm-2, although some reduction can be achieved by utilizing proper growth techniques. Si epilayers were deposited over the CoSi2 films inthe temperature range from 550ºC to 800ºC, and the reesuulttinng structures have been characterized using SEM, cross—sectional TEN, and ion channeling measurements. These measurements show that the Si epitaxial quality increases with growth temperature, although the average Si surface roughness and the CoSi2 pinhole density also increase as the growth temperature is raised.

Structure of Iron Silicide film on Si(111) Grown by Solid-Phase Epitaxy and Reactive Deposition Epitaxy

2006 ◽  
Vol 45 (3B) ◽  
pp. 2390-2394 ◽  
Author(s):  
Masuaki Matsumoto ◽  
Kaoru Sugie ◽  
Taizou Kawauchi ◽  
Katsuyuki Fukutani ◽  
Tatsuo Okano
Keyword(s):  
Solid Phase ◽  
Iron Silicide ◽  
Solid Phase Epitaxy ◽  
Silicide Film ◽  
Reactive Deposition

Marker Experiments for the moving Species in Silicides During Solid Phase Epitaxy of Evaporated Si

1983 ◽  
Vol 25 ◽  
Author(s):  
Chuen-Der Lien ◽  
Meir Bartur ◽  
Marc-A. Nicolet
Keyword(s):  
Nuclear Reaction ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Silicide Formation ◽  
Si Substrate ◽  
Marker Position

ABSTRACTEvaporated W, implanted Xe, and implanted 18O were used as markers to study the dominant moving species during (a) solid phase epitaxy (SPE) of evaporated Si, (b) silicide formation, and (c) oxidation of silicides on Si substrate.MeV 4He+ backscattering spectrometry and 18O (p, α)15 N nuclear reaction were used to monitor the evolution of elemental profiles as well as the change in the marker position. In most cases, the dominant moving species in SPE is the same as that observed in the formation and oxidation of that silicide. However, in CrSi2 the dominant moving species is Si during silicide formation, but Cr during SPE or oxidation.

Extended near-IR Spectral Sensitivity and Electroluminescence Properties of Silicon Diode Structure with GaSb/Si Composite Layer

2016 ◽  
Vol 247 ◽  
pp. 61-65 ◽  
Author(s):  
Dmitry L. Goroshko ◽  
Alexander V. Shevlyagin ◽  
Evgeniy Anatolievich Chusovitin ◽  
Konstantin N. Galkin ◽  
Igor M. Chernev ◽  
...  
Keyword(s):  
Spectral Sensitivity ◽  
Wavelength Range ◽  
Room Temperature ◽  
Solid Phase ◽  
Composite Layer ◽  
Solid Phase Epitaxy ◽  
Silicon Matrix ◽  
Near Ir ◽  
Wide Wavelength Range ◽  
Integral Sensitivity

An array of GaSb nanocrystallites (NCs) was formed on Si(001) substrate by solid-phase epitaxy at 500 °C. Owing to the embedded GaSb NCs, p+‑Si/NC‑GaSb/n‑Si mesa diode spectral sensitivity has extended up to 1.6 µm at room temperature, and its integral sensitivity has increased by 4–5% in the wavelength range of 1200–1600 nm, as compared to a conventional Si diode. This result was achieved by embedding only 10 nm of GaSb in the form of NCs inside a silicon matrix. In addition, we could obtain a significant electroluminescence (EL) signal at 120 K in a very wide wavelength range from 1.3 to 2.1 µm (0.95–0.59 eV). The EL spectrum has a broad maximum at 1700 nm (0.73 eV). The threshold pumping current density was as low as 0.75 A/cm2.

Synthesis of β-FeSi 2 Film by Reactive Deposition—Solid Phase Epitaxy

1995 ◽  
Vol 12 (5) ◽  
pp. 301-304 ◽  
Author(s):  
Wang Lianwei ◽  
Shen Qinwo ◽  
Chen Xiangdong ◽  
Lin Xian ◽  
Lin Chenglu ◽  
...  
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Reactive Deposition

Silicon Carbide Solid-Phase Epitaxy on a Microporous Substratum

2012 ◽  
Vol 326-328 ◽  
pp. 243-248 ◽  
Author(s):  
Galina I. Zmievskaya ◽  
Anna L. Bondareva ◽  
V.V. Savchenko ◽  
Tatiana V. Levchenko
Keyword(s):  
Phase Transition ◽  
Computer Simulation ◽  
Silicon Carbide ◽  
Solid State ◽  
Stochastic Model ◽  
Solid Phase ◽  
Inert Gas ◽  
Self Organization ◽  
Solid Phase Epitaxy ◽  
Initial Stage

The action flux of ions of inert gas on the substratum Si (100) leads to porosity into the crystal lattice and self-organization of these defects. The kinetic stochastic model of the phase transition at the initial stage is applied to find distributions of defects in sizes and on their coordinates in the layers. The accumulation of stress is determined by computer simulation. Layers of pores and cracks precede to solid state epitaxy of silicon carbide.

Growth of Epitaxial CoSi2/Si Multilayers

1986 ◽  
Vol 77 ◽  
Author(s):  
B. D. Runt ◽  
N. Lewis ◽  
L. J. Schotalter ◽  
E. L. Hall ◽  
L. G. Turner
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Solid Phase ◽  
Multilayer Structures ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Temperature Growth ◽  
Transmission Electron

ABSTRACTEpitaxial CoSi2/Si multilayers have been grown on Si(111) substrates with up to four bilayers of suicide and Si. To our knowledge, these are the first reported epitaxial metal-semiconductor multilayer structures. The growth of these heterostructures is complicated by pinhole formation in the suicide layers and by nonuniform growth of Si over the suicide films, but these problems can be controlled through nse of proper growth techniques. CoSi2 pinhole formation has been significantly reduced by utilizing a novel solid phase epitaxy technique in which room-temperature-deposited Co/Si bilayers are annealed to 600–650δC to form the suicide layers. Islanding in the Si layers is minimized by depositing a thin (<100Å) Si layer at room temperature with subsequent high temperature growth of the remainder of the Si. Cross-sectional transmission electron microscopy studies demonstrate that these growth procedures dramatically improve the continuity and quality of the CoSi. and Si multilayers.

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