Electrical Characterization of Composition Modulated In1−xSbx Nanowire Field Effect Transistors by Scanning Gate Microscopy

2010 ◽  
Vol 10 (10) ◽  
pp. 6779-6782 ◽  
Author(s):  
A. A. Martinez-Morales ◽  
M. Penchev ◽  
J. Zhong ◽  
X. Jing ◽  
K. V. Singh ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Scanning Gate Microscopy ◽  
Scanning Gate

Electrical characterization of 2D materials-based field-effect transistors

2D Materials ◽  
2020 ◽  
Vol 8 (1) ◽  
pp. 012002 ◽  
Author(s):  
Sekhar Babu Mitta ◽  
Min Sup Choi ◽  
Ankur Nipane ◽  
Fida Ali ◽  
Changsik Kim ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
2D Materials ◽  
Electrical Characterization

Fabrication and Electrical Characterization of Lambda DNA Field Effect Transistors

2007 ◽  
Author(s):  
Jong-Seung Hwang ◽  
Maeng Ho Son ◽  
Sung Woo Hwang ◽  
Doyeol Ahn
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Lambda Dna

The Electrical Characterization of Single ZnO Nanowries Field-Effect Transistors

2010 ◽  
Vol 654-656 ◽  
pp. 1178-1181
Author(s):  
Hui Feng Li ◽  
Yun Hua Huang ◽  
Xiu Jun Xing ◽  
Jia Su ◽  
Yue Zhang
Keyword(s):  
Ohmic Contact ◽  
Field Effect ◽  
Field Effect Transistors ◽  
High Vacuum ◽  
Electrical Characterization ◽  
Current Transport ◽  
Zno Nanowire ◽  
Metal Materials ◽  
Scanning Electron

The electrical properties of single ZnO nanowire were researched in the chamber of a scanning electron microscope under high-vacuum conditions using nanomanipulator and measurement system. The result shows that ZnO nanowire resistivity was about 1.4 Ω•cm with Ohmic contact. The local change of electron density induced by Shottky contacts or Ohmic contact with tip and semiconductor/metal materials significantly affects the current transport through the nanowire. Single ZnO nanowire was configured as field effect transistors (FET) and based on metal tantalum (Ta) as electrodes show a pronounced n-type gate modulation with an electron concentration of ~1.0×1019 cm−3 and an electron mobility of ~52 cm2 /V s at a bias voltage of 1 V.

Fabrication and Characterization of Directly-Assembled ZnO Nanowire Field Effect Transistors with Polymer Gate Dielectrics

2007 ◽  
Vol 7 (11) ◽  
pp. 4101-4105
Author(s):  
Ahnsook Yoon ◽  
Woong-Ki Hong ◽  
Takhee Lee
Keyword(s):  
Dielectric Layer ◽  
Field Effect ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Electrical Characterization ◽  
Electrical Characteristics ◽  
Zno Nanowire ◽  
Device Structure

We report the fabrication and electrical characterization of ZnO nanowire field effect transistors (FETs). Dielectrophoresis technique was used to directly align ZnO nanowires between lithographically prepatterned source and drain electrodes, and spin-coated polyvinylphenol (PVP) polymer thin layer was used as a gate dielectric layer in "top-gate" FET device configuration. The electrical characteristics of the top-gate ZnO nanowire FETs were found to be comparable to the conventional "bottom-gate" nanowire FETs with a SiO2 gate dielectric layer, suggesting the directly-assembled nanowire FET with a polymer gate dielectric layer is a useful device structure of nanowire FETs.

Scanning gate microscopy of copper phthalocyanine field effect transistors

2007 ◽  
Vol 91 (19) ◽  
pp. 192113 ◽  
Author(s):  
Nobuyuki Aoki ◽  
Kouhei Sudou ◽  
Kazuya Okamoto ◽  
Jonathan P. Bird ◽  
Yuichi Ochiai
Keyword(s):  
Field Effect ◽  
Copper Phthalocyanine ◽  
Field Effect Transistors ◽  
Scanning Gate Microscopy ◽  
Scanning Gate
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