Effect of Thickness of Single-Phase Antimony and Tellurium Thin Films on Their Thermal Conductivities

A novel two-step metalorganic chemical vapor deposition process was used in this study to prepare Sr1−xBaxNb2O6 (SBN) thin films. Two thin layers of single-phase SrNb2O6 and BaNb2O6 were deposited alternately on a silicon substrate, and the solid solution of SBN was obtained by high-temperature annealing. The stoichiometry control of the SrNb2O6 and the BaNb2O6 thin films was achieved through deposition process control, according to the evaporation characteristics of double metal alkoxide. The evaporation behavior of double metal alkoxide precursors SrNb2(1-OC4H9)12 and BaNb2(1-OC4H9)12 was studied, and the results were compared with the evaporation of single alkoxide Nb(1-OC4H9)5.

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Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.633.378 ◽

2014 ◽

Vol 633 ◽

pp. 378-381

Author(s):

Bei Li ◽

X.B. Liu ◽

M. Chen ◽

X.A. Mei

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Layered Structure ◽

Remanent Polarization ◽

Single Phase ◽

Ferroelectric Properties ◽

Pulsed Laser ◽

Laser Deposition ◽

Deposition Technique ◽

Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

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Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.123-125.375 ◽

2010 ◽

Vol 123-125 ◽

pp. 375-378 ◽

Cited By ~ 3

Author(s):

Ram Prakash ◽

Shalendra Kumar ◽

Chan Gyu Lee ◽

S.K. Sharma ◽

Marcelo Knobel ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Single Phase ◽

Pulsed Laser ◽

Laser Deposition ◽

Fe Doping ◽

Full Width ◽

Deposition Technique ◽

X Ray Diffraction ◽

X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

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Solution Flow System for Hydrothermal-Electrochemical Synthesis: New Opportunities for Multilayered Oxide Films

MRS Proceedings ◽

10.1557/proc-517-639 ◽

1998 ◽

Vol 517 ◽

Cited By ~ 2

Author(s):

W. Suchanek ◽

T. Watanabe ◽

B. Sakurai ◽

M. Yoshimura

Keyword(s):

Thin Films ◽

Flow Rate ◽

Electrochemical Synthesis ◽

Single Phase ◽

Flow System ◽

Single Layer ◽

Double Layers ◽

Solution Flow ◽

Additional Control ◽

Multilayered Thin Films

AbstractA solution flow system for hydrothermal-electrochemical synthesis has been constructed in our laboratory. This equipment can operate at 20°-200°C, under the pressure of 1-50 atm., at flow rate of 1-50 cm3/min. Applicability of the flow system for low-temperature, hydrothermalelectrochemical synthesis of single-layer and multilayered thin films has been demonstrated using the BaTiO3-SrTiO3 system as an example. Single phase thin films as well as double layers have been deposited at 150°C, current density of 1 mA/cm2, and flow rates of 1-50 cm3/min. The flow rate is an important parameter allowing additional control of the films' morphology by affecting the growth rate. The multilayers can be prepared in only one experiment by simply changing the flowing solution. Processing using the solution flow cell may serve as an inexpensive and environmentally friendly way of fabricating any multilayered thin films, including magneto-optic films.

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Influence of Excess Potassium on Structural and Ferroelectric Properties of Lead-Free Bi0.5K0.5TiO3 Thin Films

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2021.19117 ◽

2021 ◽

Vol 21 (4) ◽

pp. 2681-2686

Author(s):

Nguyen Ngoc Minh ◽

Bui Van Dan ◽

Nguyen Duc Minh ◽

Guus Rijnders ◽

Ngo Duc Quan

Keyword(s):

Thin Films ◽

Chemical Solution Deposition ◽

Single Phase ◽

Ferroelectric Properties ◽

Lead Free ◽

Chemical Solution ◽

Ferroelectric Films ◽

Solution Deposition ◽

Si Substrates ◽

Excess Amount

Lead-free Bi0.5K0.5TiO3 (BKT) ferroelectric films were synthesized on Pt/Ti/SiO2/Si substrates via the chemical solution deposition. The influence of the excess potassium on the microstructures and the ferroelectric properties of the films was investigated in detail. The results showed that the BKT films have reached the well-crystallized state in the single-phase perovskite structure with 20 mol.% excess amount of potassium. For this film, the ferroelectric properties of the films were significantly enhanced. The remnant polarization (Pr) and maximum polarization (Pm) reached the highest values of 9.4 μC/cm2 and 32.2 μC/cm2, respectively, under the electric field of 400 kV/cm.

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