Thermal Resistance Analysis of High Power Light Emitting Diode Using Aluminum Nitride Thin Film-Coated Copper Substrates as Heat Sink

2014 ◽  
Vol 136 (3) ◽  
Author(s):  
S. Shanmugan ◽  
D. Mutharasu
Keyword(s):  
Thin Film ◽  
Aluminum Nitride ◽  
Thermal Resistance ◽  
High Power ◽  
Heat Sink ◽  
Light Emitting Diode ◽  
Thermal Interface Material ◽  
Circuit Board ◽  
Light Emitting ◽  
Cu Substrate

AlN thin film was coated over Cu substrate (575 mm2) with 400 nm thickness using DC sputtering for thermal interface material (TIM) application. Aluminum Nitride (AlN)-coated Cu substrate (AlN/Cu) was used as a heat sink for 3-W green light emitting diode (LED). The thermal transient curve was recorded for given LED attached with bare Cu and AlN-coated Cu substrate at three different driving currents. LED attached on AlN/Cu showed the reduced raise in junction temperature (TJ) by 2.59 °C at 700 mA. The LED/TIM/AlN/Cu boundary condition was not supported to reduce the TJ. The total thermal resistance (Rth-tot) was reduced for AlN-coated Cu substrate at 350 mA. The thermal resistance between metal core printed circuit board and Cu substrate (Rth-b-hs) was also observed as low for AlN-coated Cu substrates compared with other boundary conditions measured at 700 mA. The observed results were supported for the use of AlN thin film as TIM in high power LEDs.

Analysis of ZnO Thin Film as Thermal Interface Material for High Power Light Emitting Diode Application

2016 ◽  
Vol 138 (1) ◽  
Author(s):  
S. Shanmugan ◽  
O. Zeng Yin ◽  
P. Anithambigai ◽  
D. Mutharasu
Keyword(s):  
Thin Film ◽  
Thermal Resistance ◽  
Heat Sink ◽  
Light Emitting Diode ◽  
Thermal Interface Material ◽  
Zno Thin Film ◽  
Thermal Interface ◽  
Light Emitting ◽  
Thermal Paste ◽  
Cu Substrates

All solid-state lighting products produce heat which should be removed by use of a heat sink. Since the two mating surfaces of light emitting diode (LED) package and heat sink are not flat, a thermal interface material (TIM) must be applied between them to fill the gaps resulting from their surface roughness and lack of coplanarity. The application of a traditional TIM may squeeze out when pressure is applied to join the surfaces and hence a short circuit may result. To avoid such a problem, a thin solid film based TIM has been suggested. In this study, a zinc oxide (ZnO) thin film was coated on Cu substrates and used as the TIM. The ZnO thin film coated substrates were used as heat sink purposes in this study. The prepared heat sink was tested with 3 W green LED and the observed results were compared with the results of same LED measured at bare and commercial thermal paste coated Cu substrates boundary conditions. The influence of interface material thickness on total thermal resistance (Rth-tot), rise in junction temperature (TJ), and optical properties of LED was analyzed. A noticeable reduction in Rth-tot (5.92 K/W) as well as TJ (ΔTJ = 11.83 °C) was observed for 800 nm ZnO thin film coated Cu substrates boundary conditions when compared with bare and thermal paste coated Cu substrates tested at 700 mA. Change in TJ influenced the thermal resistance of ZnO interface material. Improved lux level and decreased correlated color temperature (CCT) were also observed with ZnO coated Cu substrates.

Reduction of Thermal Resistance and Optical Power Loss Using Thin-Film Light-Emitting Diode (LED) Structure

2015 ◽  
Vol 62 (11) ◽  
pp. 6925-6933 ◽  
Author(s):  
Huan Ting Chen ◽  
Yuk Fai Cheung ◽  
Hoi Wai Choi ◽  
Siew Chong Tan ◽  
S. Y. Hui
Keyword(s):  
Thin Film ◽  
Thermal Resistance ◽  
Power Loss ◽  
Light Emitting Diode ◽  
Optical Power ◽  
Light Emitting

Manufacture and Evaluation of Light Emitting Diode Package Substrate Using Flexible Printed Circuit Board

2015 ◽  
Vol 15 (10) ◽  
pp. 7578-7581
Author(s):  
Jung-Kab Park ◽  
Jin-Ha Shin ◽  
Mun-Gi Jung ◽  
Tomabechi Shigehisa ◽  
Hwa-Sun Park ◽  
...  
Keyword(s):  
Thermal Resistance ◽  
Light Emitting Diode ◽  
Thermal Conductance ◽  
Polyimide Film ◽  
Luminous Efficiency ◽  
Circuit Board ◽  
Light Sources ◽  
Thermal Shock Test ◽  
Light Emitting ◽  
Au Electrode

Unlike other light sources such as fluorescent lamps and incandescent bulbs, light-emitting diodes (LED) convert 70∼80% of energy into heat. If the heat produced an LED chip is not effectively released, its luminous efficiency and lifespan are reduced. Therefore, as a method effectively release heat, an LED PKG substrate containing a heat-releasing material with excellent thermal conductance was fabricated, and its thermal resistance and luminous efficiency were analyzed. In this experiment, a thin polyimide film with excellent ductility was used to fabricate the LED PKG substrate. A 35-μm-thick Cu foil with excellent thermal conductance was subjected to high temperature and pressure and attached to both sides of the polyimide film. By electroplating Ag or Au, which has excellent thermal conductance, for us as the electrode and heat-releasing material, LED PKG substrate was fabricated with a thickness of approximately 170 μm. (−40 °C → RT → 120 °C). The results revealed that the LED PKG substrate having a Ag electrode with excellent thermal conductance had an excellent thermal resistance of approximately 4.2 °C/W (Au electrode: 5.6 °C/W). The luminous flux after 100 cycles in the thermal shock test was reduced by approximately 0.09% (Au electrode: 2.77%), indicating that the LED PKG substrate had excellent thermal resistance without any mechanical and material defects in a rapid-temperature-changing environment. The advantages and excellent thermal resistance can be exploited in cellular phones and LCD panels, and heat-releasing problems in thin panels be solved.

scholarly journals Thermal performance of heat sink with fluid pockets for high power light emitting diode

2017 ◽  
Vol 14 (4) ◽  
pp. 4846-4862
Author(s):  
Sangmesh ◽  
◽  
Gopalakrishna Keshava Narayana ◽  
Manjunath Shiraganhalli Honnaiah ◽  
Krishna Venkatesh ◽  
...  
Keyword(s):  
Thermal Performance ◽  
High Power ◽  
Heat Sink ◽  
Light Emitting Diode ◽  
Light Emitting

Numerical Analysis for Thermal Performance of High Power Multi-Chip LED Packaging

2010 ◽  
Vol 139-141 ◽  
pp. 1433-1437
Author(s):  
Kai Lin Pan ◽  
Jiao Pin Wang ◽  
Jing Liu ◽  
Guo Tao Ren
Keyword(s):  
High Power ◽  
Heat Sink ◽  
Heat Dissipation ◽  
Light Emitting Diode ◽  
Three Dimensional ◽  
Junction Temperature ◽  
Light Emitting ◽  
Die Attach ◽  
Dissipation Model ◽  
Key Issues

Heat dissipation and cost are the key issues for light-emitting diode (LED) packaging. In this paper, based on the thermal resistance network model of LED packaging, three-dimensional heat dissipation model of high power multi-chip LED packaging is developed and analyzed with the application of finite element method. Temperature distributions of the current multi-chip LED packaging model are investigated systematically under the different materials of the chip substrate, die attach, and/or different structures of the heat sink and fin. The results show that the junction temperature can be decreased effectively by increasing the height of the heat sink, the width of the fin, and the thermal conductivity of the chip substrate and die attach materials. The lower cost and higher reliability for LED source can be obtained through reasonable selection of materials and structure parameters of the LED lighting system.

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