Electrochemical Deposition of the Single Phase TlxCu3 – xSe2 Thin Films

A novel two-step metalorganic chemical vapor deposition process was used in this study to prepare Sr1−xBaxNb2O6 (SBN) thin films. Two thin layers of single-phase SrNb2O6 and BaNb2O6 were deposited alternately on a silicon substrate, and the solid solution of SBN was obtained by high-temperature annealing. The stoichiometry control of the SrNb2O6 and the BaNb2O6 thin films was achieved through deposition process control, according to the evaporation characteristics of double metal alkoxide. The evaporation behavior of double metal alkoxide precursors SrNb2(1-OC4H9)12 and BaNb2(1-OC4H9)12 was studied, and the results were compared with the evaporation of single alkoxide Nb(1-OC4H9)5.

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Electrochemical deposition and characterization of SnS thin films

Journal of Solid State Electrochemistry ◽

10.1007/s10008-010-1136-3 ◽

2010 ◽

Vol 15 (4) ◽

pp. 683-688 ◽

Cited By ~ 20

Author(s):

Medhat M. Kamel ◽

Mervat Mohamed Ibrahim

Keyword(s):

Thin Films ◽

Electrochemical Deposition ◽

Sns Thin Films

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Oscillatory Behavior in Electrochemical Deposition Reaction of Polycrystalline Silicon Thin Films through Reduction of Silicon Tetrachloride in a Molten Salt Electrolyte

Chemistry Letters ◽

10.1246/cl.1996.569 ◽

1996 ◽

Vol 25 (7) ◽

pp. 569-570 ◽

Cited By ~ 10

Author(s):

Toshihiko Matsuda ◽

Shinsuke Nakamura ◽

Ken-ichiro Ide ◽

Kazuiku Nyudo ◽

Shinji Yae ◽

...

Keyword(s):

Thin Films ◽

Molten Salt ◽

Electrochemical Deposition ◽

Polycrystalline Silicon ◽

Oscillatory Behavior ◽

Silicon Tetrachloride ◽

Silicon Thin Films ◽

Molten Salt Electrolyte

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Electrochemical deposition and microstructural characterization of AlCrFeMnNi and AlCrCuFeMnNi high entropy alloy thin films

Applied Surface Science ◽

10.1016/j.apsusc.2015.07.142 ◽

2015 ◽

Vol 358 ◽

pp. 533-539 ◽

Cited By ~ 29

Author(s):

V. Soare ◽

M. Burada ◽

I. Constantin ◽

D. Mitrică ◽

V. Bădiliţă ◽

...

Keyword(s):

Thin Films ◽

Electrochemical Deposition ◽

Microstructural Characterization ◽

High Entropy Alloy ◽

High Entropy

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Ferroelectric Properties and Microstructures of Bi4-xDyxTi3O12 Thin Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.633.378 ◽

2014 ◽

Vol 633 ◽

pp. 378-381

Author(s):

Bei Li ◽

X.B. Liu ◽

M. Chen ◽

X.A. Mei

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Layered Structure ◽

Remanent Polarization ◽

Single Phase ◽

Ferroelectric Properties ◽

Pulsed Laser ◽

Laser Deposition ◽

Deposition Technique ◽

Si Substrates

Dy-doped Bi4Ti3O12 thin films were fabricated on Pt/Ti/SiO2/Si substrates by pulsed laser deposition technique, and the structures and electrical properties of the films were investigated. XRD results indicated that all of Bi4-xDyxTi3O12 films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains. The remanent polarization ( Pr ) and coercive field (Ec) of the Bi4-xDyxTi3O12 Film with x=0.75 were 25μC/cm2 and 85KV/cm , respectively.

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Effect of Thickness of Single-Phase Antimony and Tellurium Thin Films on Their Thermal Conductivities

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2015.11589 ◽

2015 ◽

Vol 15 (9) ◽

pp. 6729-6733 ◽

Cited By ~ 5

Author(s):

No-Won Park ◽

Sang-In Park ◽

Sang-Kwon Lee

Keyword(s):

Thin Films ◽

Single Phase ◽

Thermal Conductivities

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Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.123-125.375 ◽

2010 ◽

Vol 123-125 ◽

pp. 375-378 ◽

Cited By ~ 3

Author(s):

Ram Prakash ◽

Shalendra Kumar ◽

Chan Gyu Lee ◽

S.K. Sharma ◽

Marcelo Knobel ◽

...

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Single Phase ◽

Pulsed Laser ◽

Laser Deposition ◽

Fe Doping ◽

Full Width ◽

Deposition Technique ◽

X Ray Diffraction ◽

X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

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