Extended near-IR Spectral Sensitivity and Electroluminescence Properties of Silicon Diode Structure with GaSb/Si Composite Layer

2016 ◽  
Vol 247 ◽  
pp. 61-65 ◽  
Author(s):  
Dmitry L. Goroshko ◽  
Alexander V. Shevlyagin ◽  
Evgeniy Anatolievich Chusovitin ◽  
Konstantin N. Galkin ◽  
Igor M. Chernev ◽  
...  
Keyword(s):  
Spectral Sensitivity ◽  
Wavelength Range ◽  
Room Temperature ◽  
Solid Phase ◽  
Composite Layer ◽  
Solid Phase Epitaxy ◽  
Silicon Matrix ◽  
Near Ir ◽  
Wide Wavelength Range ◽  
Integral Sensitivity

An array of GaSb nanocrystallites (NCs) was formed on Si(001) substrate by solid-phase epitaxy at 500 °C. Owing to the embedded GaSb NCs, p+‑Si/NC‑GaSb/n‑Si mesa diode spectral sensitivity has extended up to 1.6 µm at room temperature, and its integral sensitivity has increased by 4–5% in the wavelength range of 1200–1600 nm, as compared to a conventional Si diode. This result was achieved by embedding only 10 nm of GaSb in the form of NCs inside a silicon matrix. In addition, we could obtain a significant electroluminescence (EL) signal at 120 K in a very wide wavelength range from 1.3 to 2.1 µm (0.95–0.59 eV). The EL spectrum has a broad maximum at 1700 nm (0.73 eV). The threshold pumping current density was as low as 0.75 A/cm2.

scholarly journals Building-up a database of spectro-photometric standards from the UV to the NIR

2009 ◽  
Vol 5 (H15) ◽  
pp. 535-535 ◽  
Author(s):  
J. Vernet ◽  
F. Kerber ◽  
V. Mainieri ◽  
T. Rauch ◽  
F. Saitta ◽  
...  
Keyword(s):  
Wavelength Range ◽  
White Dwarf ◽  
State Of The Art ◽  
Atmospheric Models ◽  
Integral Field Spectroscopy ◽  
Near Ir ◽  
Field Spectroscopy ◽  
Wide Wavelength Range ◽  
Optical Flux ◽  
Integral Field

We present results of a project aimed at establishing a set of 12 spectro-photometric standards over a wide wavelength range from 320 to 2500 nm. Currently no such set of standard stars covering the near-IR is available. Our strategy is to extend the useful range of existing well-established optical flux standards (Oke 1990, Hamuy et al. 1992, 1994) into the near-IR by means of integral field spectroscopy with SINFONI at the VLT combined with state-of-the-art white dwarf stellar atmospheric models (TMAP, Holberg et al. 2008). As a solid reference, we use two primary HST standard white dwarfs GD71 and GD153 and one HST secondary standard BD+17 4708. The data were collected through an ESO “Observatory Programme” over ~40 nights between February 2007 and September 2008.

Self-Organization of Cobalt-Silicide Nanoislands on Stepped Si(111) as a Function of Growth Method

2008 ◽  
Vol 8 (2) ◽  
pp. 801-805 ◽  
Author(s):  
I. Goldfarb ◽  
M. Levinshtein
Keyword(s):  
Size Effects ◽  
Room Temperature ◽  
Solid Phase ◽  
Self Organization ◽  
Solid Phase Epitaxy ◽  
Silicide Formation ◽  
Reactive Deposition ◽  
Growth Method ◽  
Single Electron Devices ◽  
Growth Methods

When silicides, such as CoSi2, are grown in the form of nanoislands they frequently exhibit nanometer size effects, which can be useful for single electron devices. For such devices, however, lateral self-organization is required. In this work, step-aided self-organization of CoSi2 nanoislands is demonstrated on a vicinal (stepped) Si(111) substrate. Straight and equidistant steps or step-bunches are routinely obtained on the vicinal Si(111), creating almost ideal template for self-organization. Two growth methods were examined: solid-phase epitaxy (SPE), where Co was deposited at room temperature and annealed to promote silicide formation, and reactive deposition epitaxy (RDE) where Co was deposited at elevated temperature. While the latter did not result in any noticeable ordering, due to instantaneous reaction with Si in course of deposition, the former lead to preferential occupation of step-bunch sites by the silicide nanoislands. Furthermore, self-limiting growth caused narrow distribution of island sizes and island–island separation distances.

Growth of Epitaxial CoSi2/Si Multilayers

1986 ◽  
Vol 77 ◽  
Author(s):  
B. D. Runt ◽  
N. Lewis ◽  
L. J. Schotalter ◽  
E. L. Hall ◽  
L. G. Turner
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Solid Phase ◽  
Multilayer Structures ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Temperature Growth ◽  
Transmission Electron

ABSTRACTEpitaxial CoSi2/Si multilayers have been grown on Si(111) substrates with up to four bilayers of suicide and Si. To our knowledge, these are the first reported epitaxial metal-semiconductor multilayer structures. The growth of these heterostructures is complicated by pinhole formation in the suicide layers and by nonuniform growth of Si over the suicide films, but these problems can be controlled through nse of proper growth techniques. CoSi2 pinhole formation has been significantly reduced by utilizing a novel solid phase epitaxy technique in which room-temperature-deposited Co/Si bilayers are annealed to 600–650δC to form the suicide layers. Islanding in the Si layers is minimized by depositing a thin (<100Å) Si layer at room temperature with subsequent high temperature growth of the remainder of the Si. Cross-sectional transmission electron microscopy studies demonstrate that these growth procedures dramatically improve the continuity and quality of the CoSi. and Si multilayers.

Effect of Buried Surface Structure on Solid Phase Epitaxy of GE on SI (111)-7×7

1993 ◽  
Vol 317 ◽  
Author(s):  
Olof C. Hellman
Keyword(s):  
Thin Film ◽  
Surface Structure ◽  
Surface Reconstruction ◽  
Silicon Surface ◽  
Room Temperature ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Rich Phase ◽  
One Dimensional ◽  
Surface Steps

ABSTRACTWe study the crystallization of a thin film of amorphous Ge deposited at room temperature on Si (111). Features of the silicon surface buried beneath the Ge film are shown to affect the rate of crystallization. In particular, solid phase epitaxy is observed to be enhanced at surface steps and defects in the surface reconstruction. It is further shown that one-dimensional crystallization patterns can be caused by impurity-Mediated crystallization. Precipitates of an impurity rich phase migrate in the plane of the film, leaving behind a crystalline trail. The Migration path of these precipitates is also dependent on the buried surface structure.

Initial Stages of Growth of ZnSe on Si

1992 ◽  
Vol 242 ◽  
Author(s):  
R. D. Bringans ◽  
D. K. Biegelsen ◽  
L.-E. Swartz ◽  
F. A. Ponce ◽  
J. C. Tramontana
Keyword(s):  
Zinc Selenide ◽  
Room Temperature ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Compound Formation ◽  
Stages Of Growth ◽  
Gaas Films ◽  
Temperature Deposition ◽  
Growth Methods

ABSTRACTZinc selenide films have been grown heteroepitaxially on Si(100) substrates by molecular beam epitaxy. The initial stages of growth are dominated by the reaction of Se and Si atoms to form the compound SiSe2- The compound formation disrupts epitaxy, and several growth methods which avoid this are described and compared. We find that room temperature deposition plus solid phase epitaxy does not lead to significant SiSex formation and yields uniformly thick films which are misoriented with respect to the substrate and contain large regions of twinned ZnSe. The use of an As monolayer on the Si surface before the start of ZnSe growth allows good ZnSe epitaxy without any Si-Se reaction or any misorientation. ZnSe films have also been used as interlayers for GaAs growth on Si. This has allowed us to obtain uniform GaAs films at thicknesses which typically manifest a coalesced island morphology for GaAs grown directly on Si.

Formation of Epitaxial Soi Structures Using Alkaline Earth Fltuoride Films

1985 ◽  
Vol 53 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Tanemasa Asano
Keyword(s):  
Alkaline Earth ◽  
Room Temperature ◽  
Solid Phase ◽  
Growth Conditions ◽  
Solid Phase Epitaxy ◽  
Si Substrates ◽  
Structural And Electrical Properties ◽  
Earth Fluoride ◽  
Alkaline Earth Fluoride ◽  
Device Applications

ABSTRACTRecent progress in the research of heteroepitaxial SOI structures such as Si/CaF2/Si and Ge/CaF2/Si structures is reviewed. Structural and electrical properties of alkaline earth fluoride films on Si substrates are first discussed. Growth conditions, structural properties, and device applications of the Si/CaF2/Si structures are then presented. It is shown that a predeposition technique, in which a thin Si layer is deposited at room temperature prior to the growth of a thick film at elevated temperature, is effective to improve the crystalline quality and the surface morphology of the film. Usefulness of solid phase epitaxy to obtain high quality films is also demonstrated. Finally, it is shown that the predeposition technique is also useful in formation of Ge/CaF2/Si structures.

Solid-Phase Epitaxial Regrowth and Dopant Activation of Arsenic. Implanted Metastable Pseudomorphic Ge0.08Si0.92 AND GeO.16SiO.84 ON Si(100)

1995 ◽  
Vol 379 ◽  
Author(s):  
D.Y.C. Lie ◽  
J.H. Song ◽  
M.-A. Nicolet ◽  
N.D. Theodore ◽  
J. Candelaria ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Room Temperature ◽  
Solid Phase ◽  
Strain Relaxation ◽  
Chemical Vapor ◽  
Layer By Layer ◽  
Solid Phase Epitaxy ◽  
Epitaxial Regrowth ◽  
Control Samples

ABSTRACTMetastable pseudomorphic GexSi1−x (x=8%,16%) films were deposited on p-Si(100) substrates by chemical-vapor-deposition and then implanted at room temperature with 90 keV arsenic ions to a dose of 1.5×1015/cm2. The implantation amorphizes approximately the top 125 nm of the 145 nm-thick GeSi layers. The Si-GeSi interfaces remain sharp after implantation. Implanted and non-implanted GeSi samples, together with implanted Si control samples, were subsequently annealed simultaneously by rapid thermal annealing in a nitrogen ambient at 600,700,800 × for 10,20,40s at each temperature. The implanted samples undergo layer-by-layer solid-phase epitaxial regrowth during annealing at or above 600 ×C. The amorphized and regrown GeSi layers are always fully relaxed with a very high density of dislocations (1010-1011/cm2). At a fixed annealing temperature, strain relaxation of an implanted GeSi film is substantially more extensive than that of a non-implanted one. About 50-90% of the implanted arsenic ions become electrically active after the completion of solid-phase epitaxy. The percentages of arsenic ions that are activated in the Si control samples are generally higher than those in GeSi. The room-temperature sheet electron mobility in GeSi is roughly 30% lower than that in Si for a given sheet electron concentration. We conclude that metastable GeSi on Si(100) amorphized by arsenic ions and recrystallized by solid-phase epitaxy cannot recover both its crystallinity and its pseudomorphic strain under rapid thermal annealing.

Solid Phase Epitaxy of Implanted Silicon by Electron Irradiation at Room Temperature

1988 ◽  
Vol 100 ◽  
Author(s):  
G. Lulli ◽  
P. G. Merli ◽  
M. Vittori Antisari
Keyword(s):  
Electron Irradiation ◽  
Cross Sections ◽  
Room Temperature ◽  
Diffusion Length ◽  
Solid Phase ◽  
Basic Mechanism ◽  
Radiation Defects ◽  
Solid Phase Epitaxy ◽  
Transmission Electron

ABSTRACTSolid-phase epitaxy of implanted Si is observed at room temperature during in situ electron irradiation in a Transmission Electron Microscope. Results obtained from irradiation of cross sections of samples containing different doping species show that: i) the basic mechanism of the process is the migration and recombination at the amorphous-crystalline interface of radiation defects coming both from the amorphous and crystalline side; ii) the diffusion length of such defects is of the order of 40 nm; iii) the regrowth rate is impurity dependent: a factor two exists between the faste

Sign in / Sign up

Export Citation Format

Share Document