Carrier Transport Mechanism in Single Crystalline Organic Semiconductor Thin Film Elucidated by Visualized Carrier Motion

2016 ◽  
Vol 16 (4) ◽  
pp. 3388-3393
Author(s):  
Kohei Matsubara ◽  
Kentaro Abe ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Transport Process ◽  
Carrier Transport ◽  
Second Harmonic ◽  
Potential Drop ◽  
Transport Processes ◽  
Time Resolved ◽  
Single Crystalline ◽  
Injection Process

Time-resolved microscopic second harmonic generation (TRM-SHG) measurement was conducted to evaluate temperature dependence of the anisotropic carrier transport process in 6,13-Bis(triisopropylsilylethynyl) (TIPS) pentacene single crystalline domains for two orthogonal directions. Enhancement of the electric field induced SHG (EFI-SHG) signal at the electrode edge at low temperature suggests the presence of potential drop in the injection process. We directly evaluated temperature dependence of the carrier mobility by taking into account the potential drop, and concluded that the Marcus theory is appropriate to interpret the carrier transport in anisotropic TIPS pentacene thin film. TRM-SHG method is a facile and effective way to directly visualize transport process in anisotropic materials and to evaluate injection and transport processes simultaneously.

Experiment and Theoretical Study on Thermal Transport Process in Nano-Sized Copper Film

2013 ◽  
Vol 756-759 ◽  
pp. 108-111
Author(s):  
Fan Da Zeng ◽  
Ya Ping Han ◽  
Jin Xin Wang ◽  
Shao Ze Wang
Keyword(s):  
Thin Film ◽  
Finite Difference Method ◽  
Thermal Transport ◽  
Transport Process ◽  
Theoretical Study ◽  
Copper Film ◽  
Transport Processes ◽  
Time Resolved ◽  
Copper Thin Film ◽  
Glass Substrates

nanosized copper thin film was prepared on glass substrates by magnetron sputtering. 800 nm pump and 400nm probe technique were used to measure time-resolved reflectivity of copper thin film, and the heat transport processes of copper film were experimentally studied. Thermal transport processes in the copper film were numerically simulated by using Parabolic Two-Step (PTS) model with Finite Difference method. The result of the PTS model can well evaluate the measure date.

Spin-Dependent Transport in Si Thin-Film Transistors

1997 ◽  
Vol 467 ◽  
Author(s):  
G. Kawachi ◽  
C F. O. Graeff ◽  
M. S. Brandt ◽  
M. Stutzmann
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Thin Film Transistors ◽  
Carrier Transport ◽  
Gate Dielectric ◽  
Signal To Noise Ratio ◽  
Nitride Layer ◽  
Transport Processes ◽  
Spin Dependent Transport ◽  
Dependent Transport

ABSTRACTDefects and carrier transport processes in silicon based thin-film transistors (TFTs) are investigated by spin-dependent transport (SDT). The resonance signal arising from less than 106 defects in the hydrogenated amorphous silicon (a-Si:H) TFT is detected with a sufficient signal-to-noise ratio. The leakage current mechanism in a-Si:H under high source-drain fields is identified by SDT as electron hopping via defect states located at the interface between undoped a-Si:H and the passivation silicon nitride layer. At temperatures below 100K, spin-dependent hopping of electrons in conduction band tail states is observed. The change of the dominant transport path from extended states conduction to variable range hopping with decreasing temperature is confirmed. SDT measurements on polycrystalline silicon (poly-Si) TFTs having silicon nitride and silicon dioxide as the gate dielectric films reveal differences in the defect structure in these devices. The overall results demonstrate that SDT is a powerful method to probe paramagnetic defects and carrier transport in TFTs.

Temperature Dependence of Field-Effect Mobility in Organic Thin-Film Transistors: Similarity to Inorganic Transistors

2016 ◽  
Vol 16 (4) ◽  
pp. 3219-3222 ◽  
Author(s):  
Jun Okada ◽  
Takashi Nagase ◽  
Takashi Kobayashi ◽  
Hiroyoshi Naito
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Carrier Transport ◽  
Organic Thin Film Transistors ◽  
Localized States ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Oxide Semiconductors

Carrier transport in solution-processed organic thin-film transistors (OTFTs) based on dioctylben-zothienobenzothiophene (C8-BTBT) has been investigated in a wide temperature range from 296 to 10 K. The field-effect mobility shows thermally activated behavior whose activation energy becomes smaller with decreasing temperature. The temperature dependence of field-effect mobility found in C8-BTBT is similar to that of others materials: organic semiconducting polymers, amorphous oxide semiconductors and hydrogenated amorphous silicon. These results indicate that hopping transport between isoenergetic localized states becomes dominated in a low temperature regime in these materials.

Sign in / Sign up

Export Citation Format

Share Document