Silicon Carbide Solid-Phase Epitaxy on a Microporous Substratum

2012 ◽  
Vol 326-328 ◽  
pp. 243-248 ◽  
Author(s):  
Galina I. Zmievskaya ◽  
Anna L. Bondareva ◽  
V.V. Savchenko ◽  
Tatiana V. Levchenko
Keyword(s):  
Phase Transition ◽  
Computer Simulation ◽  
Silicon Carbide ◽  
Solid State ◽  
Stochastic Model ◽  
Solid Phase ◽  
Inert Gas ◽  
Self Organization ◽  
Solid Phase Epitaxy ◽  
Initial Stage

The action flux of ions of inert gas on the substratum Si (100) leads to porosity into the crystal lattice and self-organization of these defects. The kinetic stochastic model of the phase transition at the initial stage is applied to find distributions of defects in sizes and on their coordinates in the layers. The accumulation of stress is determined by computer simulation. Layers of pores and cracks precede to solid state epitaxy of silicon carbide.

STOCHASTIC MOLECULAR DYNAMICS OF FORMATION OF POROSITY NANOSTRUCTURES AND CONDENSATION CLUSTERS

2020 ◽  
Author(s):  
G. I. Zmievskaya ◽  
Keyword(s):  
Phase Transition ◽  
Molecular Dynamics ◽  
Computer Simulation ◽  
Kinetic Theory ◽  
Discharge Plasma ◽  
Vapor Condensation ◽  
Inert Gas ◽  
Initial Stage

Computer simulation of porosity nucleation during implantation of inert gas ions and vapor condensation in a discharge plasma is based on the equations of the kinetic theory of the initial stage of the phase transition - fluctuation nucleation.

scholarly journals Application of Computer Simulation to Study the Features of the Austenite Isothermal Transformation in Steels

2019 ◽  
Vol 1 (1) ◽  
pp. 1
Author(s):  
Yu.V. Yudin ◽  
M.V. Maisuradze ◽  
A.A. Kuklina ◽  
P.D. Lebedev
Keyword(s):  
Phase Transition ◽  
Computer Simulation ◽  
Solid State ◽  
Isothermal Transformation ◽  
Avrami Equation ◽  
Kinetic Curves ◽  
Simulation Results ◽  
Experimental Kinetics ◽  
Kinetics Of ◽  
New Phase

An algorithm was developed for the simulation of a phase transition in solid state whichmakes it possible to obtain the kinetic curves of transformation under different initialconditions (the number and arrangement of new phase nuclei, the distance betweenthe nearest nuclei). The simulation results were analyzed using the Kolmogorov-Johnson-Mehl-Avrami equation and the corresponding coefficients were determined.The correlation between the simulation results and the experimental kinetics of theaustenite isothermal transformation in alloyed steels was shown.

The Effect of Hydrogen on the Kinetics of Solid Phase Epitaxy in Amorphous Silicon

1990 ◽  
Vol 205 ◽  
Author(s):  
J. A. Roth ◽  
G. L. Olson ◽  
D. C. Jacobson ◽  
J. M. Poate ◽  
C. Kirschbaum
Keyword(s):  
Growth Rate ◽  
Solid Phase ◽  
Intrinsic Value ◽  
Amorphous Layer ◽  
Inert Gas ◽  
Solid Phase Epitaxy ◽  
Depth Profiles ◽  
Kinetics Of ◽  
Crystal Interface ◽  
Good Agreement

AbstractThis paper discusses the intrusion of H into a-Si layers during solid phase epitaxy and the effect of this H on the growth kinetics. We show that during annealing in the presence of water vapor, H is continuously generated at the oxidizing a-Si surface and diffuses into the amorphous layer, where it causes a reduction in the epitaxial growth rate. The measured variation of growth rate with the depth of the amorphous/crystal interface is correlated with the concentration of H at the interface. The diffusion coefficient for H in a-Si is determined by comparing measured depth profiles with calculated values. Hydrogen intrusion is observed even in layers annealed in vacuum and in inert gas ambients. Thin (<;5000 Åthick) a-Si layers are especially susceptible to this effect, but we show that in spite of the presence of H the activation energy for SPE derived earlier from thin-layer data is in good agreement with the intrinsic value obtained from thick, hydrogen-free layers.

Process and Mechanism of CoSi2/Si Solid Phase Epitaxy by Multilayer Reaction

1999 ◽  
Vol 580 ◽  
Author(s):  
Bing-Zong Li ◽  
Xin-Ping Qu ◽  
Guo-Ping Ru ◽  
Ning Wang ◽  
Paul Chu
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Solid Phase Epitaxy ◽  
Initial Stage ◽  
Vital Effect ◽  
Amorphous Si ◽  
Kinetics Of ◽  
State Amorphization

AbstractA multilayer structure of Co/a-Si/Ti/Si(100) together with Co/Ti/Si(100) is applied to investigate the process and mechanism of CoSi2 epitaxial growth on a Si(100) substrate. The experimental results show that by adding an amorphous Si layer with a certain thickness, the epitaxial quality of CoSi2 is significantly improved. A multi-element amorphous layer is formed by a solid state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si and limits the supply of Co atoms. It has a vital effect on the multilayer reaction kinetics, and the epitaxial growth of CoSi2 on Si. The kinetics of the CoSi2 growth process from multilayer reactions is investigated.

Solid phase epitaxy of amorphous silicon carbide: Ion fluence dependence

2004 ◽  
Vol 96 (3) ◽  
pp. 1451-1457 ◽  
Author(s):  
In-Tae Bae ◽  
Manabu Ishimaru ◽  
Yoshihiko Hirotsu ◽  
Kurt E. Sickafus
Keyword(s):  
Silicon Carbide ◽  
Amorphous Silicon ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Silicon Carbide ◽  
Fluence Dependence

Self-Organization of Cobalt-Silicide Nanoislands on Stepped Si(111) as a Function of Growth Method

2008 ◽  
Vol 8 (2) ◽  
pp. 801-805 ◽  
Author(s):  
I. Goldfarb ◽  
M. Levinshtein
Keyword(s):  
Size Effects ◽  
Room Temperature ◽  
Solid Phase ◽  
Self Organization ◽  
Solid Phase Epitaxy ◽  
Silicide Formation ◽  
Reactive Deposition ◽  
Growth Method ◽  
Single Electron Devices ◽  
Growth Methods

When silicides, such as CoSi2, are grown in the form of nanoislands they frequently exhibit nanometer size effects, which can be useful for single electron devices. For such devices, however, lateral self-organization is required. In this work, step-aided self-organization of CoSi2 nanoislands is demonstrated on a vicinal (stepped) Si(111) substrate. Straight and equidistant steps or step-bunches are routinely obtained on the vicinal Si(111), creating almost ideal template for self-organization. Two growth methods were examined: solid-phase epitaxy (SPE), where Co was deposited at room temperature and annealed to promote silicide formation, and reactive deposition epitaxy (RDE) where Co was deposited at elevated temperature. While the latter did not result in any noticeable ordering, due to instantaneous reaction with Si in course of deposition, the former lead to preferential occupation of step-bunch sites by the silicide nanoislands. Furthermore, self-limiting growth caused narrow distribution of island sizes and island–island separation distances.

scholarly journals The Li2SO4–Na2SO4 System for Thermal Energy Storage

Materials ◽  
2019 ◽  
Vol 12 (22) ◽  
pp. 3658 ◽  
Author(s):  
Stefania Doppiu ◽  
Jean-Luc Dauvergne ◽  
Angel Serrano ◽  
Elena Palomo del Barrio
Keyword(s):  
Phase Transition ◽  
Energy Storage ◽  
Solid State ◽  
Theoretical Analysis ◽  
Thermal Energy ◽  
Thermal Energy Storage ◽  
Solid Phase ◽  
Eutectoid Reaction ◽  
Durability Analysis ◽  
Solid Phase Transition

In this paper, the system Li2SO4–Na2SO4 is proposed as a candidate material for thermal energy storage applications at high temperatures (450–550 °C). Depending on the composition, the thermal energy can be stored by using a eutectoid reaction and solid–solid phase transition. In these types of systems, all the components (reagent and products) are in the solid state. This work includes the theoretical analysis (based on the Calphad method) of the system selected obtaining all the theoretical parameters (for example, enthalpies of reaction, transition temperatures, volume expansion, and the heat capacities) necessary to determine the theoretical performance in terms of thermal energy storage. The theoretical analysis allowed to identify two compositions (Li2SO4/Na2SO4 79/21 and 50/50) in the phase diagram with the most promising theoretical enthalpy of transformation (270 J/g and 318 J/g, respectively) corresponding to a eutectoid reaction and a solid–solid phase transition (stoichiometric compound LiNaSO4). The experimental analysis carried out allowed to confirm the great potential of this system for TES application even if some discrepancies with the theoretical calculation have been observed experimentally (energy densities lower than expected). For the two compositions studied, 79/21 and 50/50, the enthalpies of reaction are 185 J/g and 160 J/g, respectively. The reactivity of the system was tested under different experimental conditions preparing materials with a different degree of nanocrystallization to favor the diffusion in the solid state, testing the reactivity of the materials under controlled atmosphere and under air, and performing preliminary durability analysis (cycling behavior up to 20 cycles) to test the stability and reversibility.

Metastable Sic and SiGeC Alloys by Carbon Implantation and Solid Phase Epitaxy

1992 ◽  
Vol 280 ◽  
Author(s):  
J. W. Strane ◽  
W. J. Edwards ◽  
J. W. Mayer ◽  
H. S. Stain ◽  
B. R. Lee ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Ion Implantation ◽  
Vibrational Mode ◽  
Solid Phase ◽  
Metastable Phase ◽  
Diamond Lattice ◽  
Epitaxial Layers ◽  
Loss Of Stability ◽  
Solid Phase Epitaxy ◽  
Solid Phase Regrowth

ABSTRACTWe demonstrate the formation of metastable Si1-yCy and Si1-y-xGexCy alloys by C ion implantation and solid phase epitaxial regrowth. Carbon was introduced into Si and SiGe layers by 5, 12 and 25 keV implants to achieve nearly uniform profiles of 0.7 and 1.4 at.% C. The 0.7 at.% C specimens exhibit the highest quality epitaxial layers after SPE regrowth, whereas in higher C concentration specimens solid phase regrowth was impeded. The localized vibrational mode of C occupying substitutional lattice sites in the diamond lattice provides a signature of the metastable phase and is used to monitor the loss of stability due to precipitation of silicon carbide. The Sic and SiGeC alloys retained substitutional carbon during 30 minute isochronal anneals up to 850°C.

Non-Alloyed Ohmic Contacts to n-GaAs Using Epitaxial Ge Layers

1985 ◽  
Vol 54 ◽  
Author(s):  
T. Sawada ◽  
W. X. Chen ◽  
E. D. Marshall ◽  
K. L. Kavanagh ◽  
T. F. Kuech ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Solid State ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Solid State Reactions ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Shallow Junctions

ABSTRACTAlloyed ohmic contacts (i.e. Au-Ge-Ni) to n-GaAs lead to non-planar interfaces which are unsuitable for devices with shallow junctions and small dimensions. In this study, the fabrication of non-alloyed ohmic contacts (via solid state reactions) is investigated. A layered structure involving the solid phase epitaxy of Ge using a transport medium (PdGe) is shown to produce low (1 — 5 × 10∼6Ω cm2) and reproducible values of contact resistivity. The resultant interface is shown to be abrupt by cross-sectional transmission electron microscopy.

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