Deposition and Thermal Characterization of Nano-Structured Aluminum Nitride Thin Film on Cu–W Substrate for High Power Light Emitting Diode Package

2014 ◽  
Vol 14 (8) ◽  
pp. 5824-5827 ◽  
Author(s):  
Hyun Min Cho ◽  
Min-Sun Kim
Keyword(s):  
Thin Film ◽  
Aluminum Nitride ◽  
High Power ◽  
Light Emitting Diode ◽  
Thermal Characterization ◽  
Light Emitting

Thermal Resistance Analysis of High Power Light Emitting Diode Using Aluminum Nitride Thin Film-Coated Copper Substrates as Heat Sink

2014 ◽  
Vol 136 (3) ◽  
Author(s):  
S. Shanmugan ◽  
D. Mutharasu
Keyword(s):  
Thin Film ◽  
Aluminum Nitride ◽  
Thermal Resistance ◽  
High Power ◽  
Heat Sink ◽  
Light Emitting Diode ◽  
Thermal Interface Material ◽  
Circuit Board ◽  
Light Emitting ◽  
Cu Substrate

AlN thin film was coated over Cu substrate (575 mm2) with 400 nm thickness using DC sputtering for thermal interface material (TIM) application. Aluminum Nitride (AlN)-coated Cu substrate (AlN/Cu) was used as a heat sink for 3-W green light emitting diode (LED). The thermal transient curve was recorded for given LED attached with bare Cu and AlN-coated Cu substrate at three different driving currents. LED attached on AlN/Cu showed the reduced raise in junction temperature (TJ) by 2.59 °C at 700 mA. The LED/TIM/AlN/Cu boundary condition was not supported to reduce the TJ. The total thermal resistance (Rth-tot) was reduced for AlN-coated Cu substrate at 350 mA. The thermal resistance between metal core printed circuit board and Cu substrate (Rth-b-hs) was also observed as low for AlN-coated Cu substrates compared with other boundary conditions measured at 700 mA. The observed results were supported for the use of AlN thin film as TIM in high power LEDs.

Fabrication and Characterization of Poly(3-hexylthiophene) Thin Film Photovoltaic Device and Light Emitting Diode

2009 ◽  
Author(s):  
Lim Lih Wei ◽  
Khaulah Sulaiman ◽  
Swee-Ping Chia ◽  
Kurunathan Ratnavelu ◽  
Muhamad Rasat Muhamad
Keyword(s):  
Thin Film ◽  
Light Emitting Diode ◽  
Photovoltaic Device ◽  
Light Emitting ◽  
Fabrication And Characterization

Thermal characterization of single-die and multi-die high power light-emitting diodes

2008 ◽  
Author(s):  
A. Keppens ◽  
D. De Smeyter ◽  
W. R. Ryckaert ◽  
G. Deconinck ◽  
P. Hanselaer
Keyword(s):  
High Power ◽  
Light Emitting Diodes ◽  
Thermal Characterization ◽  
Light Emitting

Characterization and Elimination of Forward Snapback Defects in GaAs Light Emitting Diodes

1996 ◽  
Author(s):  
J. Zimmer ◽  
D. Nielsen ◽  
T.A. Anderson ◽  
M. Schade ◽  
N. Saha ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Light Emitting Diode ◽  
Elevated Concentration ◽  
Forward Voltage ◽  
Light Emitting ◽  
Intermittent Yield ◽  
Si Doped ◽  
Secondary Ion ◽  
Furnace Pressure

Abstract The p-n junction of a GaAs light emitting diode is fabricated using liquid phase epitaxy (LPE). The junction is grown on a Si doped (~1018/cm3) GaAs substrate. Intermittent yield loss due to forward voltage snapback was observed. Historically, out of specification forward voltage (Vf) parameters have been correlated to abnormalities in the junction formation. Scanning electron (SEM) and optical microscopy of cleaved and stained samples revealed a continuous layer of material approximately 2.5 to 3.0 urn thick at the n-epi/substrate interface. Characterization of a defective wafer via secondary ion mass spectroscopy (SIMS) revealed an elevated concentration of O throughout the region containing the defect. X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) data taken from a wafer prior to growth of the epi layers did not reveal any unusual oxidation or contamination. Extensive review of the processing data suggested LPE furnace pressure was the obvious source of variability. Processing wafers through the LPE furnace with a slight positive H2 gas pressure has greatly reduced the occurrence of this defect.

scholarly journals Implantable Optrode Array for Optogenetic Modulation and Electrical Neural Recording

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 725
Author(s):  
Saeyeong Jeon ◽  
Youjin Lee ◽  
Daeho Ryu ◽  
Yoon Kyung Cho ◽  
Yena Lee ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Neural Recording ◽  
Electrophysiological Recording ◽  
Light Emitting ◽  
Technological Advances ◽  
Neuroscience Research ◽  
Cell Type Specific ◽  
Novel Design

During the last decade, optogenetics has become an essential tool for neuroscience research due to its unrivaled feature of cell-type-specific neuromodulation. There have been several technological advances in light delivery devices. Among them, the combination of optogenetics and electrophysiology provides an opportunity for facilitating optogenetic approaches. In this study, a novel design of an optrode array was proposed for realizing optical modulation and electrophysiological recording. A 4 × 4 optrode array and five-channel recording electrodes were assembled as a disposable part, while a reusable part comprised an LED (light-emitting diode) source and a power line. After the characterization of the intensity of the light delivered at the fiber tips, in vivo animal experiment was performed with transgenic mice expressing channelrhodopsin, showing the effectiveness of optical activation and neural recording.

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