Experiment and Theoretical Study on Thermal Transport Process in Nano-Sized Copper Film

2013 ◽  
Vol 756-759 ◽  
pp. 108-111
Author(s):  
Fan Da Zeng ◽  
Ya Ping Han ◽  
Jin Xin Wang ◽  
Shao Ze Wang
Keyword(s):  
Thin Film ◽  
Finite Difference Method ◽  
Thermal Transport ◽  
Transport Process ◽  
Theoretical Study ◽  
Copper Film ◽  
Transport Processes ◽  
Time Resolved ◽  
Copper Thin Film ◽  
Glass Substrates

nanosized copper thin film was prepared on glass substrates by magnetron sputtering. 800 nm pump and 400nm probe technique were used to measure time-resolved reflectivity of copper thin film, and the heat transport processes of copper film were experimentally studied. Thermal transport processes in the copper film were numerically simulated by using Parabolic Two-Step (PTS) model with Finite Difference method. The result of the PTS model can well evaluate the measure date.

Carrier Transport Mechanism in Single Crystalline Organic Semiconductor Thin Film Elucidated by Visualized Carrier Motion

2016 ◽  
Vol 16 (4) ◽  
pp. 3388-3393
Author(s):  
Kohei Matsubara ◽  
Kentaro Abe ◽  
Takaaki Manaka ◽  
Mitsumasa Iwamoto
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Transport Process ◽  
Carrier Transport ◽  
Second Harmonic ◽  
Potential Drop ◽  
Transport Processes ◽  
Time Resolved ◽  
Single Crystalline ◽  
Injection Process

Time-resolved microscopic second harmonic generation (TRM-SHG) measurement was conducted to evaluate temperature dependence of the anisotropic carrier transport process in 6,13-Bis(triisopropylsilylethynyl) (TIPS) pentacene single crystalline domains for two orthogonal directions. Enhancement of the electric field induced SHG (EFI-SHG) signal at the electrode edge at low temperature suggests the presence of potential drop in the injection process. We directly evaluated temperature dependence of the carrier mobility by taking into account the potential drop, and concluded that the Marcus theory is appropriate to interpret the carrier transport in anisotropic TIPS pentacene thin film. TRM-SHG method is a facile and effective way to directly visualize transport process in anisotropic materials and to evaluate injection and transport processes simultaneously.

Two Temperature Model Numerical Simulation and Analysis of Thermal Transport Process in Copper Film

2013 ◽  
Vol 750-752 ◽  
pp. 2271-2274
Author(s):  
Fan Da Zeng ◽  
Ya Ping Han ◽  
Jin Xin Wang ◽  
Shao Ze Wang
Keyword(s):  
Thermal Transport ◽  
Transport Process ◽  
Copper Film ◽  
Coupling Factor ◽  
Beam Power ◽  
Temperature Model ◽  
Laser Beam Power ◽  
Lattice Coupling ◽  
Two Temperature ◽  
Pump Laser Beam

Thermal transport process in copper film was numerically simulated with Two-Temperature Model, in which finite difference method was used, and the result shown the temperature change process in electron-lattice system. Some parameters were changed to carry on further simulation. The affect of film thickness on the electronic relaxation time was analyzed. The affect of pump laser beam power on the electron temperature rise was discussed. The influence of electron-lattice coupling factor G on non-equilibrium thermal process was shown in simulations.

Study of Microhardness and Young's Modulus of Copper Thin Film by Tip-Grit AFM Scratch Technology in Various Environments

2014 ◽  
Vol 626 ◽  
pp. 529-540
Author(s):  
Chao Chang Arthur Chen ◽  
Chun Chieh Chao ◽  
Kuo Wei Huang ◽  
Wei En Fu
Keyword(s):  
Thin Film ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Semiconductor Industry ◽  
Chemical Mechanical Planarization ◽  
Copper Film ◽  
Passivation Layer ◽  
Force Model ◽  
Copper Thin Film ◽  
Loop Control

This paper is devoted to investigate an estimation methodology of micro hardness and Young’s modulus of reacted passivation layer of deposited copper thin film in dry and wet environment based a tip-grit atomic force microscope (TGAFM) scratch on copper thin film of silicon wafer. The TGAFM is a modification or attachment of a nanoor micron grit on the tip apex or cantilever beam of a closed-loop control AFM instrument. In this study, a diameter 800 nm SiO2 grit glued on the apex of the tip of AFM is used for experiment. Tip force model has been developed based on Hertzian model and Tresca criterion for stress-strain relationship from the geometries of scratch groove, depth and width to evaluate about microhardness and Young's modulus of copper thin film in regular air and DI-water. Experimental results show that the microhardness (H) is 1.62GPa and the Young's modulus (E) is 160.52GPa of copper thin film in DI-water environment. These mechanical properties of copper thin film is larger than the H= 1.52GPa and E= 126.04GPa for dry environment. Results of this study can be further explored to the grit force reaction on the passivation layer of copper film of chemical mechanical planarization (CMP) process development for semiconductor industry.

scholarly journals Moisture Effects on Copper Thin Film Adhesion

Materials ◽  
2005 ◽  
Author(s):  
Patrick J. Waters ◽  
Alex A. Volinsky
Keyword(s):  
Thin Film ◽  
Copper Film ◽  
Indentation Test ◽  
Maximum Load ◽  
Copper Thin Film ◽  
Cu Films ◽  
Film Adhesion ◽  
Extra Energy ◽  
Thin Film Adhesion ◽  
Sputter Deposited

The effects of moisture on copper thin film adhesion have been investigated using a modified version of the superlayer indentation test. Copper films up to 100 nm thick were sputter deposited on thermally oxidized silicon wafers. A 1 μm tungsten superlayer with 1 GPa compressive residual stress was sputter deposited on top of Cu films, providing extra energy for interfacial debonding upon indentation. The samples were first indented to a depth just greater than the thickness of the W/Cu bi-layer and then unloaded. Water was introduced to the indent, and a second higher load indent was made in the exact same location as the first one to drive crack propagation in the wet environment. For the indents made to the same maximum load, there was a dramatic increase in blister size in the wet environment compared to the blister size in the dry environment. Copper film adhesion in the presence of water was up to 20 times lower than in the dry environment (0.1 J/m2 vs. 2 J/m2). Chemical reactions at the crack tip along with the surface energy minimization by water are thought to be the causes for the adhesion reduction.

Molecular Dynamics Simulation of Copper Thin Film Growth on β-Ta (002) Substrate

2002 ◽  
Vol 721 ◽  
Author(s):  
Youhong Li ◽  
James B. Adams
Keyword(s):  
Thin Film ◽  
Molecular Dynamics ◽  
Film Growth ◽  
Copper Film ◽  
Film Structure ◽  
Thin Film Growth ◽  
Dynamics Simulation ◽  
Copper Metallization ◽  
Copper Thin Film ◽  
Force Matching

AbstractTantalum can be used both as a diffusion barrier and an adhesion layer for copper metallization for semiconductor devices. Experiments show that β-Ta (200) substrates promote (111) texture growth in copper films. In this study, we first create an embedded atom method (EAM) Cu-Ta potential developed by our force matching method (FMM); then the potential is used for Molecular Dynamics (MD) simulations of initial copper thin film growth on β-Ta substrates. Both Cu/Ta interfacial structures and copper film structure are investigated. The relevance to (111) texturing is discussed.

CVD copper thin film deposition using (α-methylstyrene)Cu(I)(hfac)

2001 ◽  
Vol 11 (PR3) ◽  
pp. Pr3-553-Pr3-560 ◽  
Author(s):  
W. Zhuang ◽  
L. J. Charneski ◽  
D. R. Evans ◽  
S. T. Hsu ◽  
Z. Tang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Copper Thin Film

PREPARATION AND CHARACTERIZATION OF POLYVINYL ALCOHOL THIN FILMS FOR ORGANIC THIN FILM TRANSISTORS AND BIOMEDICAL APPLICATIONS

2018 ◽  
Vol 5 (2) ◽  
pp. 16-18
Author(s):  
Chandar Shekar B ◽  
Ranjit Kumar R ◽  
Dinesh K.P.B ◽  
Sulana Sundar C ◽  
Sunnitha S ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Gravimetric Method ◽  
Dip Coating ◽  
Organic Thin Film Transistors ◽  
Poly Vinyl Alcohol ◽  
Organic Thin Film ◽  
Glass Substrates ◽  
Coating Method

Thin films of poly vinyl alcohol (PVA) were prepared on pre-cleaned glass substrates by Dip Coating Method. FTIR spectrum was used to identify the functional groups present in the prepared films. The vibrational peaks observed at 1260 cm-1 and 851 cm-1 are assigned to C–C stretching and CH rocking of PVA.The characteristic band appearing at 1432 cm-1 is assigned to C–H bend of CH2 of PVA. The thickness of the prepared thin films were measured by using an electronic thickness measuring instrument (Tesatronic-TTD20) and cross checked by gravimetric method. XRD spectra indicated the amorphous nature of the films.Surface morphology of the coated films was studied by scanning electron microscope (SEM). The surface revealed no pits and pin holes on the surface. The observed surface morphology indicated that these films could be used as dielectric layer in organic thin film transistors and as drug delivery system for wound healing.

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